2MBI150UA-120 1200V / 150A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector current IC
ICp
-IC
-IC pulse
Collector Power Dissipation PC
Junction temperature Tj
Storage temperature Tstg
Isolation voltage between terminal and copper base *1 Viso
Screw Torque Mounting *2
Terminals *2
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
3.5
Unit
V
V
A
W
°C
VAC
N·m
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
– – 2.0
– – 200
4.5 6.5 8.5
– 1.95 2.30
– 2.20 –
– 1.75 2.10
– 2.00 –
– 17 –
– 0.36 1.20
– 0.21 0.60
– 0.03 –
– 0.37 1.00
– 0.07 0.30
– 1.80 2.10
– 1.90 –
– 1.60 1.90
– 1.70 –
– – 0.35
– 1.39 –
VGE=0V, VCE=1200V
VCE=0V, V GE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=150A
VGE=±15V
RG=2.2 Ω
VGE=0V
IF=150A
IF=150A
mA
nA
V
V
nF
µs
V
µs
mΩ
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance
Contact Thermal resistance
– – 0.17
– – 0.28
– 0.05 –
IGBT
FWD
With thermal compound
°C/W
°C/W
°C/W
Equivalent Circuit Schematic
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : Mounting2.5 to 3.5 N·m(M5)
Symbols C on ditions Characteristics Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT Module U-Series
Conditions
Continuous
1ms
1 device
AC:1min.
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
C1
G1 E1 G2 E2
C2E1
E2
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*3 :Biggest internal terminal resistance among arm.
Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
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2MBI150UA-120 IGBT Module
Characteristics (Representative)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ .)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ .)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ .)
VGE=15V / chip Tj=25°C / chip
VGE=0V, f= 1M Hz , T j= 25°C Vcc=600V, Ic=150A, T j= 25°C
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
VGE=2 0 V 1 5V 12V
10V
8V
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
VGE=2 0 V 1 5 V 12V
10V
8V
0
100
200
300
400
0 1 2 3 4 5
Collector current : Ic [A]
Collect or-Emit t er volt age : VCE [V]
Tj=125°CTj=25°C
0
2
4
6
8
10
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gat e - Em it t e r v olt age : VGE [ V ]
Ic=300A
Ic=150A
Ic=75A
0.1
1.0
10.0
100.0
0 10 20 30
Capacitance : Cies, Coes, Cres [ nF ]
Collect or-Emit t er volt age : VCE [V]
Cies
Coes
Cres
0 150 300 450 600 750 900
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
Gat e ch ar ge : Qg [ nC ]
VGE
VCE
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2MBI150UA-120 IGBT Module
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj=125°C
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <=125°C
10
100
1000
10000
0 50 100 150 200 250 300
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0 50 100 150 200 250 300
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
0.1 1.0 10.0 100.0
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
5
10
15
20
25
30
0 50 100 150 200 250 300
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
0.1 1.0 10.0 100.0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
100
200
300
400
0 400 800 1200
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
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2MBI150UA-120 IGBT Module
Outline Drawings, mm
M232
Transient thermal resistance (max.)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω
Forward current vs. Forward on voltage (typ.)
chip
0
100
200
300
400
0 1 2 3 4
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125°C
Tj=25°C
10
100
1000
0 50 100 150 200 250 300
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
trr (125°C)
Irr (125°C)
Irr (25°C)
trr (25°C)
0.001
0.010
0.100
1.000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
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