Data Sheet CMPFJ174 1 CMPFJ175 Sy |g CMPFJ176 CMPFJ177 Semiconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA SURFACE MOUNT Phone (516) 435-1110 FAX (516) 435-1824 SILICON P-CHANNEL JFET Manufacturers of World Class Discrete Semiconductors SOT-23 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPFJ174 Series types are epoxy molded P-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for low level amplifier applications. Marking codes are 6V, 6W, 6X and 6Y respectively. MAXIMUM RATINGS (Ta=25C) SYMBOL UNITS Gate-Drain Voltage VGeD 30 Vv Gate-Source Voltage VGs 30 Vv Gate Current Is 50 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature Ty.T stg -65 to +150 C Thermal Resistance QUA 357 C/W ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS Iisss Vgs=20V 1.0 1.0 1.0 1.0 nA Ipss Vps=15V 20 100 7.0 60 2.0 25 4.5 20 mA BVess Ig=1.0uA 30 30 30 30 V VGS(off) Vps=15V, Ip=10nA 5.0 10 3.0 6.0 1.0 4.0 0.8 2.5 V "DS(ON) Vps=0.1V 85 125 250 300 Q (SEE REVERSE SIDE) R1 SOT-23 CASE - MECHANICAL OUTLINE .110(2.80) .118(3.00) .003(0.08 .083(2.10) .006(0.15) 041(1.05) NOMINAL ~ NOMINAL a .106(2.70) 047(1.19) MAXIMUM .063(1.60) 4 .005(0.13) 3 MAXIMUM L .014(0.35) aa .050(1.28) , 020(0.50) All Dimensions in Inches (mm) LEAD CODE: 1) DRAIN 2) SOURCE 3) GATE MARKING CODE: CMPFJ174 - 6V CMPFJ175 - 6W CMPFJ176 - 6X CMPFJ177 - 6Y Central Semiconductor Corp.