AP4434GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance D D Capable of 2.5V gate drive D D Surface mount package S S 20V RDS(ON) 18.5m ID G SO-8 BVDSS 8.3A S D Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V ID@TA=25 3 Continuous Drain Current ,VGS @ 4.5V 8.3 A ID@TA=70 Continuous Drain Current ,VGS @ 4.5V 6.7 A 30 A 3 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 /W 200607072-1/4 AP4434GM o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.01 - V/ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=8A - - 18.5 m VGS=2.5V, ID=4A - - 25 m 0.3 - 1 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=VGS, ID=250uA VDS=5V, ID=4A - 9 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=12V - - 100 nA ID=8A - 17 27 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 5.8 - nC 2 td(on) Turn-on Delay Time VDS=10V - 9 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 26 - ns tf Fall Time RD=10 - 7.5 - ns Ciss Input Capacitance VGS=0V - 940 1500 pF Coss Output Capacitance VDS=20V - 175 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Min. Typ. Max. Units - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=2.1A, VGS=0V 2 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V, - 23 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP4434GM 30 30 T A = 150 C V G =2.0V 20 5.0V 4.5 V 3.5 V 2.5 V 25 ID , Drain Current (A) 25 ID , Drain Current (A) o 5.0V 4.5 V 3.5 V 2.5 V o T A =25 C 15 10 5 V G = 2.0 V 20 15 10 5 0 0 0 1 2 0 3 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 26 ID=4A I D =8A V G = 4.5V T A =25 o C 1.4 Normalized RDS(ON) RDS(ON) (m) 22 18 14 1.2 1.0 0.8 10 0.6 0 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature 1.4 8 1.2 T j =150 o C Normalized VGS(th) (V) IS(A) 6 T j =25 o C 4 1.0 0.8 2 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4434GM f=1.0MHz 10000 ID=8A 12 V DS = 10 V V DS = 12 V V DS =1 6 V C (pF) VGS , Gate to Source Voltage (V) 16 8 1000 C oss 4 C iss C rss 100 0 0 10 20 30 1 40 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 100us 10 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 1s 0.1 o T A =25 C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.01 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 o ID , Drain Current (A) V DS =5V o T j =25 C VG T j =150 C QG 20 5.0V QGS QGD 10 Charge Q 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D 8 7 Millimeters 6 5 E1 1 2 3 E 4 e SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 e B 1.27 TYP A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number XXXXGM YWWSSS Package Code meet Rohs requirement Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence