Ver. BEDPublication date: February 2014 1
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G02 in SSMini3 type package
Features
High transition frequency fT
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C5
Packaging
DSC9G02×0L
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3 V
Collector current IC15 mA
Collector power dissipation PC125 mW
Junction temperature Tj150 °C
Operating ambient temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Base-emitter voltage VBE VCE = 6 V, IC = 1 mA 0.72 V
Forward current transfer ratio *1hFE VCE = 6 V, IC = 1 mA 65 260
Transition frequency fTVCE = 6 V, IC = 1 mA 450 650 MHz
Reverse transfer capacitance
(Common emitter) Cre VCE = 6 V, IC = 1 mA , f = 10.7 MHz 0.6 pF
Power gain PG VCE = 6 V, IC = 1 mA , f = 100 MHz 24 dB
Noise figure NF VCE = 6 V, IC = 1 mA , f = 100 MHz 3.3 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Rank classification
Code C D 0
Rank C D No-rank
hFE 65 to 160 100 to 260 65 to 260
Marking Symbol C5C C5D C5
Product of no-rank is not classified and have no marking symbol for rank.
Unit: mm
1: Base
2: Emitter
3: Collector
Panasonic SSMini3-F3-B
JEITA SC-89
Code SOT-490
Ver. BED
DSC9G02
2
PC Ta IC VCE hFE IC
VCE(sat) IC IC VBE Cob VCB
0
0 200 160 40 120 80
25
125
100
50
75
150
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
DSC9G02_PC-Ta
0
0 12 2 10 4 8 6
20
16
12
8
4
Collector current IC (mA)
Collector-emitter voltage VCE (V)
DSC9G02_IC-VCE
Ta = 25°C
IB = 120 µA
30 µA
40 µA
50 µA
60 µA
70 µA
80 µA
90 µA
110 µA
100 µA
0
10−1
200
160
120
80
40
1 10 102
Forward current transfer ratio hFE
Collector current IC (mA)
DSC9G02_hFE-IC
25°C
−40°C
Ta = 85°C
VCE = 6 V
10−2
10−1
10−1
1
10
1 10 102
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
DSC9G02_VCEsat-IC
25°C
−40°C
Ta = 85°C
IC / IB = 10
0
0 1.2 0.2 1.0 0.4 0.8 0.6
20
15
10
5
Collector current IC (mA)
Base-emitter voltage VBE (V)
DSC9G02_IC-VBE
−40°C
25°C
Ta = 85°C
VCE = 6 V
0
1
2.0
1.6
1.2
0.8
0.4
10 100
Collector-base voltage VCB (V)
DSC9G02_Cob-VCB
Collector output capacitance
(Common base, input open circuited) Cob
(pF)
IE = 0
f = 1 MHz
Ta = 25°C
fT IC
0
10−1
1
600
1
200
800
400
1 10 102
Transition frequency fT (MHz)
Collector current IC (mA)
DSC9G02_fT-IC
VCE = 6 V
Ta = 25°C
Ver. BED
DSC9G02
3
SSMini3-F3-B Unit: mm
Land Pattern (Reference) (Unit: mm)
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