Schottky Barrier Diode RB706D-40 Datasheet lDimensions (Unit : mm) lApplication lLand size figure (Unit : mm) Low current rectification 1.9 0.4 0.1 0.05 2.90.2 Each lead has same dimension 0.1 0.15 0.06 2) Low IR SMD3 (2) (1) 0.95 Silicon epitaxial planar 0.8MIN. lStructure +0.2 1.10.2 1.1 -0.1 0.01 1.90.2 Anode lTaping specifications (Unit : mm) Cathode 1.50.1 f1.50.1 0 2.00.05 0.30.1 3.20.1 3.50.05 3.20.1 5.50.2 00.5 f1.05MIN 1.05MIN 4.00.1 3.20.1 8.00.2 1.750.1 4.00.1 Cathode, Anode JEITA : SC-59 week code ROHM : SMD3 JEDEC :SOT-346 lConstruction 0.80.1 0.95 0.30.6 00.1 3) High reliability. 0.95 1.0MIN. 0.2 1.60.1 1) Small mold type. (SMD3) 2.80.2 lFeatures 2.4 (3) 1.350.1 lAbsolute maximum ratings (Ta= 25C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 45 V Reverse voltage (DC) VR 40 V Average rectified forward voltage (*1) Io 30 mA IFSM 200 mA Junction temperature Tj 125 C Storage temperature Tstg -40 to +125 C Forward current surge peak (60Hz1cyc) (*1) (*1) Rating of per diode : lo/2 lElectrical characteristics (Ta = 25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF1 - - 0.37 V IF=1mA Reverse current IR1 - - 1 mA VR=10V Capacitance between terminals Ct1 - 2.0 - pF VR=1V , f=1MHz www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.04 - Rev.D Data Sheet RB706D-40 lElectrical characteristic curves 1000 100 REVERSE CURRENT : IR(mA) FORWARD CURRENT : IF(mA) Tj = 125C Tj = 75C 10 1 Tj = 25C 0.1 0.01 Tj = -25C 1 0.1 Tj = 25C 0.01 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 10 20 30 Tj=25C IF=1mA n=30pcs 290 280 AVE : 267.4mV 270 260 250 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 0 300 f = 1MHz 1 Tj = -25C REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10 Tj = 75C 10 0.001 0 100 200 300 400 500 600 700 800 9001000 Tj = 125C 100 VF DISPERSION MAP 2/5 2013.04 - Rev.D Data Sheet RB706D-40 lElectrical characteristic curves 10 1 REVERSE CURRENT : IR(mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 AVE : 0.083mA 0.2 Tj=25C f=1MHz VR=1V n=10pcs 9 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Tj=25C VR=10V n=30pcs 8 7 6 5 4 AVE : 2.00pF 3 2 0.1 1 0 0 IR DISPERSION MAP Ct DISPERSION MAP 10 IFSM 15 10 8.3ms 1cyc. AVE : 7.30A 5 PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 20 0 9 8 8.3ms 8.3ms 1cyc. 7 6 5 4 3 2 1 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. IFSM 3/5 2013.04 - Rev.D Data Sheet RB706D-40 lElectrical characteristic curves 9 IFSM 8 time 7 6 5 4 3 2 1 0 1 10 1000 TRANSIENT THERMAL IMPEDANCE : Rth (C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) 10 Rth(j-a) 100 Rth(j-c) Mounted on glass epoxy board 10 IM=1mA IF=10mA time 1ms 300ms 1 0.001 100 0.1 10 1000 TIME : t(s) Rth-t CHARACTERISTICS TIME : t(ms) IFSM-t CHARACTERISTICS 0.04 0.003 D = 1/2 REVERSE POWER DISPERSION : PR (W) FORWARD POWER DISPERSION : PF (W) 0.03 0.02 0.00 0.01 0.02 0.03 0.04 0 0.05 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-PF CHARACTERISTICS www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. D = 1/2 0.001 DC 0.01 0.00 DC 0.002 Sin(=180) Sin(=180) 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 4/5 2013.04 - Rev.D Data Sheet RB706D-40 lElectrical characteristic curves AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.08 t T DC 0.06 D = 1/2 0.04 0.02 Sin(=180) 0 25 50 75 100 0.08 t T VR D=t/T VR=20V Tj=125C DC 0.06 D = 1/2 0.04 0.02 0 125 AMBIENT TEMPERATURE : Ta(C) DERATING CURVE (Io-Ta) www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 0V Per chip VR D=t/T VR=20V Tj=125C Io 0A 0.1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0V Per chip 0 Io 0A 0.1 Sin(=180) 0 25 50 75 100 125 CASE TEMPERATURE : Tc(C) DERATING CURVE (Io-Tc) 5/5 2013.04 - Rev.D Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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