V
RRM
= 100 V - 600 V
I
F
= 85 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol FR85B(R)02 FR85D(R)02 FR85G(R)02 Unit
Re
etitive
eak reverse
• Types from 100 V to 600 V V
RRM
2. Reverse polarity (R): Stud is anode.
FR85B02 thru FR85JR02
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
FR85J(R)02
voltage
RRM
RMS reverse voltage V
RMS
70 140 280 V
DC blocking voltage V
DC
100 200 400 V
Continuous forward current I
F
85 85 85 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol FR85B(R)02 FR85D(R)02 FR85G(R)02 Unit
Diode forward voltage 1.3 1.3 1.3
25 25 25 μA
20 20 20 mA
Recovery Time
Maximum reverse recovery
time T
RR
200 200 200 nS
Reverse current I
R
V
F
V
R
= 100 V, T
j
= 25 °C
I
F
= 85 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
1369 1369
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
250
A1369
-55 to 150
-55 to 150
FR85J(R)02
1.3
420
600
85
1369
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
R
= 100 V, T
j
= 125 °
V
25
20
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1