FQT13N06TF - Fairchild - Product.Network

May 2001

FQT13N06L

QFETTM

FQT13N06L

60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

Features

• 2.8A, 60V, RDS(on) = 0.11Ω @VGS = 10 V

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT13N06L Units

VDSS Drain-Source Voltage 60 V

IDDrain Current - Continuous (TC = 25°C) 2.8 A

- Continuous (TC = 70°C) 2.24 A

IDM Drain Current - Pulsed (Note 1) 11.2 A

VGSS Gate-Source Voltage ± 20 V

EAS Single Pulsed Avalanche Energy (Note 2) 85 mJ

IAR Avalanche Current (Note 1) 2.8 A

EAR Repetitive Avalanche Energy (Note 1) 0.21 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns

PDPower Dissipation (TC = 25°C) 2.1 W

- Derate above 25°C 0.017 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJA Thermal Resistance, Junction-to-Ambient * -- 60 °C/W

SOT-223

FQT Series

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2001

FQT13N06L

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 12.6mH, IAS = 2.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA60 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA

VDS = 48 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.5 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 1.4 A

VGS = 5 V, I D = 1.4 A --

-- 0.088

0.110 0.11

0.14 Ω

gFS Forward Transconductance VDS = 25 V, ID = 1.4 A -- 4.1 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 270 350 pF

Coss Output Capacitance -- 95 125 pF

Crss Reverse Transfer Capacit ance -- 17 23 pF

Switching Characteristics

td(on) Turn-On Delay T ime VDD = 30 V, ID = 6.8 A,

RG = 25 Ω

-- 8 25 ns

trTurn-On Rise Time -- 90 190 ns

td(off) Turn-Off Del a y Time -- 20 50 ns

tfTurn-Off Fa ll Time -- 40 90 ns

QgTotal Gate Ch arge VDS = 48 V, ID = 13.6 A,

VGS = 5 V

-- 4.8 6.4 nC

Qgs Gate-Source Charge -- 1.6 -- nC

Qgd Gate-Drain Charge -- 2.7 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 2.8 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 13.6 A,

dIF / dt = 100 A/µs

-- 45 -- ns

Qrr Reverse Recovery Charge -- 45 -- nC

FQT13N06L

0246810

VDS = 30V

VDS = 48V

! N ote : I D = 13.6A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

200

400

600

800 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

N o te s :

1 . V GS = 0 V

2. F = 1 MH z

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2

10-1

100

101

150"

! No te s :

1. VGS = 0V

2. 250 #s P ulse Test

25"

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 10203040

100

150

200

250

VGS = 10V

VGS = 5V

! Note : TJ = 25"

RDS(ON) [m$],

Drain-Source On-Resistance

ID, Dr ain Curr en t [A]

0246810

10-1

100

101

150"

25"

-55"! Notes :

1. VDS = 25V

2. 2 50#s P ulse Te st

ID, D ra in C u rr en t [A]

VGS, Gate-Source Voltage [V]

10-1 100101

100

101 V GS

Top : 10.0 V

8 .0 V

6 .0 V

5 .0 V

4 .5 V

4 .0 V

3 .5 V

B o tto m : 3.0 V

N o te s :

1 . 2 5 0 #s Pulse Test

2 . T C = 25"

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitanc e C haracterist i cs Figure 6. Gate Charge C haracteris tics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation with Sour ce Cur r ent

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQT13N06L

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

! No te :

1. VGS = 10 V

2. I D = 1.4 A

RDS(ON) , (N o rmaliz e d)

Drain-Source On-Resistance

TJ, Junc tion Te m pera ture [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Note :

1 . VGS = 0 V

2 . ID = 250 #A

BV DSS , (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID, Drain Current [A]

TC, Case Temperature ["

]

10-1 100101102

10-2

10-1

100

101

10 ms

100 m s

1 ms100 µs

Op eratio n in T h is A re a

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101102103

10-1

100

101

102

! No te s :

1 . Z %JC(t) = 6 0 "/W Ma x .

2 . D u ty Fa c to r, D = t1/t2

3 . T JM - T C = PDM * Z %JC(t)

s in g le pu ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), Thermal R esponse

t1, S quare Wave P ulse Duration [sec]

Typical Characteristics (Continued)

PDM

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

Figu re 7. Breakdown Voltag e Variation

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Tr ansient Thermal Res pons e Cur ve

Rev. A, May 2001

FQT13N06L

Vin

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

Vin

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Gate Charge Test Circuit & Waveform

EAS =L

L IAS2

----

1--------------------

BVDSS -- VDD

BVDSS

EAS =L

L IAS2

----

EAS =L

L IAS2

----

1--------------------

BVDSS -- VDD

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switc hing Test Circuit & Waveform

Charge

VGS

5V Qg

Qgs Qgd

Charge

VGS

5V Qg

Qgs Qgd

VDD

VDS

10V DUT

VDD

VDS

10V DUT

VDD

( 0.5 rated VDS )

VDS RL

DUT

VDD

( 0.5 rated VDS )

VDS RL

DUT

FQT13N06L

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

Scontrolled by pulse period

VDD

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

Scontrolled by pulse period

VDD

10V

VGS

( Driver )

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

-------------------------- 10V

VGS

( Driver )

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

Peak Diode Recovery dv/dt Test Circuit & Waveform

FQT13N06L

Package Dimensions

3.00 ±0.10

7.00 ±0.30

0.65 ±0.20

0.08MAX

3.50 ±0.20

1.60 ±0.20

(0.46)

(0.89)

(0.60) (0.60)

1.75 ±0.20

0.70 ±0.10

4.60 ±0.25

6.50 ±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°

+0.10

–0.05

0.06 +0.04

–0.02

SOT-223

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all su ch trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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