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VRSM VRRM Type
V V
1200 1200 DSEI 2x 101-12A
Symbol Test Conditions Maximum Ratings (per diode)
IF(RMS) TVJ = TVJM 130 A
IF(AV)M ①TC = 50°C; rectangular, d = 0.5 91 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM TBD A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 900 A
t = 8.3 ms(60 Hz), sine 970 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 810 A
t = 8.3 ms(60 Hz), sine 870 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 4100 A2s
t = 8.3 ms(60 Hz), sine 4000 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 3300 A2s
t = 8.3 ms(60 Hz), sine 3200 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 250 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°C VR= VRRM 3mA
TVJ = 25°C VR= 0.8 • VRRM 1.5 mA
TVJ = 125°C VR= 0.8 • VRRM 15 mA
VFIF = 100 A; TVJ =150°C 1.61 V
TVJ = 25°C 1.87 V
VT0 For power-loss calculations only 1.01 V
rT6.1 mW
RthJC 0.5 K/W
RthCH 0.05 K/W
trr IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 40 60 ns
IRM VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs 24 30 A
L £ 0.05 mH; TVJ = 100°C
DSEI 2x 101 VRRM = 1200 V
IFAVM = 2x 91 A
trr = 40 ns
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
●International standard package
●miniBLOC (ISOTOP compatible)
●Isolation voltage 2500 V~
●matched diodes f. parallel operation
●Planar passivated chips
●two independent diodes
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
Fast Recovery
Epitaxial Diode (FRED)
miniBLOC, SOT-227 B
E72873
M4 screws (4x) supplied
miniBLOC, SOT-227 B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
008
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© 2000 IXYS All rights reserved 2 - 2
200 600 10000 400 800
200
250
300
350
400
450
500
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0.4
0.6
0.8
1.0
1.2
1.4
Kf
TVJ
°C-diF/dt
t
s
K/W
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
VFR
diF/dt
V
200 600 10000 400 800
20
60
100
140
0
40
80
120
100 1000
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0
0
25
50
75
100
125
150
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns
tfr
ZthJC
A/
m
s
µs
0.05
0.1
0.2
0.3
0.5
D=0.7
0.05 DSEI 2x101-12
Single Pulse
IF=200A
IF=100A
IF= 50A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 100A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ=100°C
TVJ=150°C
TVJ= 100°C
VR = 600V TVJ= 100°C
VR =600V
IF=200A
IF=100A
IF= 50A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF=200A
IF=100A
IF= 50A
tfr VFR
Fig. 7 Transient thermal impedance junction to case at various duty cycles
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.02 0.00002
2 0.05 0.00081
3 0.076 0.01
4 0.24 0.94
5 0.114 0.45
TVJ= 25°C
DSEI 2x 101, 1200V
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