TPS601A(F)
2007-10-01
1
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS601A(F)
Photoelectric Counter
Position Detection
Various Kinds Of Readers
• TO−18 metal CAN package
• High sensitivity.
• Sharp directivity. Incident light can be effectively used.
: θ1/2 = ± 10° (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector−emitter voltage VCEO 40 V
Emitter−collector voltage VECO 5 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation
derating (Ta > 25°C) ΔPC /°C −1.2 mW / °C
Operating temperature range Topr −40~125 °C
Storage temperature range Tstg −55~150 °C
Pin Connection
1 . Emitter
2 . Collector
1
2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit in mm
TOSHIBA 0−5A1
Weight: 0.39 g (typ.)
TPS601A(F)
2007-10-01
2
Opto−Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Dark current ID (ICEO) VCE = 30V, E = 0 ― 0.01 0.2 μA
TPS601A (F) 100 ― ―
TPS601A (A,F) 100 ― 300
TPS601A (B,F) 200 ― 600
Light current IL
VCE = 3V
E = 0.1mW / cm2
(Note)
TPS601A (C,F) 400 ― 1200
μA
Collector−emitter saturation
voltage VCE (sat) IC = 30 μA, E = 0.1mW / cm2
(Note) ― 0.25 0.4 V
rise time tr ― 2 ―
Switching time
fall time tf
VCC = 5V, IC = 10mA
RL = 100Ω ― 2 ―
μs
Peak sensitivity wavelength λP ― 800 ― nm
Half value angle θ2
1 ― ±10 ― °
Note: Color temperature = 2870K, standard tungsten lamp.
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max.
Soldering time: 5s max.
(Soldering portion of lead: Above 1.5mm from the body of the device.)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.
Product Indication
Monthly production lot
Letter color : Red
Production year(last digit of A.D. is indicated)
S601A
・
Production month
(Jan-Dec are indicated by alphabets of A-L)
Model name
TPS601A(F)
2007-10-01
3
Fig.1 Switching time test circuit
Output
RL
R
Input
TLN108(F)
(GaAs LED)
Input pulse
Output pulse
0
0
tr
90%
10%
tf
VCC
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
Dissipation PC (mW)
0 40 120 160 200
80
0
40
80
120
160
I
D – Ta (typ.)
Dark current ID (
μA)
Ambient temperature Ta (°C)
VCE = 30 V
E = 0
0
10-2
160
120 80
40
10
10-4
10-3
10-1
1
102
0.1
I
L – E (typ.)
0.1 0.3 1 3 10 30
3
0.3
0.5
10
30
5
50
1
Light current IL (mA)
Radiant incidence E (mW/cm2)
VCE = 3V
Ta = 25°C
Color Temperature=2870K
Spectral Response (typ.)
Relative sensitivity (%)
Wavelength λ (nm)
1
400 1000 800
600
30
3
5
100
50
200
10
1200
Ta = 25°C
TPS601A(F)
2007-10-01
4
(Ta = 25°C)
Relative sensitivity
Radiation Angle
1.0 0 0.2 0.4 0.6 0.8
50°
60°
70°
80°
90°
40°
50°
60°
70°
80°
90°
10° 20°
30°
40°
30°
20°
10° 0°
Directional Sensitivity Characteristic
(typ.)
Frequency Characteristics
(typ.)
Relative input (dB)
Frequency f (kHz)
-201 10 100 300 1000
12
0
-4
-8
-12
-16
4
30
8
1200
VCC = 5V
Ta = 2 5℃
Light source = TLN108(F)
(Ga
A
s
LED
)
1kΩ
500Ω
RL=100Ω
Switching time (μs)
Switching Characteristics
(typ.)
Collector current IC (mA)
3
5
10
50
100
30
200
1
0.1 0.3 1 3 10 0.02
td (RL=10kΩ)
td (RL=100Ω, 1kΩ)
tf (RL=100Ω)
tr (RL=100Ω)
tr (RL=10kΩ)
tr (RL=1kΩ)
tf (RL=1kΩ)
tf (RL=10kΩ)
90%
10%
Ta=25°C
td
Input
pulse
Output
pulse
VCC
10V
Output
RL
TLN108(F)
(GaAs LED)
Input
tr tf
R
TPS601A(F)
2007-10-01
5
Relative IL – Ta (typ.)
Ambient temperature Ta (°C)
Relative light current
2.0
-40 100 -20 0 20
40 60 80
0
1.6
1.2
0.8
0.4
E = 0.1mW/cm2
VCE = 3V
0.1
1
100
1000
3 5 10 30 50 100 300 500
50
30
10
5
3
1
0.5
0.3
Distance d (mm)
Coupling Characteristics With
TLN201(F)
Collector current IC (mA)
TPS601A(F) using sample
IL = 226μA
at VCE = 3V
E = 0.1mW/cm
2
Ta = 25℃
d
IE=25.5mW/sr
1
Distance d (mm)
Collector current IC (mA)
Coupling Characteristics With
TLN108(F)
5
100
0.1
0.5 200
50
30
10
5
3
1
0.3
1 3 10 30 50
100
0.5
TPS601A(F) … I
L = 226μA
at VCE = 3V
E = 0.1mW/cm2
Ta =2 5°C
d
IE=4mW/sr 23
11.7
TPS601A(F)
2007-10-01
6
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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