AOT404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOT404 is Pb-free (meets ROHS & Sony 259 specifications). AOT404L is a Green Product ordering option. AOT404 and AOT404L are electrically identical. VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 m (VGS =10V) @ 20A RDS(ON) < 31 m (VGS = 6V) TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Continuous Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B 25 V Junction and Storage Temperature Range A 28 ID IDM 100 IAR 20 A EAR 200 mJ 100 PD TC=100C W 50 TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Steady-State Symbol RJA Maximum Junction-to-Case B Steady-State RJC Alpha Omega Semiconductor, Ltd. Units V 40 TC=100C Pulsed Drain Current Maximum 105 C Typ 50 Max 60 Units C/W 1 1.5 C/W AOT404 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=10mA, VGS=0V 105 1 TJ=55C 5 Gate-Body leakage current VDS=0V, VGS=25V Gate Threshold Voltage VDS=VGS, ID=250A 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 100 VGS=10V, ID=20A 53 VGS=6V, ID=20A 24 31 VDS=5V, ID=20A 50 Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 0.73 2038 nA V m m 1 V 55 A 2445 204 VGS=0V, VDS=0V, f=1MHz 1.3 1.56 38.5 46 pF pF 85 VGS=10V, VDS=50V, RL=2.7, RGEN=3 A S VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=50V, ID=30A Units A 44 gFS Crss 4 28 Static Drain-Source On-Resistance Output Capacitance 3.2 21.5 RDS(ON) Coss Max V VDS=84V, VGS=0V VGS(th) IS Typ pF nC 7.7 nC 13.4 nC 12.7 ns 8.2 ns 31.5 ns 11.2 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/s 61.6 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s 172.4 74 ns nC A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOT404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 VDS=5V 20 6V ID(A) ID (A) 60 40 125C 10 5V 25C 20 VGS=4.5V 0 0 0 1 2 3 4 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 40 2.4 Normalized On-Resistance RDS(ON) (m) 2.5 30 VGS=6V 20 VGS=10V 2.2 VGS=10V, 20A 2 1.8 1.6 VGS=6V,20A 1.4 1.2 1 10 0 10 20 30 0.8 40 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 60 1.0E+01 50 125C 125C IS (A) RDS(ON) (m) 1.0E+00 ID=30A 40 1.0E-01 1.0E-02 25C 30 1.0E-03 25C 1.0E-04 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=30A Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 1 Coss 2 0 Crss 0 0 10 20 30 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 300 TJ(Max)=175C, TA=25C TJ(Max)=175C TA=25C 10 100s RDS(ON) limited Power (W) ID (Amps) 100 1ms, DC 200 100 1 0 0.0001 0.1 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 0.1 AOT404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 ID(A), Peak Avalanche Current t A = L BV 40 I D - V DD Power Dissipation (W) 60 TA=25C TA=150C 20 0 0.000001 0.0001 0.001 40 30 20 10 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 50 Current rating ID(A) 50 0 0.00001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175