2SB1302T-TD-E - ON Semiconductor

2SB1302

No.2555-1/4

Applications

•DC-DC converters, motor drivers, relay drivers, lamp drivers.

Features

•Adoption of FBET, MBIT processes.

•Low collector-to-emitter saturation voltage.

•Large current capacity.

•Fast switching speed.

•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --25 V

Collector-to-Emitter Voltage VCEO --20 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--5 A

Collector Current (Pulse) ICP --8 A

Collector Dissipation PC

Mounted on a ceramic board (250mm

✕0.8mm)

1.3 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Marking : BJ

www.semiconductor-sanyo.com/network

Ordering number : EN2555B

31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

SANYO Semiconductors

DATA SHEET

2SB1302 PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

2SB1302

No.2555-2/4

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--20V, IE=0A --500 nA

Emitter Cutoff Current IEBO VEB=--4V, IC=0A --500 nA

DC Current Gain hFE1V

CE=--2V, IC=--500mA 100* 400*

hFE2V

CE=--2V, IC=--4A 60

Gain-Bandwidth Product fTVCE=--5V, IC=--200mA 320 MHz

Output Capacitance Cob VCB=--10V, f=1MHz 60 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--3A, IB=--60mA --250 --500 mV

Base-to-Emitterr Saturation Voltage VBE(sat) IC=--3A, IB=--60mA --1.0 --1.3 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --25 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--20 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --5 V

Turn-ON Time ton See specified Test Circuit. 40 ns

Storage T ime tstg See specified Test Circuit. 200 ns

Fall T ime tfSee specified Test Circuit. 10 ns

*: The 2SB1302 is classified by 500mA hFE as follows:

Rank R S T

hFE 100 to 200 140 to 280 200 to 400

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7007B-004

VRRB

VCC= --10VVBE=5V

50Ω

INPUT

OUTPUT

100μF470μF

PW=20μsIB1

D.C.≤1% IB2

IC=10IB1= --10IB2= --2A

2SB1302

No.2555-3/4

IC -- VCE

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

VCE(sat) -- IC

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

hFE -- IC

Collector Current, IC -- A

DC Current Gain, hFE

fT -- IC

Collector Current, IC -- A

Gain-Brandwidth Product, fT -- MHz

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

VBE(sat) -- IC

Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

ITR09569

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

--4

--5

--3

--2

--1

--6

VCE= --2V VCE= --2V

ITR09567

0 --0.4--0.2 --0.8--0.6 --1.0

--1

--2

--3

--4

--5

IB=0mA

--40mA

--30mA

--20mA

10mA

ITR09568

ITR09570

--0.1--0.01 323 5 --1.0 --10

57777235 2

100

1000

Ta=75°C

25°

--25°C

50mA

0--2--1 --4--3 --5

--1

--2

--3

--4

--5

IB=0mA

40mA

--30mA

25mA

15mA

--35mA

20mA

10mA

5mA

Ta=75

°C

25°

--25

From top

--100mA

--90mA

--80mA

--70mA

--60mA

ITR09573

5--0.1 2

--0.01 23357777

--1.0 23 5 --10

--10

--100

--1000

ITR09574

55 --1.0 2

--0.1--0.01 2323 57777 --10

--1.0

--10

IC / IB=50

0.1 23

0.01 23 357577

1.0 7

100

1000

ITR09571

10 23

1.0 233575

100

ITR09572

VCE= --5V f=1MHz

Ta= --25°C

°C

IC / IB=50

Ta= --25°C

°C

2SB1302

No.2555-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

This catalog provides information as of March, 2010. Specifications and information herein are subject

to change without notice.

PC -- Ta

A S O

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Ambient Temperature, Ta -- °C

Collector Dissipation, PC -- W

ITR09575

10ms

1ms

--1.0

352 353

--10

--1.0

--10

--0.1

DC operation

100ms

Ta=25°C

Single pulse

0 20 40 60 80 100 120 140 160

0.2

0.4

0.6

0.8

1.2

1.4

1.8

1.0

ITR09576

Mounted on a ceramic board (250mm

✕0.8mm)

ICP= --8A

IC= --5A

Mounted on a ceramic board (250mm

✕0.8mm)