V
RRM
= 150 V - 200 V
I
F(AV)
= 200 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR200150CT(R) Unit
Repetitive peak reverse
voltage V
RRM
150 V
RMS reverse voltage V
RMS
106 V
• Types from 150 V to 200 V V
RRM
MBR200150CT thru MBR200200CTR
200
141
MBR200200CT(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
DC blocking voltage V
DC
150 V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MBR200150CT(R) Unit
Average forward current
(per pkg) I
F(AV)
200 A
Maximum forward voltage
(per leg) 0.88
3
10
50
Thermal characteristics
Thermal resistance,
junction-case (per leg) R
ΘJC
0.45 °C/W
T
C
= 125 °C 200
Peak forward surge
current (per leg) I
FSM
t
p
= 8.3 ms, half sine 1500 1500
50
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated
DC blocking voltage (per
leg)
I
R
V
F
V
A
T
j
= 100 °C 10
T
j
= 25 °C
I
FM
= 100 A, T
j
= 25 °C
Conditions
-55 to 150
3
MBR200200CT(R)
0.45
T
j
= 150 °C
0.92
mA
-55 to 150
200
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1
MBR200150CT thru MBR200200CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR200150CT thru MBR200200CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
