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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSBB15CH60C Motion SPM(R) 3 Series Features General Description * UL Certified No. E209204 (UL1557) FSBB15CH60C is an advanced Motion SPM(R) 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. * 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection * Low-Loss, Short-Circuit Rated IGBTs * Very Low Thermal Resistance Using Al2O3 DBC Substrate * Built-in Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout * Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing * Single-Grounded Power Supply * Isolation Rating: 2500 Vrms / min. Applications * Motion Control - Home Appliance / Industrial Motor Related Resources * AN-9044 - Motion SPM(R) 3 Series Users Guide Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBB15CH60C FSBB15CH60C SPMCC-027 Rail 10 (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 1 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series February 2016 FSBB15CH60C Motion SPM(R) 3 Series Integrated Power Functions * 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions * For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 12 and 13. * For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) * Fault signaling: corresponding to UVLO (low-side supply) and SC faults * Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 2 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Pin Descriptions Pin Number Pin Name Pin Description 1 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase 6 VFO 7 CFOD Capacitor for Fault Output Duration Selection 8 CSC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input Fault Output 9 IN(UH) Signal Input for High-Side U-Phase 10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) Signal Input for High-Side W-Phase 18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 3 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Internal Equivalent Circuit and Input/Output Pins P (27) (19) VB(W) VB (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (13) IN(VH) (16) VS(V) (11) VB(U) (9) IN(UH) (12) VS(U) (8) CSC VCC COM IN OUT VS VCC COM IN V (25) OUT VS C(FOD) (6) VFO U (24) NW (23) VFO (5) IN(WL) (2) COM W (26) C(SC) OUT(WL) (7) CFOD (1) VCC(L) VS VB (10) VCC(H) (3) IN(UL) OUT VB (14) VCC(H) (4) IN(VL) VCC COM IN IN(WL) OUT(VL) IN(VL) NV (22) IN(UL) COM VCC OUT(UL) VSL NU (21) Figure 3. Internal Block Diagram 1st Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 4 www.fairchildsemi.com unless otherwise specified.) Inverter Part Symbol VPN VPN(Surge) Parameter Conditions Rating Unit Supply Voltage Applied between P - NU, NV, NW 450 V Supply Voltage (Surge) Applied between P - NU, NV, NW 500 V 600 V IC Each IGBT Collector Current TC = 25C, TJ 150C 15 A ICP Each IGBT Collector Current (Peak) TC = 25C, TJ 150C, Under 1 ms Pulse Width 30 A PC Collector Dissipation TC = 25C per Chip TJ Operating Junction Temperature (2nd Note 1) VCES Collector - Emitter Voltage 55 W - 40 ~ 150 C 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM(R) 3 product is 150 C (at TC 125C). Control Part Symbol Rating Unit VCC Control Supply Voltage Parameter Applied between VCC(H), VCC(L) - COM Conditions 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC + 0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin 5 mA VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V Rating Unit Bootstrap Diode Part Symbol VRRM Parameter Conditions 600 V IF Maximum Repetitive Reverse Voltage Forward Current TC = 25C, TJ 150C 0.5 A IFP Forward Current (Peak) TC = 25C, TJ 150C Under 1 ms Pulse Width 2.0 A TJ Operating Junction Temperature -40 ~ 150 C Rating Unit Total System Symbol Parameter Conditions VPN(PROT) Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V TJ = 150C, Non-Repetitive, < 2 s 400 V TC Module Case Operation Temperature -40C TJ 150C, See Figure 2 -40 ~ 125 C -40 ~ 125 C 2500 Vrms TSTG Storage Temperature VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate Thermal Resistance Symbol Rth(j-c)Q Parameter Junction to Case Thermal Resistance Rth(j-c)F Conditions Min. Typ. Max. Unit Inverter IGBT part (per 1 / 6 module) - - 2.27 C / W Inverter FWDi part (per 1 / 6 module) - - 3.0 C / W 2nd Notes: 2. For the measurement point of case temperature (TC), please refer to Figure 2. (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 5 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Absolute Maximum Ratings (TJ = 25C, Inverter Part Symbol VCE(SAT) Parameter Conditions Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 15 A, TJ = 25C FWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25C Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 15 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) Min. Typ. Max. Unit - - 2.0 V - - 2.2 V - 0.80 - s - 0.20 - s - 0.40 - s tC(OFF) - 0.10 - s trr - 0.10 - s - 0.50 - s - 0.25 - s - 0.35 - s - 0.10 - s - 0.10 - s - - 1 mA VF HS tON tC(ON) tOFF LS VPN = 300 V, VCC = VBS = 15 V IC = 15 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) tON tC(ON) tOFF tC(OFF) trr Collector - Emitter Leakage VCE = VCES Current ICES 2nd Notes: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol IQCCL Parameter Quiescent VCC Supply Current IQCCH IQBS Quiescent VBS Supply Current VFOH Fault Output Voltage VFOL VSC(ref) Conditions Min. Typ. Max. Unit VCC = 15 V IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA VCC = 15 V IN(UH, VH, WH) = 0 V VCC(H) - COM - - 600 A VBS = 15 V IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 500 A VSC = 0 V, VFO Circuit: 4.7 kto 5 V Pull-up 4.5 - - V VSC = 1 V, VFO Circuit: 4.7 kto 5 V Pull-up - - 0.8 V 0.45 0.50 0.55 V Short-Circuit Current Trip Level VCC = 15 V (2nd Note 4) TSD Over-Temperature Protection Temperature at LVIC - 160 - C TSD Over-Temperature Protection Hysterisis Temperature at LVIC - 5 - C UVCCD UVCCR Supply Circuit Under-Voltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.4 V UVBSD Detection Level UVBSR Reset Level 10 11 12 V 10.5 11.5 12.5 V tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage 2.8 - - V VIN(OFF) OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM - - 0.8 V 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F] (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 6 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) FSBB15CH60C Motion SPM(R) 3 Series 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT 500 VCE=300V 700 VCC=15V VIN=5V TJ=25 600 TJ=150 SWITCHING LOSS, ESW(OFF) [uJ] SWITCHING LOSS, ESW(ON) [uJ] 800 500 400 300 200 100 0 0 2 4 6 8 10 12 14 VCE=300V 450 V =15V CC VIN=5V 400 TJ=25 350 TJ=150 300 250 200 150 100 50 0 16 COLLECTOR CURRENT, Ic [AMPERES] 0 2 4 6 8 10 12 14 16 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics (Typical) (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 7 www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25C - 2.5 - V trr Reverse Recovery Time IF = 0.1 A, TC = 25C - 80 - ns Built-in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 0.6 IF [A] 0.5 0.4 0.3 0.2 0.1 0.0 o TC=25 C 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Figure 6. Built-in Bootstrap Diode Characteristics 2nd Notes: 6. Built-in bootstrap diode includes around 15 resistance characteristic. Recommended Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Unit - 300 400 V VPN Supply Voltage Applied between P - NU, NV, NW VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15.0 18.5 V -1 - 1 V / s 2 - - s - 20 kHz 4 V dVCC / dt, Control Supply Variation dVBS / dt tdead Blanking Time for Preventing Each Input Signal Arm-Short fPWM PWM Input Signal -40 C TC 125C, -40 C TJ 150C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -4 (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 8 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Bootstrap Diode Part Parameter Mounting Torque Conditions Mounting Screw: M3 Device Flatness Min. Typ. 0.51 0 - Recommended 0.62 N*m See Figure 7 Weight Max. Unit 0.62 0.80 N*m - +120 m 15.00 - g (+) (+) Figure 7. Flatness Measurement Position (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 9 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series Mechanical Characteristics and Ratings FSBB15CH60C Motion SPM(R) 3 Series Time Charts of Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 8. Under-Voltage Protection (Low-Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b1 UVBSD b5 b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under-voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-voltage reset (UVBSR). b6 : Normal operation: IGBT ON and carrying current. Figure 9. Under-Voltage Protection (High-Side) (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 10 www.fairchildsemi.com c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage c3 FSBB15CH60C Motion SPM(R) 3 Series Lower Arms Control Input c7 RESET c4 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short-circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "LOW": IGBT OFF state. c7 : Input "HIGH": IGBT ON state, but during the active period of fault output, the IGBT doesn't turn ON. c8 : IGBT OFF state. Figure 10. Short-Circuit Protection (Low-Side Operation Only) (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 11 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series +5 V SPM RPF = 4.7 100 IN(UH) , IN(VH) , IN(WH) 100 MCU IN (UL) , IN (VL) , IN(WL) 100 1 nF VFO CPF = 1 nF 1 nF 1 nF COM Figure 11. Recommended MCU I/O Interface Circuit 3rd Notes: 1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application's printed circuit board. The input signal section of the Motion SPM(R) 3 product integrates a 5 k (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input works with standard CMOS or LSTTL outputs. These values depend on PWM control algorithm. One-Leg Diagram of Motion SPM 3 Product P 0.1 F 15 V 22 F Vcc VB IN HO COM VS Inverter Output Vcc 1000 F 1 F IN OUT COM VSL N Figure 12. Recommended Bootstrap Operation Circuit and Parameters 3rd Notes: 3. The ceramic capacitor placed between VCC - COM should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 12 www.fairchildsemi.com (19) V B(W ) (18) V CC(H) RS C BS Gating WH C BSC (17) IN(WH) (20) V S(W ) C PS (15) V B(V) (14) V CC(H) RS C BS Gating VH C BSC (16) V S(V) C PS M C U (13) IN (VH) (11) V B(U) (10) V CC(H) RS C BS Gating UH C BSC (9) IN (UH) (12) V S(U) C PS P (27) VB VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) M VB VCC C DCS OUT COM IN VS Vdc U (24) RF R PF (8) CSC C SC (7) C FOD RS C FOD Fault Gating WL Gating VL Gating UL (6) V FO RS (5) IN(WL) RS (4) IN (VL) RS (3) IN(UL) C BPF C PS C PS C PS (2) COM C PF (1) V CC(L) C SP15 Input Signal for Short-Circuit Protection C(SC) OUT(WL) C(FOD) N W (23) R SW VFO IN(WL) OUT(VL) IN(VL) NV (22) R SV IN(UL) COM OUT(UL) VCC VSL N U (21) R SU C SPC15 R FW W-Phase Current V-Phase Current U-Phase Current R FV R FU C FW CFV C FU Figure 13. Typical Application Circuit 4th Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm). 2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM(R) 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance (please refer to Figure11). 4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 , CPS = 1 nF). 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 s. 9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended. 11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 12. CSPC15 should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2008 Fairchild Semiconductor Corporation FSBB15CH60C Rev. 1.6 13 www.fairchildsemi.com FSBB15CH60C Motion SPM(R) 3 Series +5 V +15 V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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