IXFK240N15T2 - IXYS - Product.Network

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C 150 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ150 V

VGSS Continuous ± 20 V

VGSM Transient ± 30 V

ID25 TC= 25°C (Chip Capability) 240 A

IL(RMS) External Lead Current Limit 160 A

IDM TC= 25°C, Pulse Width Limited by TJM 600 A

IATC= 25°C 120 A

EAS TC= 25°C2J

PDTC= 25°C 1250 W

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.

FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 150 V

VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V

IGSS VGS = ± 20V, VDS = 0V ± 200 nA

IDSS VDS = VDSS, VGS= 0V 25 μA

TJ = 150°C 3 mA

RDS(on) VGS = 10V, ID = 60A, Note 1 4.1 5.2 mΩ

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFK240N15T2

IXFX240N15T2

VDSS = 150V

ID25 = 240A

RDS(on) ≤≤

≤≤

≤ 5.2mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 140ns

DS100191(09/09)

G = Gate D = Drain

S = Source TAB = Drain

PLUS247 (IXFX)

TO-264 (IXFK)

S

G

D(TAB)

(TAB)

Features

zInternational Standard Packages

zHigh Current Handling Capability

zFast Intrinsic Diode

zAvalanche Rated

zLow RDS(on)

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zSynchronous Recification

zDC-DC Converters

zBattery Chargers

zSwitched-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zAC Motor Drives

zUninterruptible Power Supplies

zHigh Speed Power Switching

Applications

Advance Technical Information

GigaMOSTM TrenchT2

HiperFETTM

Power MOSFET

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK240N15T2

IXFX240N15T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 60A, Note 1 125 210 S

Ciss 32 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 2280 pF

Crss 270 pF

RGi Gate Input Resistance 1.50 Ω

td(on) 48 ns

tr 125 ns

td(off) 77 ns

tf 145 ns

Qg(on) 460 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC

Qgd 130 nC

RthJC 0.12 °C/W

RthCS 0.15 °C/W

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-264 (IXFK) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247TM (IXFX) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 240 A

ISM Repetitive, Pulse Width Limited by TJM 960 A

VSD IF = 100A, VGS = 0V, Note 1 1.2 V

trr 140 ns

QRM 410 nC

IRM 8.2 A

IF = 120A, -di/dt = 100A/μs

VR = 75V, VGS = 0V

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXFK240N15T2

IXFX240N15T2

Fi g . 1. Output Ch ar acter i sti c s

@ T

J

= 25ºC

0

40

80

120

160

200

240

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5V

6V

5.5V

Fig. 3. Output Characteristics

@ T

J

= 150ºC

0

40

80

120

160

200

240

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5

V

6

V

4

V

Fig. 4. R

DS(on)

Normalized to I

D

= 120A Valu e

vs. Ju n cti on Temperatu r e

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 240A

I

D

= 120A

Fig. 5. R

DS(on)

Normalized to I

D

= 120A Valu e

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 40 80 120 160 200 240 280 320 360

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fi g . 6. D r ai n C u rren t vs. C ase Temper atu re

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fi g . 2. Exten d ed Ou tp ut Ch ar acter i sti cs

@ T

J

= 25ºC

0

50

100

150

200

250

300

350

400

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

5.5V

6V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK240N15T2

IXFX240N15T2

IXYS REF:F_240N15T2(8V)9-11-09

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.0 3.5 4.0 4.5 5.0 5.5 6.0

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

- 40ºC

25ºC

Fig. 8. T ransconductance

0

50

100

150

200

250

300

350

400

0 20 40 60 80 100 120 140 160 180 200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

40

80

120

160

200

240

280

320

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 50 100 150 200 250 300 350 400 450 500

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 75V

I

D

= 120A

I

G

= 10mA

Fig. 11. Capacitance

0.1

1.0

10.0

100.0

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - NanoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

1,000.0

1 10 100 1,000

V

DS

- Volts

I

D

- Amperes

100µs

1ms

10ms

R

DS(on)

Limit

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

100ms

External Lead Limit

DC

25µs

IXFK240N15T2

IXFX240N15T2

Fig . 14. R esistive Turn -o n Ri se Time

vs. D r ain C u r r en t

0

40

80

120

160

200

240

280

320

60 80 100 120 140 160 180 200 220 240

I

D

- Amperes

t

r

- Nanoseconds

T

J

= 25ºC

T

J

= 125ºC

R

G

= 1 , V

GS

= 10V

V

DS

= 75V

Fig. 15. Resi st ive Tur n-on Sw i t ch ing Times

vs. Gate Resistance

0

100

200

300

400

500

600

700

12345678910

R

G

- Ohms

t

r

- Nanoseconds

0

30

60

90

120

150

180

210

t

d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 75V

I

D

= 120A

I

D

= 240A

Fi g . 16. R esi st iv e Tu r n -o ff Swi t ch i n g Ti mes

vs. Junction Tem perature

0

100

200

300

400

500

600

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

60

70

80

90

100

110

120

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1, V

GS

= 10V

V

DS

= 75V

I

D

= 120A

I

D

= 240A

Fig. 17. Resi st ive Tur n-off Sw i t ch ing Time s

vs. D r ai n Cu r r en t

0

50

100

150

200

250

300

350

400

60 80 100 120 140 160 180 200 220 240

I

D

- Amperes

t

f

- Nanoseconds

60

70

80

90

100

110

120

130

140

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1, V

GS

= 10V

V

DS

= 75V

T

J

= 25ºC

T

J

= 125ºC

Fig. 13. Resistive Turn -on R ise Time

vs. Ju nctio n Temper a ture

60

100

140

180

220

260

300

340

380

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1 , V

GS

= 10V

V

DS

= 75V

I

D

= 240A

I

D

= 120A

Fig . 18. R esistive Tur n-o ff Switchi ng Times

vs. Gate Resistance

100

200

300

400

500

600

700

12345678910

R

G

- Ohms

t

f

- Nanoseconds

0

100

200

300

400

500

600

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 75V

I

D

= 240A I

D

= 120A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK240N15T2

IXFX240N15T2

IXYS REF:F_240N15T2(8V)9-11-09

Fig. 1 9. Maximum Tr an s i en t Ther mal Impedance

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

F i g . 19. Maxi mium Transient Th er mal I mp ed a n ce

.sadgsfgsf

0.200