BFG590 - NXP SEMICONDUCTORS

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NXP Semiconductors

BFG590; BFG590/X

NPN 5 GHz wideband transistors

Rev. 04 — 12 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures excellent reliability.

APPLICATIONS

•MATV/CATV amplifiers and RF communications

subscriber equipment in the GHz range

•Ideally suitable for use in class-A, (A)B and C amplifiers

with either pulsed or continuous drive.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT143B plastic package.

MARKING

TYPE NUMBER CODE

BFG590 %MH

BFG590/X %MN

PINNING

PIN DESCRIPTION

BFG590 BFG590/X

1 collector collector

2 base emitter

3 emitter base

4 emitter emitter

Fig.1 Simplified outline SOT143B.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCEO collector-emitter voltage open base −−15 V

ICcollector current (DC) −−200 mA

Ptot total power dissipation Ts≤60 °C−−400 mW

hFE DC current gain IC= 35 mA; VCE =8V 5090280

re feedback capacitance IC= 0; VCE =8V; f=1MHz −0.7 −pF

fTtransition frequency IC= 80 mA; VCE =4V; f=1GHz −5−GHz

GUM maximum unilateral power gain IC= 80 mA; VCE =4V;

f = 900 MHz; Tamb =25°C−13 −dB

|S21|2insertion power gain IC= 80 mA; VCE =4V;

f = 900 MHz; Tamb =25°C−11 −dB

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −15 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) −200 mA

Ptot total power dissipation Ts≤60 °C; see Fig.2; note 1 −400 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

600

200

400

MBG249

150

Ptot

(mW)

Ts(oC)

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤60 °C; note 1 290 K/W

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V

(BR)CEO collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V

(BR)EBO emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V

CBO collector-base leakage current VCB =10V; I

E=0 −−100 nA

hFE DC current gain IC= 70 mA; VCE = 8 V; see Fig.3 60 120 250

fTtransition frequency IC= 80 mA; VCE =4V;

f = 1 GHz; see Fig.5 −5−GHz

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz;

see Fig.4 −0.7 −pF

GUM maximum unilateral power gain;

note 1 IC= 80 mA; VCE =4V;

f = 900 MHz; Tamb =25°C−13 −dB

IC= 80 mA; VCE = 4 V ; f = 2 GHz;

Tamb =25°C−7.5 −dB

|S21|2insertion power gain IC= 80 mA; VCE =4V;

f = 900 MHz; Tamb =25°C−11 −dB

GUM 10 S21 2

11 2

–()1S

22 2

–()

-------------------------------------------------------------- dB.log=

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

VCE =8V.

Fig.3 DC current gain as a function of collector

current; typical values.

handbook, halfpage

250

100

150

200

MRA749

10−210−111010

IC (mA)

IC= 0; f = 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

1.2

0.8

0.4

0210

MLC057

468

V (V)

Cre

(pF)

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE = 4 V; f = 1 GHz.

handbook, halfpage

MLC058

102

I (mA)

(GHz)

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

f = 900 MHz; VCE =4V.

Fig.6 Gain as a function of collector current;

typical values.

handbook, halfpage

0100

MLC059

20 40 60 80

gain

(dB)

I (mA)

GUM

Gmax

f = 2 GHz; VCE =4V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

0100

MLC060

20 40 60 80

gain

(dB)

I (mA)

GUM

Gmax

IC= 20 mA; VCE =4V.

Fig.8 Gain as a function of frequency;

typical values.

handbook, halfpage

010

MLC061

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Fig.9 Gain as a function of frequency;

typical values.

IC= 80 mA; VCE =4V.

handbook, halfpage

010

MLC062

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

IC= 80 mA; VCE = 4 V; Zo=50Ω.

Fig.10 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

MGC882

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

IC= 80 mA; VCE =4V.

Fig.11 Common emitter forward transmission coefficient (S21); typical values.

handbook, full pagewidth

MGC805

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz

3 GHz

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

IC= 80 mA; VCE =4V.

Fig.12 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

MGC803

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

IC= 80 mA; VCE =4V;Z

o=50Ω.

Fig.13 Common emitter output reflection coefficient (S22); typical values.

handbook, full pagewidth

MGC804

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

Rev. 04 - 12 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistors BFG590; BFG590/X

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.45

0.15 0.55

0.45

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143B 97-02-28

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT143B

vMA

detail X

Rev. 04 - 12 November 2007

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NXP Semiconductors BFG590; BFG590/X

NPN 5 GHz wideband transistors

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

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General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

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authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

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subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

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Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 04 - 12 November 2007

10 of 11

NXP Semiconductors BFG590; BFG590/X

NPN 5 GHz wideband transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 November 2007

Document identifier: BFG590_X_N_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG590_X_N_4 20071112 Product data sheet - BFG590_X_3

Modiﬁcations: •Fig. 1 and 2 on page 2; Figure note changed

BFG590_X_3

(9397 750 04346) 19981002 Product speciﬁcation - BFG590XR_2

BFG590XR_2 19950919 Product speciﬁcation - BFG590XR_1

BFG590XR_1 19921101 Preliminary speciﬁcation - -