VSMB10940X01
www.vishay.com Vishay Semiconductors
Rev. 1.3, 11-May-15 1Document Number: 84216
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB10940X01 is an infrared, 940 nm side looking emitting
diode in GaAlAs multi quantum well (MQW) technology with
high radiant power and high speed, molded in clear,
untinted plastic package (with lens) for surface mounting
(SMD).
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half intensity: ϕ = ± 75°
• Low forward voltage
• Package matches with detector VEMD10940FX01
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IR touch panel
• High power emitter for low space applications
• High performance transmissive or reflective sensors
• Automotive applications
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr), 20 mA ϕ (deg) λp (nm) tr (ns)
VSMB10940X01 1 ± 75 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB10940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF65 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 130 mA
Surge forward current tp = 100 μs IFSM 500 mA
Power dissipation PV104 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature according to fig. 9, J-STD-020 Tsd 260 °C
Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 450 K/W
VSMB10940X01
www.vishay.com Vishay Semiconductors
Rev. 1.3, 11-May-15 2Document Number: 84216
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
0
20
40
60
80
100
120
0 102030405060708090100
R
thJA
= 450 K/W
Tamb - Ambient Temperature (°C)
IF - Forward Current (mA)
0
10
30
40
50
60
70
0 20 40 60 80 100
20
RthJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 20 mA, tp = 20 ms VF1.11.241.5 V
IF = 65 mA, tp = 20 ms VF1.35 V
IF = 500 mA, tp = 100 μs VF1.8 V
Temperature coefficient of VFIF = 1 mA TKVF -1.5 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz,
E = 0 mW/cm2CJ21 pF
Radiant intensity
IF = 20 mA, tp = 20 ms Ie0.5 1.0 1.5 mW/sr
IF = 65 mA, tp = 20 ms Ie3.2 mW/sr
IF = 500 mA, tp = 100 μs Ie20 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe35mW
Temperature coefficient of radiant power IF = 100 mA TKφe-0.47 %/K
Angle of half intensity - horizontal ϕh± 77.5 deg
Angle of half intensity - vertical ϕv± 72.5 deg
Peak wavelength IF = 30 mA λp940 nm
Spectral bandwidth IF = 30 mA Δλ 25 nm
Temperature coefficient of λpIF = 30 mA TKλp0.3 nm
Rise time IF = 100 mA, 20 % to 80 % tr15 ns
Fall time IF = 100 mA, 20 % to 80 % tf15 ns
VSMB10940X01
www.vishay.com Vishay Semiconductors
Rev. 1.3, 11-May-15 3Document Number: 84216
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0
IF - Forward Current (mA)
VF - Forward Voltage (V)
tp = 100 μs
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
0.01
0.1
1
10
100
1 10 100 1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 100 μs
60
80
100
120
160
- 60 - 40 60 100
Tamb - Ambient Temperature (°C)
Ie, rel - Relative Radiant Intensity (%)
I
F
= 100 mA
140
40200- 20 80
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
horizontal
vertical
VSMB10940X01
www.vishay.com Vishay Semiconductors
Rev. 1.3, 11-May-15 4Document Number: 84216
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFILE
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
22701
Recommended Solder Pad Footprint
VSMB10940X01
www.vishay.com Vishay Semiconductors
Rev. 1.3, 11-May-15 5Document Number: 84216
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters
REEL DIMENSIONS in millimeters
22667
22668
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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