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Doc. No. 5SYA1660-01 Jul 03
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Repetitive peak reverse voltage VRRM 1700 V
Continuous forward current IF75 A
Repetitive peak forward current IFRM Limited by Tvjmax 150 A
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Tvj = 25 °C 1.7 2.0 2.3 V
Continuous forward voltage VFIF = 75 A Tvj = 125 °C 2.05 V
Tvj = 25 °C 100 µA
Continuous r everse curren t IRVR = 1700 V Tvj = 125 °C 1.5 mA
Peak reverse recovery current IRM 66 A
Reco vere d cha rge QRR 19 µC
Reverse recovery time trr 600 ns
Reverse recovery energy Erec
IF = 75 A, VR = 900 V,
-diF/dt = 800 A/µs, Lσ = 160 nH,
Tvj = 125 °C, Inductive load,
Switch : 5SMX12K1701 10 mJ
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Doc. No. 5SYA1660-01 Jul 03 page 2 of 3
0
25
50
75
100
125
150
0.00 0.50 1.00 1.50 2.00 2.50 3.00
VF [V]
I
F
[A]
25°C
125°C
-40°C
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150
IF [A]
E
rec
[mJ]
0
10
20
30
40
50
60
70
80
90
Q
RR
[µC], I
RM
[A]
IRM
Erec
QRR
VCC = 90 0 V
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 160 nH
)LJ Typical diode forward characteristics )LJ Typical reverse recovery characteristics
vs. forward current
-75
-50
-25
0
25
50
75
100
0 400 800 1200 1600
time [ns]
I
R
[A]
-1200
-1000
-800
-600
-400
-200
0
200
V
R
[V]
VR
IR
VCC = 900 V
IF = 75 A
di/dt = 800 A/µs
Tvj = 125 °C
Ls = 160 nH
0
2
4
6
8
10
12
14
0 400 800 1200 1600 2000
di/dt [A/µs]
E
rec
[mJ]
0
20
40
60
80
100
120
140
Q
RR
[µC], I
RM
[A]
Erec
QRR
VCC = 90 0 V
IF = 75 A
Tvj = 125 °C
Lσ = 160 nH
IRM
)LJ Typical diode reverse recovery behaviour )LJ Ty pical reverse recovery vs. di/dt
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA1660-01 Jul 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
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Overall die L x W 11.9 x 6.1 mm
exposed
front metal L x W 10.29 x 4.54 mm
Dimensions
thickness 370 ± 15 µm
front AISi1 4 µm
Metalli zat ion 1) back AI / Ti / Ni / Ag 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA20 33-01 Apr il 02.
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