P-CHANNEL
POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3098
Issue 2
Page 1 of 3
IRFF9130 / 2N6849
• MOSFET Transistor In A Hermetic Metal TO-205AF Package
• Single Pulse Avalanche Energy Rated
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage -100V
VDG Drain – Gate Voltage RGS = 20KΩ -100V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C -6.5A
ID Continuous Drain Current Tc = 100°C -4.1A
IDM Pulsed Drain Current
(1)
-25A
PD Total Power Dissipation at Tc = 25°C 25W
Derate Above 25°C 0.2W/°C
EAS Single Pulse Avalanche Energy
(2)(4)
500mJ
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 5 °C/W
RθJA
Thermal Resistance, Junction To Ambient 175 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Typ. Units
LS + LD Total Inductance 7 nH
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = -25V, Starting TJ = 25°C, L = 17.25mH, Peak IL = -6.5A, VGS = -10V
(3) Pulse Width ≤ 300us, δ ≤ 2%
(4) By Design Only, Not A Production Test.
P-CHANNEL
POWER MOSET
IRFF9130 / 2N6849
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3098
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = -1.0mA -100 V
J
T
VDSS
B
∆
∆
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C ID = -1.0mA -0.1 V/°C
VGS = -10V ID = -4.1A
(3)
0.3
TJ = 125°C 0.54
RDS(on) Static Drain-Source
On-State Resistance
VGS = -10V ID = -6.5A
(3)
0.32
Ω
VDS = VGS ID = -250
µ
A -2 -4
TJ = 125°C -1.0
VGS(th) Gate Threshold Voltage
TJ = -55°C -5
V
gfs Forward Transconductance VDS
≥
-5V I DS = -4.1A
(3)
2.5 3.5 7.5 S(
Ʊ
)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 250
µ
A
VGS = 20V 100
IGSS Forward Gate-Source
Leakage TJ = 125°C 200
VGS = -20V -100
IGSS Reverse Gate-Source
Leakage TJ = 125°C -200
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 800
Coss Output Capacitance VDS = -25V 350
Crss Reverse Transfer
Capacitance f = 1.0MHz 125
pF
Qg
(4)
Total Gate Charge VGS = -10V 34.8
Qgs
(4)
Gate-Source Charge ID = -6.5A 6.8
Qgd
(4)
Gate-Drain Charge VDS = 0.5BVDSS 23.1
nC
td(on) Turn-On Delay Time 60
tr Rise Time 140
td(off) Turn-Off Delay Time 140
tf Fall Time
VDD = -40V
ID = -4.1A
RG = 7.5
Ω
140
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current -6.5
ISM Pulse Source Current
(1)
-25
A
IS = -6.5A TJ = 25°C
VSD Diode Forward Voltage VGS = 0
(4)
-4.3 V
trr Reverse Recovery Time IS = -6.5A TJ = 25°C 250 ns
Qrr Reverse Recovery Charge VDD
≤
-50V di/dt = 100A/
µ
s
(3)
3
µ
C
P-CHANNEL
POWER MOSET
IRFF9130 / 2N6849
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3098
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AF
)
Pin 1 - Source Pin 2 - Gate Pin 3 - Drain
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
