Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 - 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency (P-1dB). PTF080101M* Package TSSOP-10 Features Gain & Efficiency vs. Output Power 21 70 20 60 19 50 Gain 18 40 17 30 20 16 Efficiency 15 Drain Efficiency (%) Gain (dB) VDD = 28 V, IDQ = 180 mA, f = 960 MHz 10 0 14 20 25 30 35 40 * Typical EDGE performance - Average output power = 5.0 W - Gain = 19 dB - Efficiency = 37% - EVM = 2.0 % * Typical CW performance - Output Power at P-1dB = 12.5 W - Gain = 18 dB - Efficiency = 50% * Integrated ESD protection: Human Body Model Class 1 (minimum) * Excellent thermal stability * Low HCI drift * Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power 45 Output Power (dBm) RF Characteristics Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps -- 19 -- dB Drain Efficiency D -- 37 -- % Intermodulation Distortion IMD -- -30 -- dBc *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! All published data at TCASE = 25C unless otherwise indicated Preliminary Data Sheet 1 of 5 Rev. 01, 2005-01-21 Preliminary PTF080101M DC Characteristics Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 A V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS -- -- 1.0 A On-State Resistance VGS = 10 V, V DS = 0.1 A RDS(on) -- 0.83 -- Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -0.5 to +12 V Junction Temperature TJ 200 C Total Device Dissipation PD 38 W 0.22 W/C Above 25C derate by Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 10 W DC ) RJC 4.6 C/W Ordering Information Type Package Outline Package Description Marking PTF080101M* TSSOP-10 Molded plastic, SMD PTF080101M *See Infineon distributor for future availability. Preliminary Data Sheet 2 of 5 Rev. 01, 2005-01-21 Preliminary PTF080101M Typical Performance (data taken in production test fixture) Broadband Performance Typical EDGE Performance VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm VDD = 28 V, IDQ = 180 mA, f = 959.8 MHz 30 60 50 5 10 40 0 30 20 Return Loss -20 880 900 920 940 960 980 3 30 2 20 10 1 EVM 0 0 10 1000 28 30 32 34 36 38 Output Power (dBm) Frequency (MHz) EDGE Modulation Spectrum Performance Two-tone Drive-up VDD = 28 V, IDQ = 180 mA, f = 959.8 MHz VDD = 28 V, IDQ = 180 mA, f = 960 MHz, 1 MHz tone spacing -30 -20 -40 -30 50 Efficiency 40 200 kHz IMD (dBc) Modulation Spectrum (dBc) 40 Efficiency -50 -60 400 kHz -40 30 IM5 IM3 -50 20 IM7 -60 -70 10 Drain Efficiency (%) -10 4 Drain Efficiency (%) 50 Gain RMS EVM (Average %). 20 Drain Efficiency (%) Gain (dB), Return Loss (dB) Efficiency 600 kHz -80 -70 26 28 30 32 34 36 38 25 30 35 40 Output Power, PEP (dBm) Output Power (dBm) Preliminary Data Sheet 0 20 40 3 of 5 Rev. 01, 2005-01-21 Preliminary PTF080101M Package Outline Specifications Package TSSOP-10 Notes: Unless otherwise specified 1. Dimensions are mm 2. Lead thickness: 0.09 3. Pins: 1 - 5 = gate, underside = source, 6 - 10 = drain Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Preliminary Data Sheet 4 of 5 Rev. 01, 2005-01-21 Preliminary PTF080101M Confidential--Limited Distribution Revision History: 2005-01-21 none Previous version: Page Preliminary Data Sheet Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS(R) is a registered trademark of Infineon Technologies AG. Edition 2005-01-21 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 5 of 5 Rev. 01, 2005-01-21