TLP421F
2007-10-01
1
TOSHIBA Photocoupler GaAs IRed & PhotoTransistor
TLP421F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421F consists of a silicone phototransistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
Absolute maximum ratings and electrical characteristics are the same as
TLP421 technical datasheet.
Collectoremitter voltage: 80V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577
BSI approved: BS EN60065: 2002
Approved no. 8411
BS EN60950-1: 2002
Approved no. 8412
SEMKO approved: EN60065, EN60950, EN60335
Approved no. 9910249 / 01
Pin Configurations
(top view)
1
23
4
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
Unit in mm
TOSHIBA 115B202
Weight: 0.26 g (typ.)
TLP421F
2007-10-01
2
Option (D4) type
TUV approved: DIN EN 60747-5-2
Approved no. 40010944
Maximum operating insulation voltage: 1130VPK
Maximum permissible over voltage: 8000VPK
(Note): When an EN 60747-5-2 approved type is needed,
please designate the “ Option (D4) ”
Making VDE application: DIN EN 60747-5-2
Construction mechanical rating
10.16mm pitch
TLP421F type
Creepage distance
Clearance
Insulation thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
TLP421F
2007-10-01
3
RESTRICTIONS ON PRODUCT USE
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