FDS4141 P-Channel PowerTrench(R) MOSFET -40V, -10.8A, 13.0m Features General Description Max rDS(on) = 13.0m at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Max rDS(on) = 19.0m at VGS = -4.5V, ID = -8.4A High performance trench technology for extremely low rDS(on) RoHS Compliant Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D D G SO-8 S S Pin 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings -40 Units V Gate to Source Voltage 20 V Drain Current -Continuous -10.8 -Pulsed -36 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 294 Power Dissipation TA = 25C (Note 1a) 5 Power Dissipation TA = 25C (Note 1b) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDS4141 (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C Device FDS4141 Package SO-8 1 Reel Size 13'' Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET November 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient -40 ID = -250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -32V, IGSS Gate to Source Leakage Current VGS = 20V, VDS = 0V V -33 mV/C -1 A 100 nA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -1.0 -1.6 5.3 mV/C VGS = -10V, ID = -10.5A 11.0 13.0 VGS = -4.5V, ID = -8.4A 15.2 19.0 VGS = -10V, ID = -10.5A, TJ= 125C 16.8 19.9 VDD = -5V, ID = -10.5A 37 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 2005 2670 pF 355 475 pF 190 285 pF 5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -20V, ID = -10.5A, VGS = -10V, RGEN = 6 VDD = -20V, ID = -10.5A 10 20 ns 5 10 ns 42 68 ns 12 22 ns 35 49 nC 19 27 nC 6 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -10.5A (Note 2) -0.8 -1.3 VGS = 0V, IS = -2.1A (Note 2) -0.7 -1.2 26 42 ns 14 26 nC IF = -10.5A, di/dt = 100A/s V NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25C, L = 3mH, IAS = -14A, VDD = -40V, VGS = -10V. (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 2 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 36 -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = -4V 27 VGS = - 4.5V VGS = -10V 18 VGS = -3V 9 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 0 1 2 3 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3.5 VGS = -3V 3.0 2.5 VGS = -3.5V 2.0 VGS = -4V 1.5 VGS = - 4.5V 1.0 VGS = -10V 0.5 0 9 Figure 1. On-Region Characteristics 1.6 ID = -10.5A rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 36 50 ID = -10.5A VGS = -10V 100 125 150 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 40 30 TJ = 125oC 20 10 TJ = 25oC 0 2 TJ, JUNCTION TEMPERATURE ( C) o 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On- Resistance vs Junction Temperature 100 36 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 27 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 27 VDS = -5V TJ = 150oC 18 TJ = 25oC 9 TJ = -55oC 0 18 -ID, DRAIN CURRENT(A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C VGS = 0V 3 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 5000 ID = -10.5A Ciss 8 VDD = -20V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = -15V VDD = -25V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 100 60 0.1 0 0 5 10 15 20 25 30 35 40 1 12 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT(A) 40 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 10 TJ = 25oC TJ = 125oC 9 VGS = -10V 6 VGS = -4.5V 3 o RJA = 50 C/W 1 0.01 0.1 1 10 100 0 25 500 50 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s RJA = 125oC/W 10s DC TA = 25oC 0.01 0.01 0.1 1 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 4 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.001 o RJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 5 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted Preliminary Datasheet The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition tm Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 (c)2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 6 www.fairchildsemi.com FDS4141 P-Channel PowerTrench(R) MOSFET TRADEMARKS