R07DS0590EJ0100 Rev.1.00 Page 1 of 6
Dec 12, 2011
Preliminary Data Sheet
NP109N055PUK
MOS FIELD EFFECT TRANSISTOR
Description
The NP109N055PUK is N-ch annel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)
Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)
Designed for automotive app lication and AEC-Q101 qualified
Ordering Information
Part No. Lead Plating Packing Package
NP109N055PUK-E1-AY *1 Taping (E1 type)
NP109N055PUK-E2-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E2 type) TO-263 (MP-25ZP)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings (TA = 25°C)
Item Symbol Ratings Unit
Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS 20 V
Drain Current (DC) (TC = 25°C) ID(DC) 110 A
Drain Current (pulse) *1 I
D(pulse) 440 A
Total Power Dissipation (TC = 25°C) PT1 250 W
Total Power Dissipation (TA = 25°C) PT2 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg –55 to 175 °C
Repetitive Avalanche Current *2 I
AR 51 A
Repetitive Avalanche Energy *2 E
AR 260 mJ
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Thermal Resistance
Channel to Case Thermal Resistance Rth(ch-C) 0.60 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
R07DS0590EJ0100
Rev.1.00
Dec 12, 2011
NP109N055PUK
R07DS0590EJ0100 Rev.1.00 Page 2 of 6
Dec 12, 2011
Electrical Characteristics (TA = 25°C)
Item Symbol MIN. TYP. MAX. Unit Test Conditions
Zero Gate Voltage Drain Current IDSS — — 1 A VDS = 55 V, VGS = 0 V
Gate Leakage Current IGSS — — 100 nA VGS = 20 V, VDS = 0 V
Gate to Source Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250 A
Forward Transfer Admittance *1 | yfs | 50 100 — S VDS = 5 V, ID = 55 A
Drain to Source On-state Resistance *1 R
DS(on) — 1.85 2.20 m V
GS = 10 V, ID = 55 A
Input Capacitance Ciss — 7500 11250 pF
Output Capacitance Coss — 770 1160 pF
Reverse Transfer Capacitanc e Crss — 270 490 pF
VDS = 25 V
VGS = 0 V
f = 1 MHz
Turn-on Delay Time td(on) — 30 70 ns
Rise Time tr — 14 40 ns
Turn-off Delay Time td(off) — 105 210 ns
Fall Time tf — 11 30 ns
VDD = 28 V, ID = 55 A
VGS = 10 V
RG = 0
Total Gate Charge QG — 126 189 nC
Gate to Source Charge QGS — 32 — nC
Gate to Drain Charge QGD — 31 — nC
VDD = 44 V
VGS = 10 V
ID = 110 A
Body Diode Forward Voltage *1 V
F(S-D) — 0.9 1.5 V IF = 110 A, VGS = 0 V
Reverse Recovery Time trr — 62 — ns
Reverse Recovery Charge Qrr — 135 — nC
IF = 110 A, VGS = 0 V
di/dt = 100 A/s
Note: *1 Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20 → 0 V
PG.
RG = 25 Ω
50 Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50 Ω
D.U.T.
RL
VDD
ID
VDD
IAS VDS
BVDSS
Starting Tch
VGS
0
Duty Cycle ≤ 1%
τ = 1 μs
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
V
GS
V
DS
ton toff
t
d(on)
t
r
t
d(off)
t
f
10% 10%
NP109N055PUK
R07DS0590EJ0100 Rev.1.00 Page 3 of 6
Dec 12, 2011
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
0
20
40
60
80
100
120
dT - Percentage of Rated Power - %
0 25 50 75 100 125 150 175
T
C
- Case Temperature - °C
0.1 m 1 m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
50
100
150
250
300
200
0 25 50 75 100 125 150 175
T
C
- Case Temperature - °C
P
T
- Total Power Disslpation - W
FORWARD BIAS SAFE OPERATING AREA
0.1
1
10
100
1000
0.1 1 10 100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
0.01
0.1
1
10
100
1000
R
th(t)
- Transient Thermal Resistance - °C/W
Power Dissipation Limited
I
D(Pulse)
= 440 A
I
D(DC)
= 110 A
R
DS(ON)
Limited
(V
GS
=10 V)
Single pulse
R
th(ch-C)
= 0.60°C/W
TC = 25°C
Single Pulse
R
th(ch-A)
= 83.3°C/W
Secondary Breakdown Limited
PW = 1 ms
PW = 10 ms
DC
PW = 100 μs
NP109N055PUK
R07DS0590EJ0100 Rev.1.00 Page 4 of 6
Dec 12, 2011
FORWARD TRANSFER CHARACTERISTICS
0.001
0.01
0.1
1
10
1000
100
0123456
V
GS
- Gate to Source Voltage - V
I
D
- Drain Curent - A
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
0
1
2
3
4
–100 –50 0 50 100 150 200
T
ch
- Channel Temperature - °C
V
GS(th)
- Gate to Source Threshold Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
10
1000
100
1 10 100 1000
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
2
4
1
3
5
1 10 100 1000
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0 5 10 15 20
V
GS
- Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
100
200
300
500
400
0 0.2 0.4 0.6 0.8 1.0
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
4
1
3
5
R
DS(on)
- Drain to Source On-State Resistance - mΩ
V
DS
= V
GS
I
D
= 250 μA
V
DS
= 10 V
Pulsed
T
A
= –55°C
25°C
85°C
150°C
175°C
V
GS
= 10 V
Pulsed
V
GS
= 10 V
Pulsed
I
D
= 55 A
Pulsed
T
A
= –55°C
25°C
85°C
150°C
175°C
V
DS
= 5 V
Pulsed
NP109N055PUK
R07DS0590EJ0100 Rev.1.00 Page 5 of 6
Dec 12, 2011
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
1000
100000
10000
0.1 1 10 100
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance -pF
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
10
100
0.1 1 10 1000100
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
SWITCHING CHARACTERISTICS
1
10
100
1000
0.1 1 10 1000100
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
5
10
15
20
25
30
35
45
40
55
50
0 20 40 60 80 100 140120
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
2
4
6
8
10
1
3
5
7
9
11
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
–100 –50 0 50 100 150 200
T
ch
- Channel Temperature - °C
0
2
4
1
3
5
R
DS(on)
- Drain to Source On-State Resistance - mΩ
V
DD
= 28 V
V
GS
= 10 V
R
G
= 0 Ω
t
d(off)
t
d(on)
t
r
t
f
I
D
= 110 A
V
GS
V
DS
di/dt = 100 A/μs
V
GS
= 0 V
V
GS
= 10 V
I
D
= 55 A
Pulsed
V
GS
= 10 V
V
GS
= 0 V
Pulsed
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DD
= 44 V
28 V
11 V
NP109N055PUK
R07DS0590EJ0100 Rev.1.00 Page 6 of 6
Dec 12, 2011
Package Drawing (Unit: mm)
TO-263 (MP-25ZP) (Mass : 1.5 g TYP.)
No plating
7.88 MIN.
2.54
0.75 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
2.54 ±0.25
15.25 ±0.5
1.35 ±0.3
213
4
2.5
4.45 ±0.2
1.3 ±0.2
0.6 ±0.2
0 to 8°
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.025
to 0.25
0.25
10.0 ±0.3
Equivalent Circuit
Source
Body
Diode
Gate
Drain
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NP109N055PUK Data Sheet
Description
Rev. Date Page Summary
1.00 Dec 12, 2011 — First Edition Issued
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