2SA1209 / 2SC2911 Ordering number : EN0779E SANYO Semiconductors DATA SHEET 2SA1209 / 2SC2911 PNP / NPN Epitaxial Planar Silicon Transistors 160V / 140mA High-Voltage Switching and AF 100W Predriver Applications Features * * * * Adoption of FBET process. High breakdown voltage. Good linearity of hFE and small Cob. Fast switching time. Specifications ( ) : 2SA1209 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V Collector-to-Emitter Voltage VCEO (--)160 V Emitter-to-Base Voltage VEBO (--)5.0 V IC (--)140 mA ICP (--)200 mA Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 1.0 W 10 W 150 C --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61307CB TI IM TC-00000752 / 70502TN (KT) / 71598HA (KT) / D251MH / 5147KI / 3135KI / O193KI,TS No.0779-1/5 2SA1209 / 2SC2911 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)0.1 A Emitter Cutoff Current IEBO hFE VEB=(--)4V, IC=0A (--)0.1 A DC Current Gain Gain-Bandwidth Product VCE=(--)5V, IC=(--)10mA VCE=(--)10V, IC=(--)10mA fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage Storage Time Fall Time tf MHz (4.0)3.0 IC=(--)50mA, IB=(--)5mA See specified Test Circuit. ton tstg 400* 150 VCB=(--)10V, f=1MHz VCE(sat) Turn-On Time 100* pF (--0.14)0.07 (--0.4)0.3 V 0.1 s See specified Test Circuit. 1.5 s See specified Test Circuit. 0.1 s * : The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7515-002 IB1 8.0 3.0 2.7 IN OUT IB2 3k 4.0 RB 11.0 1.5 7.0 2k 5k 50 + 1F 1F 3.0 1.6 0.8 0.8 + IC=10IB1=--10IB2=10mA For PNP, minus sign is omitted. 15.5 0.6 2 1 : Emitter 2 : Collector 3 : Base 3 1.2 1 20V --2V 0.5 2.4 4.8 SANYO : TO-126 IC -- VCE A m --0.5 4mA --0. --100 A --0.3m --80 --0.2mA --60 --40 --0.1mA --20 0 0 2SC2911 mA A 120 A 6m . --0 Collector Current, IC -- mA Collector Current, IC -- mA --120 IC -- VCE 140 2SA1209 0.5 0.6 m --140 0.4mA 100 0.3mA 80 0.2mA 60 40 0.1mA 20 IB=0mA --10 --20 --30 --40 --50 --60 Collector-to-Emitter Voltage, VCE -- V --70 ITR03021 IB=0mA 0 0 10 20 30 40 50 60 Collector-to-Emitter Voltage, VCE -- V 70 ITR03022 No.0779-2/5 2SA1209 / 2SC2911 IC -- VBE --140 IC -- VBE 140 2SC2911 2SA1209 120 Collector Current, IC -- mA Collector Current, IC -- mA --120 --100 --80 --60 --40 --20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V 40 0 0.2 0.4 2 100 7 5 1.0 ITR03024 2SC2911 VCE=5V 7 5 DC Current Gain, hFE 3 0.8 hFE -- IC 1000 5 0.6 Base-to-Emitter Voltage, VBE -- V ITR03023 2SA1209 VCE=--5V 7 DC Current Gain, hFE 60 0 --1.0 hFE -- IC 1000 3 2 100 7 5 3 3 2 2 10 10 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC -- mA 3 2SA1209 VCE=--10V 2 100 100 7 5 3 10 2 2 3 5 7 10 2 3 5 2 7 100 2 ITR03026 f T -- IC 2SC2911 VCE=10V 100 100 7 5 3 10 2 10 2 3 5 7 2 --10 3 5 Collector Current, IC -- mA 7 --100 2 ITR03027 1.0 7 10 7 5 10 3 2 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 ITR03029 7 2 10 3 5 7 100 2 ITR03028 Cob -- VCB 2SC2911 f=1MHz 5 Output Capacitance, Cob -- pF 3 100 2 5 5 7 5 3 3 100 2SA1209 f=1MHz 2 2 Collector Current, IC -- mA Cob -- VCB 100 1.0 --1.0 7 1.0 Collector Current, IC -- mA f T -- IC 3 10 --1.0 5 7 --100 2 ITR03025 Gain-Bandwidth Product, f T -- MHz 5 Gain-Bandwidth Product, f T -- MHz 80 20 0 0 Output Capacitance, Cob -- pF 100 3 100 2 10 7 5 10 3 2 1.0 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR03030 No.0779-3/5 --1.0 7 5 3 2 --0.1 7 5 3 2 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC -- mA VBE(sat) -- IC --10 2SA1209 IC / IB=10 7 5 3 2 --1.0 7 5 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC -- mA 7 --100 2 ITR03033 VCE(sat) -- IC 1.0 2SC2911 IC / IB=10 7 5 3 2 0.1 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 2 ITR03032 VBE(sat) -- IC 10 2SC2911 IC / IB=10 7 5 3 2 1.0 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA ASO 5 7 100 2 ITR03034 PC -- Ta 1.2 2SA1209 / 2SC2911 3 ICP=200mA 2 s 1m 1s Collector Current, IC -- mA 7 --100 2 ITR03031 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA1209 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VCE(sat) -- IC 2 IC=140mA 100 Collector Dissipation, PC -- W Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA1209 / 2SC2911 7 DC 5 op era tio 3 n 2 10 7 5 2SA1209 / 2SC2911 DC Single pulse For PNP, minus sign is omitted 3 2 2 3 5 7 10 2 3 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR03035 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR03036 PC -- Tc 12 Collector Dissipation, PC -- W 2SA1209 / 2SC2911 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 ITR03037 No.0779-4/5 2SA1209 / 2SC2911 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No.0779-5/5