For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC817LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
v00.1108
General Description
Features
Functional Diagram
Typical Applications
The HMC817LP4E is a GaAs pHEMT Dual Chan-
nel Low Noise Amplier that is ideal for Cellular/3G
and LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplier
has been optimized to provide 0.5 dB noise gure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC817LP4E shares
the same package and pinout with the HMC816LP4E
and HMC818LP4E LNAs. The HMC817LP4E can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
Noise Figure: 0.5 dB
Gain: 16 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
The HMC817LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Multi-Channel Applications
• Access Points
Parameter Vdd = +3 V Vdd = +5 V Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 698 - 960 550 - 1200 698 - 960 550 - 1200 MHz
Gain 13 16 11 15 13.5 16 11.5 16 dB
Gain Variation Over Temperature 0.003 0.003 0.005 0.005 dB/ °C
Noise Figure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 dB
Input Return Loss 28 22 22 17 dB
Output Return Loss 12 14 12 15 dB
Output Power for 1 dB
Compression (P1dB) 14 16 12.5 16.5 18.5 20.5 16.5 21 dBm
Saturated Output Power (Psat) 17 17.5 21 21.5 dBm
Output Third Order Intercept (IP3) 31 30 37 37 dBm
Supply Current (Idd) 24 34 44 24 34 44 65 95 124 65 95 124 mA
* Rbias resistor sets current, see application circuit herein
Electrical Specications, TA = +25° C,
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
[1] Vdd = 5V [2] Vdd = 3V
Gain vs. Temperature [2]
Gain vs. Temperature [1]
Reverse Isolation vs. Temperature [1]
-35
-25
-15
-5
5
15
25
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Vdd= 5V
Vdd= 3V
RESPONSE (dB)
FREQUENCY (GHz)
S21
S22
S11
10
12
14
16
18
20
22
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
P1dB vs. Temperature
Psat vs. Temperature
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 700 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
0
0.2
0.4
0.6
0.8
1
1.2
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
Vdd= 5V
Vdd= 3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
10
12
14
16
18
20
22
24
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
10
12
14
16
18
20
22
24
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
20
24
28
32
36
40
44
48
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
26
28
30
32
34
36
38
40
0
30
60
90
120
150
180
210
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
26
28
30
32
34
36
38
40
0
30
60
90
120
150
180
210
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 700 MHz [2]
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Power Compression @ 900 MHz [2]
Power Compression @ 700 MHz [1] Power Compression @ 900 MHz [1]
[1] Vdd = 5V [2] Vdd = 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
-10
0
10
20
30
40
50
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
40
50
60
-16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
40
50
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
40
50
60
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Drain Bias Voltage (Vdd) +6V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 16.67 mW/°C above 85 °C) 1.08 W
Thermal Resistance
(channel to ground paddle) 60 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (V) Idd (mA)
2.7 24
3.0 34
3.3 44
4.5 82
5.0 95
5.5 105
Note: Amplier will operate over full voltage ranges shown above.
[1] Vdd = 5V [2] Vdd = 3V
Cross Channel Isolation [1] Magnitude Balance [1]
Phase Balance [1]
-40
-30
-20
-10
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
ISOLATION (dB)
FREQUENCY (GHz)
-1
-0.5
0
0.5
1
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
AMPLITUDE BALANCE (dB)
FREQUENCY (GHz)
-2
-1
0
1
2
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
PHASE BALANCE (degrees)
FREQUENCY (GHz)
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V) Rbias Ω Idd (mA)
Min Max Recommended
3V 10k Open
circuit 10k 34
5V 0 Open
circuit
820 58
2k 78
10k 95
With Vdd = 3V Rbias <10k is not recommended and may result in
LNA becoming conditionally unstable.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC817LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H817
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 6 RFIN1, RFIN2 These pins are matched to 50 Ohms.
2, 5, 7, 12,
14, 17, 19, 24 GND These pins and package bottom must be
connected to RF/DC Ground.
3, 4, 8 - 10,
21 - 23 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
Application Circuit
Pin Descriptions (Continued)
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Pin Number Function Description Interface Schematic
11, 20 Vdd1,
Vdd2
Power supply voltages for each amplier. Choke inductor and
bypass capacitors are required. See application circuit.
13, 18 RFOUT1,
RFOUT2 These pins are matched to 50 Ohms.
15, 16 RES1,
RES2
These pins are used to set the DC current of each amplier
via external biasing resistor. See application circuit.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
Evaluation PCB
Item Description
J1 - J4 PCB Mount SMA RF Connector
J5, J6 2mm Vertical Molex 8 pos Connector
C5, C6 1000 pF Capacitor, 0603 Pkg.
C9, C10 0.47 µF Capacitor, 0603 Pkg..
C11, C12 10 kpF Capacitor, 0402 Pkg.
R1 - R4 0 Ohm Resistor, 0402 Pkg.
R5, R6 (Rbias 1, 2) 10K Resistor, 0402 Pkg.
L1, L2 15 nH Inductor, 0402 Pkg.
L5, L6 18 nH Inductor, 0603 Pkg.
U1 HMC817LP4E Amplier
PCB [2] 122725 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Materials for Evaluation PCB 123193 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D