SIEMENS BCR 191 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=22kQ, Re=22kQ) VPS05161 Type Marking |Ordering Code | Pin Configuration Package BCR 191 WOs Q62702-C2264 |1=B |2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Voeo 50 Vv Collector-base voltage Vcpo 50 Emitter-base voltage Vego 10 Input on Voltage Viton) 30 DC collector current Io 100 mA Total power dissipation, Ts = 102C Prot 200 mW Junction temperature Tj 150 C Storage temperature Tetg $65 ... + 150 Thermal Resistance Junction ambient 1) Rina $350 KAW Junction - soldering point Airs $ 240 1) Package mounted on peb 40mm x 40mm x 1.5mm / 6om? Cu Semiconductor Group 723 11.96 SIEMENS BCR 191 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. _|typ. |max. DC Characteristics Coltector-emitter breakdown voltage ViBRICEO Vv Ig = 100 pA, fp =0 50 - - Collector-base breakdown voltage ViBR}CBO ig = 10 pA, Ip =0 50 - . Collector cutoff current lepo nA Vop = 40V, =0 - - 100 Emitter cutoff current lEBo HA Veg = 10V, Io =0 - - 350 DC current gain hee - lg =5 MA, Vop =5V 50 - - Collector-emitter saturation voltage 1) | Vcegat v Ig = 10 mA, fg = 0.5 mA - - 0.3 Input off voltage Vit Io = 100 PA, Vog =5V 0.8 - 1.5 Input on Voltage Vicon) Io = 2 MA, Vog = 0.3 V 1 - 2.5 Input resistor Ay 15 22 29 kQ Resistor ratio Aiy/R 0.9 1 11 - AC Characteristics Transition frequency fr MHz Ig = 10 MA, Vog = 5 V, f= 100 MHz - 200 : Collector-base capacitance Cob pF Veg = 10 V, f= 1 MHz - 3 - 1) Pulse test: t< 300us; D < 2% Semiconductor Group 724 11.96 SIEMENS BCR 191 DC Current Gain fee = f (Ic) Voge = 5V (common emitter configuration) 105 FE t 102 101 10 10 10 10 mA Input on Voltage Vion) = (/c) Vce = 0.3V (common emitter configuration) a Vion Semiconductor Group Collector-Emitter Saturation Voltage Voesat = Alc), Are = 20 102 101 10 0.0 0.1 0.2 0.3 04 65 06 0.7 08 Vi 1.0 csat Input off voltage Viotr = Ac) Voce = 5V (common emitter configuration) 00 O05 10 15 20 Vv 30 Yan 725 11.96 SIEMENS BCR 191 Total power dissipation Pi = f(T": Ts) * Package mounted on epoxy 300 a E tc NN \ ; \\ 50 \ 0 0 20 40 60 80 100 120 C 150 hls Permissible Pulse Load Finis = Kf) ow COCO 1 a att Pass. 492 Te Hi TTT Ata Semiconductor Group Permissible Pulse Load Piotmax / Ptotoc = Kip) Cc Ht iH TCU CU CTCL TA I CCL ue mT MN il . Sa Hin NIT on aK 726 11.96