© 2008 IXYS CORPORATION, All rights reserved
Trench Gate HiperFET
N-Channel Power MOSFET
Phase Leg Topology
DS100048(09/08)
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
CP Coupling capacitance between shorted 40 pF
pins and mounting tab in the case
dS ,dA pin - pin 1.7 mm
dS ,dA pin - backside metal 5.5 mm
Weight 9 g
FMM60-02TF
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 200 V
VGSM Transient ± 30 V
ID25 TC= 25°C 33 A
IDM TC= 25°C, pulse width limited by TJM 150 A
IATC= 25°C 5 A
EAS TC= 25°C 1 J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 10 V/ns
PD TC= 25°C 125 W
Advance Technical Information
Symbol Test Conditions Maximum Ratings
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V
TL 1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
FC Mounting force 20..120 / 4.5..27 N/lb.
VDSS = 200V
ID25 = 33A
RDS(on) ≤≤
≤≤
≤ 40mΩΩ
ΩΩ
Ω
trr(typ) = 82ns
Features
zSilicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
zAvalanche rated
zLow QG
zLow Drain-to-Tab capacitance
zLow package inductance
Advantages
zLow gate drive requirement
zHigh power density
zFast intrinsic rectifier
zLow drain to ground capacitance
zFast switching
Applications
zDC and AC motor drives
zUPS, solar and wind power inverters
zSynchronous rectifiers
zMulti-phase DC to DC converters
zIndustrial battery chargers
zSwitching power supplies
T2
3
5
4
1
2
T1
3
5
4
1
2ISOPLUS i4-PakTM
1
5
Isolated Tab
IXYS reserves the right to change limits, test conditions, and dimensions.
FMM60-02TF
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions2 Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 200 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±20 V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 30A, Note 1 32 40 mΩ
gfs VDS = 10V, ID = 60A, Note 1 40 62 S
Ciss 3700 pF
Coss VGS = 0V, VDS = 25 V, f = 1 MHz 520 pF
Crss 37 pF
td(on) Resistive Switching Times 39 ns
trVGS = 10V, VDS = 0.5 z VDSS, ID = 30A 46 ns
td(off) RG = 5Ω (External) 75 ns
tf 42 ns
Qg(on) 90 nC
Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 30A 33 nC
Qgd 21 nC
RthJC 1.0 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions3Min. Typ. Max.
ISVGS = 0V 33 A
ISM Repetitive, pulse width limited by TJM 150 A
VSD IF = 60A, VGS = 0V, Note 1 1.5 V
trr 82 ns
IRM 15.3 A
QRM 0.63 μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
