N-Channel JFET
High Frequency Amplifier
2N4416 / 2N4416A / PN4416
FEATURES
••Low Noise
••Low Feedback Capacitance
••Low Output Capacitance
••High Transcond uctanc e
••High Pow e r Gai n
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o ther w ise noted)
Gate- Sour ce or Gate-Dr ain Voltage
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30 V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Stor age Temper at ure R a nge
2N4416/2N44 16A . . . . . . . . . . . . . . . . . . . -65oC to +200 oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5 5oC +150 oC
Oper at ing Temper atur e Ra nge
2N4416/2N44 16A . . . . . . . . . . . . . . . . . . . -65oC to +200 oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55oC to +135oC
Lead Temp e ra tu re (Sold erin g, 10se c). . . . . . . . . . . . . +300oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 0m W
Derate above 25oC
2N4416/2N44 16A . . . . . . . . . . . . . . . . . . . . . . . . 1.7m W/oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 .7mW/oC
NOTE: Str esses above those listed under "Absol ute Maxim um
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indic ated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended per i ods may affect device r eliability.
ORDERING INFORMATION
Part Package Temperature Range
2N4416 Herm etic TO -72 -55oC to +135oC
2N4416A Herm etic TO -72 -55oC to +135oC
PN4416 Plastic T O -92 -55oC to +135oC
X2N4416 Sort ed Chips in Car rier s -55oC to +135oC
LLC
PIN CONFIGUR ATI O N
D
SG
TO-92
TO-72
GD
CS
CJ1
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS007 REV A
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss other wise specif ie d)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
IGSS Gate Reverse Current -0.1 nA VGS = -20V, VDS = 0
-0.1 µAT
A = 150oC
BVGSS Gate-Source Breakdown Voltage 2N4416/PN4416 -30
V
IG = -1µA, VDS = 0
2N4416A -35
VGS(off) Gate-Source Cutoff Voltage 2N4416/PN4416 -6 VDS = 15V, ID = 1nA
2N4416A -2.5 -6
VGS(f) Gate-Source Forward Voltage 1 V IG = 1mA, VDS = 0
IDSS Drain Current at Zero Gate V oltage 5 15 mA
VDS = 15V,
VGS = 0
f = 1kHz
gfs Common-Source Forward Transconductance 4500 7500 µS
gos Common-Source Output Conductance 50 µs
Crss Common-Sourc e Reverse Transfer Capacitance (Note 1) 0.8 pF
f = 1M Hz
Ciss Common-Source Input Capacitance (Note 1) 4 pF
Coss Common-Source Input Capacitance (Note 1) 2
ELECTRICA L CHARACTERI STIC S (Continued) (TA = 2 5oC unless otherwise specif ied)
SYMBOL PARAMETER 100MHz 400MHz UNITS TEST CONDITIONS
MIN MAX MIN MAX
giss Common-Source Input Conductance 100 1000
µSV
DS = 15V, VGS = 0 (Note 1 )
biss Common-Source Input Susceptance 2500 10,000
goss Common-Source Output
Conductance 75 100
boss Common-Source Output Susceptance 1000 4000
gfs Common-Source Forward
Transconductance 4000
Gps Common-Source Power Gain 18 10 dB VDS = 15V, ID = 5mA (Note 1)
NF Noise Figure (Note 1) 2 4 VDS = 15V, ID = 5mA, RG = 1kΩ
NOTE 1: For design reference only, not 100% tested.
2N4416 / 2N4416A / PN4416
LLC
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS007 REV A
