APTDF100H60G
APTDF100H60G – Rev 1 June, 2006
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+-AC1
AC2
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
TC = 25°C 135
IF(A V) Maximum Average Forward
Current Duty cycle = 50% TC = 80°C 100
IF(RMS) RMS Forward Current Duty cycle = 50% TC = 45°C 135
IFSM Non-Repetitive Forward Surge Current 8.3ms TC = 45°C 500
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
AC1
+
AC2
-
VRRM = 600V
IC = 100A @ Tc = 80°C
Applicatio
n
• Uninterruptible Power Supply (UPS)
• Ind uctio n heati ng
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq ue ncy
operation
• Low losses
• Low noise switching
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Diode Full Bridge
Power Module
APTDF100H60G
APTDF100H60G – Rev 1 June, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 100A 1.6 2.0
IF = 200A 2.0 VF Diode Forward Voltage
IF = 100A Tj = 125°C 1.3
V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA
CT Junction Capacitance VR = 600V 190 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
trr Reverse Recovery Time IF=1A,VR=30V
di/dt = 100A/µs Tj = 25°C 34 ns
Tj = 25°C 160
trr Reverse Recovery Time Tj = 125°C 220 ns
Tj = 25°C 290
Qrr Reverse Recovery Charge
Tj = 125°C 1530
nC
Tj = 25°C 5
IRRM Reverse Recovery Current
IF = 100A
VR = 400V
di/dt = 200A/µs
Tj = 125°C 13
A
trr Reverse Recovery Time 100 ns
Qrr Reverse Recovery Charge 2890 nC
IRRM Reverse Recovery Current
IF = 100A
VR = 400V
di/dt=1000A/µs
Tj = 125°C
44 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.55 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
APTDF100H60G
APTDF100H60G – Rev 1 June, 2006
www.microsemi
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com 3 - 4
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=-55°C
TJ=25°C
TJ=175°C
TJ=125°C
0
50
100
150
200
250
300
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, Anode to Cathode Voltage (V)
IF, Forward Current (A)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Char
g
e
50 A
100 A
200 A
0
10
20
30
40
50
60
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
50 A
100 A
200 A
50
100
150
200
250
300
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
trr, Reverse Recovery Time (ns)
TJ=125°C
VR=400V
QRR vs. Current Rate Charge
50 A
100 A
200 A
0
1
2
3
4
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
QRR, Reverse Recovery Charge (µC)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
200
400
600
800
1000
1200
1400
1 10 100 1000
VR, Reverse Voltage (V)
C, Capacitance (pF)
0
25
50
75
100
125
150
25 50 75 100 125 150 175
Case Temperature (°C)
IF(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
APTDF100H60G
APTDF100H60G – Rev 1 June, 2006
www.microsemi
.
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SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
M icros emi reserve s the rig ht to c ha nge , wi tho ut notice, the s pe cifications and i nfo rmatio n contained he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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