For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
1
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Functional Diagram
Features
Typical Applications
General Description
The HMC442 is an efficient GaAs PHEMT MMIC
Medium Power Amplier which operates between
17.5 and 25.5 GHz. The HMC442 provides 15 dB of
gain, +23 dBm of saturated power and 25% PAE from
a +5V supply voltage. The amplier chip can easily be
integrated into Multi-Chip-Modules (MCMs) due to its
small size. All data is tested with the chip in a 50 Ohm
test xture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Saturated Power: +23 dBm @ 25% PAE
Gain: 15 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 1.03 x 1.13 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd = 5V, Idd = 85mA*
The HMC442 is ideal for use as a medium power
amplier for:
• Point-to-Point and Point-to-Multi-Point Radios
• VSAT
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 17.5 - 21.0 21.0 - 24.0 24.0 - 25.5 GHz
Gain 12 14.5 12 15 13.5 16 dB
Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C
Input Return Loss 15 13 10 dB
Output Return Loss 10 10 10 dB
Output Power for 1 dB Compression (P1dB) 18 21 18.5 21.5 19 22 dBm
Saturated Output Power (Psat) 20 23 20 23 20 23.5 dBm
Output Third Order Intercept (IP3) 29 28 27 dBm
Noise Figure 6.5 5.5 6dB
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 85 110 85 110 85 110 mA
* Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
2
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-30
-20
-10
0
10
20
14 17 20 23 26 29
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
14
18
22
26
30
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
P1dB (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
Psat (dBm)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
3
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Power Compression @ 21 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Power Compression @ 25 GHz
Gain & Power vs. Supply Voltage @ 25 GHz
0
4
8
12
16
20
24
28
-10 -6 -2 2 6 10 14
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
-10 -6 -2 2 6 10 14
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
18
22
26
30
34
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
IP3 (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
16 17 18 19 20 21 22 23 24 25 26
+25 C +85 C -55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain P1dB Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd Supply Voltage (Vdc)
-60
-50
-40
-30
-20
-10
0
16 17 18 19 20 21 22 23 24 25 26 27
+25 C +85 C -55 C
ISOLATION (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
4
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc
Gate Bias Voltage (Vgg) -4 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 7.1 mW/°C above 85 °C) 0.64 W
Thermal Resistance
(channel to die bottom) 141 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown above
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Vdd (Vdc) Idd (mA)
+4.5 82
+5.0 85
+5.5 89
+2.7 79
+3.0 83
+3.3 86
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
5
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Assembly Diagram
Pad Descriptions
Pad Number Function Description Pin Schematic
1Vgg
Gate control for amplier. Adjust to achieve Id of 85mA.
Please follow “MMIC Amplier Biasing Procedure”
Application Note.
2RFIN This pad is AC coupled
and matched to 50 Ohms
3Vdd
Power Supply Voltage for the amplier. External
bypass
capacitors of 100 pF and 0.01 µF are required.
4RFOUT This pad is AC coupled
and matched to 50 Ohms.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - CHIP
6
HMC442
v04.0913
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIERS, 17.5 - 25.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
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HMC442-SX