POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Three Phase PSDT 110 IdAV = 110A
Full Controlled Bridges V
RRM = 400-1600 V
Preliminary Data Sheet
VRSM
VDSM
VRRM
VDRM
Type
500 400 PSDT 110/04
900 800 PSDT 110/08
1300 1200 PSDT 110/12
1500 1400 PSDT 110/14
*1700 *1600 PSDT 110/16
* Delivery on request
Symbol Test Conditions Maximum Ratings
IdAV TC = 85 °C per module 110 A
ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 1150 A
VR = 0 t = 8.3 ms (60 Hz), sine 1230 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1070 A
∫ i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 6600 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 6280 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 4750 A2 s
(di/dt)cr TVJ = TJVM repetitive, IT = 50 A 150 A/µs
f = 400Hz, tP = 200µs
VD = 2/3 VDRM
IG = 0.3 A non repetitive, IT = 1/3 . IdAV 500 A/µs
diG/dt = 0.3 A/µs
(dv/dt)cr TVJ = TVJM V
DR = 2/3 VDRM 1000
V/µs
RGK = ∞, method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30µs ≤ 10 W
IT = ITAVM tP = 500µs ≤ 5 W
PGAVM ≤ 0.5 W
VRGM 10 V
TVJ -40 ... + 125 °C
TVJM 125 °C
Tstg -40 ... + 125 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V ∼
IISOL ≤ 1 mA t = 1 s 3000 V ∼
Md Mounting torque (M6) 5 Nm
Terminal connection torque (M6) 5 Nm
Weight typ. 270 g
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL registered, E 148688
Applications
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Motor control
• Power converter
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
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~
~
http://store.iiic.cc/
PSDT 110
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Symbol Test Conditions Characteristic Value
ID, IR TVJ = TVJM, VR = VRRM, VD = VDRM ≤ 5 mA
VT IT = 200A, TVJ = 25°C ≤ 1.75 V
VTO For power-loss calculations only (TVJ = TVJM) 0.85 V
rT 6
mΩ
VGT VD = 6V TVJ = 25°C ≤ 1.5 V
T
VJ = -40°C ≤ 1.6 V
IGT VD = 6V TVJ = 25°C ≤ 100 mA
T
VJ = -40°C ≤ 200 mA
VGD TVJ = TVJM V
D = 2/3 VDRM ≤ 0.2 V
IGD TVJ = TVJM V
D = 2/3 VDRM ≤ 5 mA
IL TVJ = 25°C, tP = 30µs ≤ 450 mA
IG = 0.3A, diG/dt = 0.3A/µs
IH TVJ = 25°C, VD = 6V, RGK = ∞ ≤ 200 mA
tgd TVJ = 25°C, VD = ½ VDRM ≤ 2 µs
IG = 0.3A, diG/dt = 0.3A/µs
tq TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V 150 µs
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
RthJC per thyristor; sine 180°el 0.65 K/W
per module 0.108 K/W
RthJK per thyristor; sine 180° el 0.8 K/W
per module 0.133 K/W
dS Creeping distance on surface 10.0 mm
dA Creeping distance in air 9.4 mm
a Max. allowable acceleration 50 m/s2
0.5 1 1.5 2
0
50
100
150
200
250
300
V [V]
F
I
F
[A]
1:T = 125°
VJ
2:T = 25°
VJ
C
C
12
100
1
10
100
I [mA]
G
10 1000
t
gd
us
T =25°C
VJ
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
TSM
TVJ=45°C TVJ=150°C
1150 1000
I
------
I
TSM
T(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time Fig. 3 Surge overload current
per diode (or thyristor) IFSM,
ITSM: Crest value t: duration
http://store.iiic.cc/
PSDT 110
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
0.1
1
10
10 10 10 10 10
01234
mA
V
VG
IG
1
23
4
5
6
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10W
Fig.4 Gate trigger characteristic
50 100 150 200
0
20
40
60
80
100
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
TAV
[A]
Fig.5 Maximum forward current
at case temperature
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
100
50
0
50
100
150
200
250
300
350
400 80
85
90
95
100
105
110
115
120
125
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.14
0.52
0.31
0.2
0.14 0.08 = RTHCA [K/W]
ITAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSDT 110
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