45 A
60 A
NEW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.41, .56 SERIES
Bulletin I27131 rev. C 09/97
1
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Parameters IRK.41 IRK.56 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS)
(*) 100 135 A
ITSM @ 50Hz 850 1310 A
IFSM @ 60Hz 890 1370 A
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2√t 36.1 85.0 KA2√s
VRRM
range 400 to 1600 V
TSTG - 40 to 125 o
C
TJ- 40 to125 o
C
(*) As AC switch.
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
45 60 A
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
IRK.41, .56 Series
2
Bulletin I27131 rev. C 09/97
www.irf.com
IT(AV) Max. average on-state
current (Thyristors) 45 60 180o conduction, half sine wave,
IF(AV) Maximum average 45 60 TC = 85oC
forward current (Diodes)
IO(RMS)Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle 850 1310 t=10ms No voltage
or non-repetitive on-state 890 1370 t=8.3ms reapplied
IFSM or forward current 715 1100 t=10ms 100% VRRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms TJ = 25oC,
985 1520 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% VRRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms TJ = 25oC,
4.03 9.60 t=8.3ms no voltage reapplied
I2√t Max. I 2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 High level (4)
rtMax. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 High level (4)
VTM Max. peak on-state or ITM = π x I T(AV) TJ = 25oC
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on ITM =π x IT(AV), Ig
= 500mA,
current tr < 0.5 µs, tp > 6 µs
TJ = 25 oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
TJ = TJ max
TJ = TJ max
Parameters IRK.41 IRK.56 Units Conditions
100 135
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
On-state Conduction
IHMax. holding current 20 0
Initial TJ = TJ max.
150 A/µs
A
KA2s
V
mΩ
1.81 1.54 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive I RRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = TJ max.
IRK.41, .56 Series
3
Bulletin I27131 rev. C 09/97
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TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V /µs, to complete code add S90 i.e. IRKT41/16 S90.
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T J = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
15 mA TJ = 125 oC, gate open circuit
500 V/µs
Blocking
VINS RMS isolation voltage V
Triggering
PGM Max. peak gate power 10 10
PG(AV) Max. average gate power 2.5 2.5
IGM Max. peak gate current 2.5 2.5 A
-VGM Max. peak negative
gate voltage
4.0 TJ = - 40°C
2.5 TJ = 25°C
1.7 TJ = 125°C
270 TJ = - 40°C
150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Parameters IRK.41 IRK.56 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
VGT Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
IGT Max. gate current
required to trigger
W
V
10
TJ = 125oC,
rated V DRM applied
TJ = 125oC,
rated V DRM applied
Parameters IRK.41 IRK.56 Units Conditions
IRK.41, .56 Series
4
Bulletin I27131 rev. C 09/97
www.irf.com
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W
Outlines Table
IRKT../.. (*)
IRKL../.. (*)
IRKH../.. (*)
(*) For terminals connections, see Circuit configurations Table
All dimensions in millimeters (inches)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.0 2)
6 . 1 ± 0.3
(0. 24 ± 0.01) 24 ± 0 .5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1. 18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0.0 3)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
5.8 ± 0.25
(0.16 ± 0.01)
4
Pit ch 4. 0 ± 0. 2
(0.23 ± 0. 01)
(0.25 ± 0.01)
6.3 ± 0.3
576
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0 .02)
(0.79 ± 0.02)
1
30 ± 0 .5
(1. 18 ± 0.02)
29 ± 0.5
(1 .13 ± 0.0 2)
6.1 ± 0.3
(0. 24 ± 0.01) 24 ± 0. 5
18 REF.
(0.71) 15.5 ± 0. 5
(0. 61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston t ab. 2.8 x 0. 8
20. 5 ± 0. 75
(0.8 1 ± 0.03)
15 ± 0 .5
(0.59 ± 0.02)
20 ± 0.5
(0. 79 ± 0.02)
(0.16 ± 0. 01)
4
P it c h 4.0 ± 0.2
(0.25 ± 0. 01)
6. 3 ± 0. 3
5
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0. 02)
92 ± 0.5
20 ± 0 .5
Screws M5 x 0.8
( 0 . 1 1 x 0. 0 3)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
30 ± 0.5
( 1.1 8 ± 0.02 )
29 ± 0.5
(1.13 ± 0. 02)
6. 1 ± 0. 3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.0 4)
Faston tab. 2.8 x 0.8
20. 5 ± 0. 75
(0.81 ± 0. 03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.16 ± 0. 01)
Pitch 4.0 ± 0.2
(0.25 ± 0.01)
6.3 ± 0.3
76
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.41, .56 Series
5
Bulletin I27131 rev. C 09/97
www.irf.com
IRK T 56 / 16 S90
Device Code
1 2 34
5
1- Module type
2- Circuit configuration (See Circuit Configuration table)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
* * Available with no auxiliary cathode.
To specify change: 41 to 42
56 to 57
e.g. : IRKT57/16 etc.
Ordering Information Table
IRK.57 types
With no auxiliary cathode
Circuit Configurations Table
IRKT IRKH IRKL
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
6
4
13.8 (0.53)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 102030405
0
Maxim um Allowable Case Temperature (°C
)
30°60° 90° 120° 180°
A verage On-st ate Current (A)
Con du c t ion Angl e
IRK. 41.. Series
R (DC) = 0 .46 K/W
thJC
80
90
100
110
120
130
0 2040608
0
DC
30°60° 90° 120° 180°
Ave rage On-state Current (A )
M a xi mu m A l l ow a ble C a s e T emp era tu r e ( °C
)
Conduction Period
IR K.41. . S eries
R (DC) = 0 .46 K/W
thJC
IRK.41, .56 Series
6
Bulletin I27131 rev. C 09/97
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Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
0 2040608
0
DC
180°
120°
90°
60°
30° RMS Limit
Cond u ct ion P eriod
Max imum Average On-state Power Loss (W
)
Average On -state Curren t (A)
IRK.41.. Series
Pe r Jun ctio n
T = 125° C
J
0
10
20
30
40
50
60
70
0 10203040
50
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
Max imum Averag e On-state Power Loss (W
)
Average On-state Current (A)
IRK.41.. Series
Per Junctio n
T = 125°C
J
300
400
500
600
700
800
110100
Number Of E qual Amp litud e Hal f Cycl e Curren t Puls es (N
)
At Any R at ed L oad Co n dition And With
Rat ed V Appli ed F ollowing S urge .
RRM
Pea k H a l f Si n e Wav e O n-s ta te C u rre n t (A)
Initia l T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.4 1.. Series
Per J unction
300
400
500
600
700
800
900
0.01 0.1
1
Pul se Train Du ration (s)
Maxi mum No n Repet itive Surge Curren
t
Versus Pulse Trai n Duration. Co ntro
l
Initial T = 125°C
No Volt age Reap plie d
Rate d V Reapplie d
RRM
J
Of Conduction May No t Be Maintaine d
.
Pe ak Half Sine Wave O n-state Current (A
)
IR K.41.. Ser ies
Per Junct ion
0 20 40 60 80 100 120 140
Maxim um Allowable Ambient Temperature (°C
)
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
5 K/W
thSA
0
20
40
60
80
100
120
140
020
40
60
80
100
180°
120°
90°
60°
30°
To tal R MS Ou tp ut Cu r r en t (A)
Maxim u m Tota l On -s ta te Powe r Lo s s (W)
Condu ction Angle
IRK .41.. Seri es
Per Module
T = 125°C
J
IRK.41, .56 Series
7
Bulletin I27131 rev. C 09/97
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Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
0 20 40 60 80 100 120 140
Maxi mum Allowable Ambient Temperature (°C
)
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 20406080100
Total Output Current (A)
Max imum T otal Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x I R K. 4 1 . . S erie s
Single Ph as e Bridg e
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maxim um Al lowable Ambi ent Te mper ature (°C
)
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140
To ta l Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IR K.41.. Series
Three Phase Bridge
Connected
T = 125° C
J
70
80
90
100
110
120
130
0 1020304050607
0
Maxim um Allowable Case Temperature (°C
)
30°60° 90° 120° 180°
Average On-state Current (A)
Con duc t ion An gle
IR K.56.. Ser ie s
R (DC) = 0 .40 K/W
thJC
70
80
90
100
110
120
130
0 2040608010
0
DC
30°60°
90°
120° 180°
Average On-state Curre nt (A)
Maximum Allowable Case T emperature (°C
)
Conduction Period
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
IRK.41, .56 Series
8
Bulletin I27131 rev. C 09/97
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Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
Fig. 16 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0 2040608010
0
DC
180°
120°
90°
60°
30°
RMS Limi t
Con duction Period
Ma x imum A v er ag e On-s tate P ow er L oss (W
)
Average On-state Current (A)
IR K. 5 6 .. Ser i es
Pe r Jun cti on
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
0 1020304050
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Ma xi mum A ve rage On-s tate Powe r Loss (W
Average On-state Current (A)
IR K.56.. S er ies
Per Junction
T = 125°C
J
500
600
700
800
900
1000
1100
1200
110100
Nu mber Of Equa l Am p litud e H alf Cycle Cu rren t Puls es ( N
)
I nitia l T = 1 2 5°C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM J
Peak Half S ine Wave On- state Current (A
)
IRK.5 6.. Series
Per J unction
400
600
800
1000
1200
1400
0.01 0.1
1
Pea k Hal f Sine Wav e On-s t ate Curre nt (A
)
Pul se Train Du ration (s)
Maximum Non Repetitive Surge Curren
t
V ersus Puls e Train Du ration. Contro
l
Initial T = 125°C
No V olt a ge R e applie d
Rated V Reapplied
Of Conduction May Not Be Maintained
.
J
RRM
IR K.56.. Ser ies
Per Junct ion
0 20 40 60 80 100 120 140
Maximum Al lowable Am bient Temperature (°C
)
4 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.4 K/W
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140
180°
120°
90°
60°
30°
T otal RMS Outp ut Cu r ren t (A)
M ax im u m Total O n- st a te Power Los s ( W)
Cond uction Angle
IRK .56.. Seri es
Per Module
T = 125°C
J
IRK.41, .56 Series
9
Bulletin I27131 rev. C 09/97
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Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
M axi mu m All owa bl e Ambi ent Tem per at ur e (°C
)
2 K/W
1 K/W
R = 0.1 K/W - Delta R
thSA
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140
Total Output Curr ent ( A )
Max imum Total Po we r Loss (W)
180°
(Sine)
180°
(Rect)
2 x IR K.56.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20406080100120140
Maximum A llowable Ambient T e mperature (°C
)
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160 180
Total Output Current (A )
Maximum T otal Power Loss (W)
120°
(Rect)
3 x IR K.56.. Ser ies
Three Ph ase Bridge
Connected
T = 125°C
J
1
10
100
1000
0.511.522.533.544
.5
T = 2 5°C
J
I n sta nta n eous On -s ta te Curre nt ( A)
Instantane ous On-st ate Voltag e ( V)
T = 125°C
J
IRK.56.. Series
Per Junction
1
10
100
1000
0123456
7
T = 2 5 °C
J
Instantaneous On-state Current (A)
Instantaneous On -st a te Voltage (V)
T = 125°C
J
IRK.41.. Series
Pe r Jun ction
IRK.41, .56 Series
10
Bulletin I27131 rev. C 09/97
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Fig. 23 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
Fig. 24 - Gate Characteristics
30
40
50
60
70
80
90
100
110
10 20 30 40 50 60 70 80 90 10
Maximum Reve rse Re covery Current - I rr (A
Rate Of Fall Of F orward Curr e nt - di/dt (A/µ
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK. 41.. Series
IRK. 56.. Series
T = 125 °C
J
100
150
200
250
300
350
400
450
500
10 20 30 40 50 60 70 80 90 10
0
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µ
s)
M aximum Reverse Recovery Charge - Qrr (µC
)
I = 200 A
TM
20 A
10 A
IR K.4 1 .. Ser i es
IR K.5 6 .. Ser i es
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 1
0
Sq uare Wave Pu lse D ur at ion (s)
thJC
Transie nt Thermal Impeda nce Z (K/W
)
Pe r Ju ncti on
Stead y Sta te Valu e:
R = 0.46 K/W
R = 0.40 K/W
(DC Operat ion) IR K.41.. Ser ie s
IR K.56.. Ser ie s
thJC
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 100
0
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1 ) PGM = 100 W, tp = 500 µs
(2) PG M = 50 W , t p = 1 ms
(3) PG M = 20 W , t p = 25 ms
(4) PG M = 10 W , t p = 5 ms
I nstantaneous Gate Curre nt (A)
I nst anta ne o us Gat e Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD IGD Frequ en cy L imited by P G( AV )
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs , tp >= 6 µs
IRK.41 .. /. 56. . Se r ies