APTGT75X120E3G - Microsemi Corp.

APTG

T

75

X

120

E

3

APTGT75X120E3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

1

-

3

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

13

14

1719 15

8 9 1110 12

21

20

5 63 41 2 7

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C 100

I

C

Continuous Collector Current T

C

= 80°C 75

I

CM

Pulsed Collector Current T

C

= 25°C 175

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 350 W

RBSOA Reverse Bias Operating Area T

j

= 125°C 150A@1100V

VCES = 1200V

IC = 75A @ Tc = 80°C

Application

• AC Motor control

Features

• Trench + Field Stop IGBT

®

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Very low stray inductance

• High level of integration

Benefits

• Stable temperature behavior

• Very rugged

• Solderable terminals for easy PCB mounting

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

• Low profile

3 Phase bridge

Trench IGBT

®

Power Module

APTG

T

75

X

120

E

3

APTGT75X120E3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

2

-

3

Electrical Characteristics All ratings @ T

j

= 25°C unless otherwise specified

Symbol

Characteristic Test Conditions Min Typ Max Unit

BV

CES

Collector - Emitter Breakdown Voltage V

GE

= 0V, I

C

= 5mA

1200

V

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 5 mA

T

j

= 25°C 1.4 1.7 2.1

V

CE(on)

Collector Emitter on Voltage V

GE

=15V

I

C

= 75A T

j

= 125°C 2.0 V

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 3 mA 5.0 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 500 nA

Dynamic Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 5340

C

oes

Output Capacitance 280

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz 240

pF

T

d(on)

Turn-on Delay Time 260

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 420

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 75A

R

G

= 4.7Ω 70

ns

T

d(on)

Turn-on Delay Time 285

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 520

T

f

Fall Time 90

ns

E

off

Turn off Energy

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 75A

R

G

= 4.7Ω

9.5 mJ

Reverse diode ratings and characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 1.6 2.1

V

F

Diode Forward Voltage I

F

= 75A

V

GE

= 0V T

j

= 125°C 1.6 V

T

j

= 25°C 3

E

r

Reverse Recovery Energy I

F

= 75A

V

R

= 600V

di/dt =825A/µs T

j

= 125°C 6 mJ

T

j

= 25°C 7.6

Q

rr

Reverse Recovery Charge I

F

= 75A

V

R

= 600V

di/dt =825A/µs

T

j

= 125°C 13.7 µC

Thermal and package characteristics

Symbol

Characteristic Min Typ Max Unit

IGBT 0.35

R

thJC

Junction to Case Diode 0.58 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min,

I isol<1mA, 50/60Hz 2500 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

°C

Torque Mounting torque To Heatsink M5 3 4.5 N.m

Wt Package Weight 300 g

APTG

T

75

X

120

E

3

APTGT75X120E3 – Rev 0 July, 2003

APT website – http://www.advancedpower.com

3

-

3

Package outline

PIN 1

PIN 21

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522