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MRF9030NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large -signal, common-source amplifier applications in 26 volt
base station equipment.
•Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
•Integrated ESD Protection
•Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large- Signal Impedance Parameters
•Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
•200_C Capable Plastic Package
•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
•TO-270- 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, + 15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD139
0.93
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 1.08 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model C7 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF9030N
Rev. 12, 9/2008
Freescale Semiconductor
Technical Data
MRF9030NR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-09, STYLE 1
TO-270- 2
PLASTIC
Freescale Semiconductor, Inc., 2008. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF9030NR1
Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th) 2 2.9 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q) 3 3.8 5 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on) — 0.23 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 2.7 — S
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 49 — pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 27 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.2 — pF
Functional Tests (In Freescale Test Fixture)
Two-Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps 18 20 — dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η37 41 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL — -13 -9 dB
Two-Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps — 20 — dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η— 40.5 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD — -31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL — -12 — dB
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MRF9030NR1
3
RF Device Data
Freescale Semiconductor
Figure 1. 930- 960 MHz Broadband Test Circuit Schematic
Z1 0.260″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″Microstrip
Z4 0.200″ x 0.270″Microstrip
Z5 0.330″ x 0.270″ Microstrip
Z6 0.140″ x 0.270″x 0.520″, Taper
Z7 0.040″ x 0.520″ Microstrip
Z8 0.090″ x 0.520″Microstrip
Z9 0.370″ x 0.520″Microstrip (MRF9030NR1)
0.290″ x 0.520″Microstrip (MRF9030NBR1)
Z10 0.130″ x 0.520″ Microstrip (MRF9030NR1)
0.210″ x 0.520″ Microstrip (MRF9030NBR1)
Z11 0.360″ x 0.270″ Microstrip
Z12 0.050″ x 0.270″ Microstrip
Z13 0.110″ x 0.060″ Microstrip
Z14 0.220″ x 0.060″ Microstrip
Z15 0.100″ x 0.060″ Microstrip
Z16 0.870″ x 0.060″ Microstrip
Z17 0.240″ x 0.060″ Microstrip
Z18 0.340″ x 0.060″ Microstrip
Board Taconic RF-35-0300, εr = 3.5
Z14
C18
RF
INPUT
RF
OUTPUT
Z1 Z2
VGG
C1
L1
VDD
Z3 Z10 Z11
Z9
L2
B2
Z4 Z13
C16
B1
C8
C2
C5
C17
C9
Z15 Z18
C14
++++
DUT
C7 C15
C3 C4 C6 C10 C11 C12
Z16 Z17
Z8
C13
Z5 Z6 Z7 Z12
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short Ferrite Bead, Surface Mount 2743019447 Fair-Rite
B2 Long Ferrite Bead, Surface Mount 2743029446 Fair-Rite
C1, C7, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2 0.6-4.5 Variable Capacitor, Gigatrim 27271SL Johanson
C3, C11 3.9 pF Chip Capacitors ATC100B3R6BT500XT ATC
C4, C12 0.8-8.0 Variable Capacitors, Gigatrim 27291SL Johanson
C5, C6 6.8 pF Chip Capacitors ATC100B7R5JT500XT ATC
C8, C16, C17 10 µF, 35 V Tantulum Chip Capacitors T491D106K035AT Kemet
C9, C10 10 pF Chip Capacitors ATC100B100JT500XT ATC
C13 1.8 pF Chip Capacitor (MRF9030NR1)
0.6-4.5 Variable Capacitor, Gigatrim (MRF9030NBR1)
ATC100B1R8BT500XT
27271SL
ATC
Johanson
C18 220 µF Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp
L1, L2 12.5 nH Coilcraft Inductors A04T-5 Coilcraft
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4
RF Device Data
Freescale Semiconductor
MRF9030NR1
Figure 2. 930- 960 MHz Broadband Test Circuit Component Layout
900 MHz
CUT OUT AREA
Rev 02
VGG
VDD
B1
B2
C1
C2
C3 C4
C5
C6
C7
C8
C9
C10 C11 C12 C13
C14
C15 C16 C17
C18
WB1 WB2
L1 L2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
N
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MRF9030NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
960
14
22
930
−38
50
IRL
η
IMD
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two−Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
Gps, POWER GAIN (dB)
−10
−18
−14
, DRAINh
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
−12
−16
21 45
20 40
19 35
18 −30
17 −32
16 −34
15 −36
955950945940935
100
18.5
21.5
0.1
IDQ = 375 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Gps, POWER GAIN (dB)
21
20.5
20
19.5
19
101
250 mA
200 mA
100
−55
−15
0.1
IDQ = 200 mA
375 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−25
−30
−35
−40
−45
−50
101
250 mA
300 mA
100
−80
−10
0.1
7th Order
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−30
−40
−50
−60
−70
101
5th Order
3rd Order
100
10
22
0.1
0
60
Gps
η
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
20 50
18 40
16 30
14 20
12 10
101
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6
RF Device Data
Freescale Semiconductor
MRF9030NR1
TYPICAL CHARACTERISTICS
100
10
22
0.1
−60
60
Gps
η
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
Gps, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)IMD,
, DRAIN EFFICIENCY (%)η
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
20 40
18 20
16 0
14 −20
12 −40
101
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
109
107
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
Figure 9. MTTF Factor versus Junction Temperature
108
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MRF9030NR1
7
RF Device Data
Freescale Semiconductor
f
MHz
Zsource
Ω
Zload
Ω
930
945
960
1.07 + j0.160
1.17 + j0.170
1.14 + j0.385
3.53 - j0.20
3.41 - j0.24
3.60 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP)
Note: Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Figure 10. Series Equivalent Source and Load Impedance
f = 930 MHz
f = 930 MHz
f = 960 MHz
Zo = 5 Ω
f = 960 MHz
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource Zload
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8
RF Device Data
Freescale Semiconductor
MRF9030NR1
PACKAGE DIMENSIONS
N
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MRF9030NR1
9
RF Device Data
Freescale Semiconductor
N
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10
RF Device Data
Freescale Semiconductor
MRF9030NR1
N
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MRF9030NR1
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
12 Sept. 2008 •Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
•Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 8-10. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
•Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
•Removed Fig. 3, Test Circuit Component Layout (MRF9030NBR1) and Fig. 12, Series Equivalent Source
and Load Impedance (MRF9030NBR1), renumbered Figures accordingly, p. 4-7
•Added Product Documentation and Revision History, p. 11
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12
RF Device Data
Freescale Semiconductor
MRF9030NR1
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Document Number: MRF9030N
Rev. 12, 9/2008
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