Preliminary Data Sheet 1 of 5 Rev. 01, 2005-01-21
ESD: Electrostatic discharge sensitive device—observe handling precautions!
All published data at TCASE = 25°C unless otherwise indicated
Preliminary PTF080101M
Features
•Typical EDGE performance
- Average output power = 5.0 W
- Gain = 19 dB
- Efficiency = 37%
- EVM = 2.0 %
•Typical CW performance
- Output Power at P–1dB = 12.5 W
- Gain = 18 dB
- Efficiency = 50%
•Integrated ESD protection:
Human Body Model Class 1 (minimum)
•Excellent thermal stability
•Low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
RF Characteristics
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Units
Gain Gps —19 —dB
Drain Efficiency ηD—37 —%
Intermodulation Distortion IMD —–30 —dBc
High Power RF LDMOS Field Effect Transistor
10 W, PCS Band, 860 – 960 MHz
Description
The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE
applications in the 860 to 960 MHz band. This LDMOS device operates at
50% efficiency (P–1dB).
*See Infineon distributor for future availability.
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 180 mA, f = 960 MHz
14
15
16
17
18
19
20
21
20 25 30 35 40 45
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
PTF080101M*
Package TSSOP-10
Preliminary Data Sheet 2 of 5 Rev. 01, 2005-01-21
Preliminary PTF080101M
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD38 W
Above 25°C derate by 0.22 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 10 W DC )RθJC 4.6 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF080101M* TSSOP-10 Molded plastic, SMD PTF080101M
*See Infineon distributor for future availability.
Preliminary Data Sheet 3 of 5 Rev. 01, 2005-01-21
Preliminary PTF080101M
Typical Performance (data taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm
-20
-10
0
10
20
30
880 900 920 940 960 980 1000
Frequency (MHz)
Gain (dB), Return Loss (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Return Loss
Efficiency
Typical EDGE Performance
VDD = 28 V, IDQ = 180 mA, f = 959.8 MHz
0
1
2
3
4
5
28 30 32 34 36 38
Output Power (dBm)
RMS EVM (Average %).
0
10
20
30
40
50
Drain Efficiency (%)
EVM
Efficiency
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 180 mA, f = 959.8 MHz
-80
-70
-60
-50
-40
-30
26 28 30 32 34 36 38 40
Output Power (dBm)
Modulation Spectrum (dBc)
200 kHz
400 kHz
600 kHz
Two-tone Drive-up
VDD = 28 V, IDQ = 180 mA,
f = 960 MHz, 1 MHz tone spacing
-70
-60
-50
-40
-30
-20
20 25 30 35 40
Output Power, PEP (dBm)
IMD (dBc)
0
10
20
30
40
50
Drain Efficiency (%)
Efficiency
IM3
IM7
IM5
Preliminary Data Sheet 4 of 5 Rev. 01, 2005-01-21
Preliminary PTF080101M
Notes: Unless otherwise specified
1. Dimensions are mm
2. Lead thickness: 0.09
3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
Package Outline Specifications
Package TSSOP-10
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Preliminary Data Sheet 5 of 5 Rev. 01, 2005-01-21
Preliminary PTF080101M
Confidential—Limited Distribution
Revision History: 2005-01-21 Preliminary Data Sheet
Previous version: none
Page Subjects (major changes since last revision)
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2005-01-21
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
