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DESCRIPTION
The
µ
PC3221GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem
systems. This IC consists of gain control amplifier and video amplifier.
The package is 8-pin SSOP suitable for surface mount.
This IC is manufactured using our 10 GHz fT NESAT II AL silicon bipolar process. This process uses silicon nitride
passivation film. This material can protect chip surface from external pollution and prevent corrosion/migration. Thus,
this IC has excellent performance, uniformity and reliability.
FEATURES
• Low distortion : IM3 = 56 dBc TYP. @ single-ended output, Vout = 0.7 Vp-p/tone
• Low noise figure : NF = 4.2 dB TYP.
• Wide AGC dynamic range : GCR = 50 dB TYP. @ input prescribe
• On-chip video amplifier : Vout = 1.0 Vp-p TYP. @ single-ended output
• Supply voltage : VCC = 5.0 V TYP.
• Packaged in 8-pin SSOP suitable for surface mounting
APPLICATION
• Digital CATV/Cable modem receivers
ORDERING INFORMATION
Part Number Package Supplying Form
µ
PC3221GV-E1 8-pin plastic SSOP (4.45 mm (175)) • Embossed tape 8 mm wide
• Pin 1 indicates pull-out direction of tape
• Qty 1 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PC3221GV
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC3221GV
Document No. PU10171EJ03V0DS (3rd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2004
INTERNAL BLOCK DIAGRAM AND PIN CONNECTIONS
1
2
3
4
8
7
6
5
VCC
INPUT1
INPUT2
VAGC
GND1
OUTPUT1
OUTPUT2
GND2
AGC AMP. Video AMP.
AGC Control
(Top View)
PRODUCT LINE-UP OF 5 V AGC AMPLIFIER
Part Number ICC
(mA) GMAX
(dB) GMIN
(dB) GCR
(dB) NF
(dB) IM3
(dBc) Note Package
µ
PC3217GV 23 53 0 53 6.5 50 8-pin SSOP (4.45 mm (175))
µ
PC3218GV 23 63 10 53 3.5 50
µ
PC3219GV 36.5 42.5 0 42.5 9.0 58
µ
PC3221GV 33 60 10 50 4.2 56
Note f
1 = 44 MHz, f2 = 45 MHz, Vout = 0.7 Vp-p/tone, single-ended output
Data Sheet PU10171EJ03V0DS
2
µ
PC3221GV
PIN EXPLANATIONS
Pin
No. Pin Name Applied
Voltage
(V)
Pin
Voltage
(V) Note Function and Application Internal Equivalent Circuit
1 VCC 4.5 to 5.5 − Power supply pin.
This pin should be externally equipped
with bypass capacitor to minimize
ground impedance.
2 INPUT1 − 1.29 Signal input pins to AGC amplifier.
This pin should be coupled with
capacitor for DC cut.
3 INPUT2 − 1.29
AGC
Control
1
2 35
4 VAGC 0 to VCC − Gain control pin.
This pin’s bias govern the AGC output
level.
Minimum Gain at VAGC : 0 to 0.5 V
Maximum Gain at VAGC : 3 to 3.5 V
Recommended to use AGC voltage with
externally resister (example: 1 kΩ).
AGC
Amp.
1
4
5
5 GND2 0 − Ground pin.
This pin should be connected to system
ground with minimum inductance.
Ground pattern on the board should be
formed as wide as possible.
6 OUTPUT2 − 2.28 Signal output pins of video amplifier.
This pin should be coupled with
capacitor for DC cut.
7 OUTPUT1 − 2.28
1
7
6
8
8 GND1 0 − Ground pin.
This pin should be connected to system
ground with minimum inductance.
Ground pattern on the board should be
formed as wide as possible.
All ground pins must be connected
together with wide ground pattern to
decrease impedance difference.
Note Pin voltage is measured at VCC = 5.0 V.
Data Sheet PU10171EJ03V0DS 3
µ
PC3221GV
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Ratings Unit
Supply Voltage VCC TA = +25°C 6.0 V
Gain Control Voltage Range VAGC TA = +25°C 0 to VCC V
Power Dissipation PD TA = +85°C Note 250 mW
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Operating Ambient Temperature TA VCC = 4.5 to 5.5 V −40 +25 +85 °C
Gain Control Voltage Range VAGC 0 − 3.5 V
Operating Frequency Range fBW 10 45 100 MHz
Data Sheet PU10171EJ03V0DS
4
µ
PC3221GV
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VCC = 5 V, f = 45 MHz, ZS = 50 Ω, ZL = 250 Ω, single-ended output)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Circuit Current ICC No input signal Note 1 26 33 41 mA
AGC Pin Current IAGC No input signal, VAGC = 3.5 V Note 1 − 16 50
µ
A
AGC Voltage High Level VAGC (H) @ Maximum gain Note 1 3.0 − 3.5 V
AGC Voltage Low Level VAGC (L) @ Minimum gain Note 1 0 − 0.5 V
RF Characteristics
Maximum Voltage Gain GMAX VAGC = 3.0 V, Pin = −60 dBm Note 1 57 60 63 dB
Middle Voltage Gain 1 GMID1 VAGC = 2.2 V, Pin = −60 dBm Note 1 47.5 50.5 53.5 dB
Middle Voltage Gain 2 GMID2 VAGC = 1.2 V, Pin = −30 dBm Note 1 18 21 24 dB
Minimum Voltage Gain GMIN VAGC = 0.5 V, Pin = −30 dBm Note 1 6 10 14 dB
Gain Control Range (input prescribe) GCRin VAGC = 0.5 to 3.0 V Note 1 43 50 − dB
Gain Control Range (output prescribe) GCRout Vout = 1.0 Vp-p Note 1 36 40 − dB
Gain Slope Gslope Gain (@ VAGC = 2.2 V) − Gain (@ VAGC
= 1.2 V) Note 1 26.5 29.5 32.5 dB/V
Maximum Output Voltage Voclip VAGC = 3.0 V (@ Maximum gain)
Note 1 2.0 2.8 − Vp-p
Noise Figure NF VAGC = 3.0 V (@ Maximum gain)
Note 3 − 4.2 5.7 dB
3rd Order Intermodulation Distortion 1 IM31 f1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω,
Pin = −30 dBm/tone,
Vout = 0.7 Vp-p/tone (@ single-ended
output) Note 1
43 47 − dBc
3rd Order Intermodulation Distortion 2 IM32 f1 = 44 MHz, f2 = 45 MHz, ZL = 250 Ω,
VAGC = 3.0 V (@ Maximum gain),
Vout = 0.7 Vp-p/tone (@ single-ended
output) Note 1
50 56 − dBc
Gain Difference of
OUTPUT1 and OUTPUT2
∆
G VAGC = 3.0 V, Pin = −60 dBm,
∆
G = G (@ Pout1) − G (@ Pout2)
Note 1, 2
−0.5 0 +0.5 dB
Notes 1. By measurement circuit 1
2. By measurement circuit 2
3. By measurement circuit 3
Data Sheet PU10171EJ03V0DS 5
µ
PC3221GV
STANDARD CHARACTERISTICS (TA = +25°C, VCC = 5 V, ZS = 50 Ω)
Parameter Symbol Test Conditions Reference Value Unit
Noise Figure 2 NF2 Gain reduction = −10 dBm Note 2 6.0 dB
Noise Figure 3 NF3 Gain reduction = −20 dBm Note 2 9.5 dB
Output Voltage Vout Pin = −56 to −16 dBm Note 1 1.0 Vp-p
Input Impedance Zin VAGC = 0.5 V, f = 45 MHz Note 3 0.9 k − j1.4 k Ω
Output Impedance Zout VAGC = 0.5 V, f = 45 MHz Note 3 9.0 + j1.9 Ω
Input 3rd Order Distortion
Intercept Point IIP3 VAGC = 0.5 V (@ Minimum gain),
f1 = 44 MHz, f2 = 45 MHz,
ZL = 250 Ω (@ single-ended output)
Note 1
+2.5 dBm
Notes 1. By measurement circuit 1
2. By measurement circuit 3
3. By measurement circuit 4
Data Sheet PU10171EJ03V0DS
6
µ
PC3221GV
MEASUREMENT CIRCUIT 1
Note Spectrum
Analyzer
50 Ω
50 Ω
200 Ω
1 kΩ
V
AGC
V
CC
1 F
µ
1 F
µ
200 Ω
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1
2
3
4
8
7
6
5
AGC AMP. Video AMP.
50 Ω
Signal
Generator
AGC Control
Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type)
MEASUREMENT CIRCUIT 2
Note 200 Ω
1 kΩ
V
AGC
V
CC
1 F
µ
1 F
µ
200 Ω
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1
2
3
4
8
7
6
5
AGC AMP. Video AMP.
50 Ω
Signal
Generator
50 Ω
Spectrum
Analyzer
50 Ω
AGC Control
Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type)
Data Sheet PU10171EJ03V0DS 7
µ
PC3221GV
MEASUREMENT CIRCUIT 3
Note
NF Meter
50 Ω
50 Ω
200 Ω
1 kΩ
V
AGC
V
CC
1 F
µ
1 F
µ
200 Ω
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1
2
3
4
8
7
6
5
AGC AMP. Video AMP.
AGC Control
Noise Source
Note Balun Transformer: TOKO 617DB-1010 B4F (Double balanced type)
MEASUREMENT CIRCUIT 4
Network Analyzer
50 Ω50 Ω
50 Ω50 Ω1 kΩ
V
AGC
V
CC
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1 F
µ
1
2
3
4
8
7
6
5
AGC AMP. Video AMP.
AGC Control
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10171EJ03V0DS
8
µ
PC3221GV
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
(MEASUREMENT CIRCUIT 1)
200 Ω
200 Ω
1kΩ
1 F
V
CC
µ
1 F
µ
PC3221GV
µ
V
AGC
1 F
µ
1 F
µ
Note 1 F
µ
1 F
µ
Note Balun Transformer
Remarks
1. Back side: GND pattern
2. Solder plated on pattern
3. : Through hole
Data Sheet PU10171EJ03V0DS 9
µ
PC3221GV
TYPICAL CHARACTERISTICS (TA = +25°C , unless otherwise specified)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Circuit Current ICC (mA)
50
40
30
20
10
0
Supply Voltage VCC (V)
0123456
No input signal
TA = –40˚C
TA = +25˚C
TA = +85˚C
AGC PIN CURRENT vs.
GAIN CONTROL VOLTAGE RANGE
AGC Pin Current IAGC ( A)
100
80
60
40
20
0
Gain Control Voltage Range VAGC (V)
0 0.5 1.0 1.5 2.0 3.5 4.0
No input signal
TA = –40˚C
3.02.5
µ
TA = +85˚C
TA = +25˚C
VOLTAGE GAIN vs.
GAIN CONTROL VOLTAGE RANGE
Voltage Gain (dB)
70
60
50
40
30
20
10
0
Gain Control Voltage Range VAGC (V)
VCC = 5.0 V
f = 45 MHz
TA = +85˚C
TA = +25˚C
0 0.5 1.0 1.5 2.0 3.5
3.02.5
TA = –40˚C
VOLTAGE GAIN vs.
GAIN CONTROL VOLTAGE RANGE
Voltage Gain (dB)
70
60
50
40
30
20
10
0
Gain Control Voltage Range VAGC (V)
0 0.5 1.0 1.5 2.0 3.5
f = 45 MHz
3.02.5
VCC = 5.5 V
VCC = 4.5 V
VCC = 5.0 V
AGC PIN CURRENT vs.
GAIN CONTROL VOLTAGE RANGE
AGC Pin Current IAGC ( A)
100
80
60
40
20
0
Gain Control Voltage Range VAGC (V)
0 0.5 1.0 1.5 2.0 3.5 4.0
No input signal
VCC = 4.5 V
3.02.5
µ
VCC = 5.5 V
VCC = 5.0 V
70
60
50
40
30
20
10
0
–10
–20
–30
–40
–50
–60
VOLTAGE GAIN vs. FREQUENCY
Voltage Gain (dB)
10 100 1 000
Frequency f (MHz)
VCC = 5.5 V
5.0 V
4.5 V
VAGC = 3.0 V (Pin = –60 dBm)
VAGC = 1.6 V (Pin = –60 dBm)
VAGC = 0.5 V (Pin = –30 dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10171EJ03V0DS
10
µ
PC3221GV
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
f = 45 MHz
V
AGC
= 3.0 V V
CC
= 5.5 V
5.0 V
4.5 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
f = 45 MHz
V
AGC
= 1.6 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
V
CC
= 5.5 V
5.0 V
4.5 V
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
f = 45 MHz
V
AGC
= 0.5 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
4.5 V
V
CC
= 5.5 V
5.0 V
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
V
CC
= 5.0 V
f = 45 MHz
V
AGC
= 1.6 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
V
CC
= 5.0 V
f = 45 MHz
V
AGC
= 3.0 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
T
A
= +85˚C
+25˚C
–40˚C
+25˚C
–40˚C
T
A
= +85˚C
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(50 Ω/250 Ω) (dB)
5
0
–5
–10
–15
–20
–25
–30
Input Power P
in
(dBm)
V
CC
= 5.0 V
f = 45 MHz
V
AGC
= 0.5 V
–
80
–
70
–
60
–
50
–
40
–
30
–
20 0 10
–
10
–40˚C
T
A
= +85˚C
+25˚C
Remark The graphs indicate nominal characteristics.
Data Sheet PU10171EJ03V0DS 11
µ
PC3221GV
NOISE FIGURE vs.
GAIN CONTROL VOLTAGE RANGE
Noise Figure NF (dB)
25
20
15
10
5
0
Gain Control Voltage Range V
AGC
(V)
V
CC
= 5.0 V
f = 45 MHz
1.0 1.5 2.0 3.0 3.52.5
NOISE FIGURE vs.
GAIN CONTROL VOLTAGE RANGE
Noise Figure NF (dB)
25
20
15
10
5
0
Gain Control Voltage Range V
AGC
(V)
f = 45 MHz
1.0 1.5 2.0 3.0 3.52.5
V
CC
= 4.5 V
5.0 V
5.5 V
NOISE FIGURE vs. GAIN REDUCTION
Noise Figure NF (dB)
25
20
15
10
5
0
Gain Reduction (dB)
–40 –30 –20
0
–10
V
CC
= 5.0 V
5.5 V
V
CC
= 4.5 V
NOISE FIGURE vs. GAIN REDUCTION
Noise Figure NF (dB)
30
25
20
15
10
5
0
Gain Reduction (dB)
V
CC
= 5.0 V
f = 45 MHz
–40 –30 –20
0
–10
T
A
= –40˚C
+25˚C
+85˚C
T
A
= –40˚C
+25˚C
+85˚C
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –70 –60 –50 –40 –30 –20
Output Power P
out
(50 Ω/250 Ω) (dB)
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
AGC
= 3.0 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
3rd Order Intermodulation Distortion IM
3
(dBc)
–80
V
CC
= 4.5 V
5.0 V
5.5 V
V
CC
= 5.5 V
5.0 V
4.5 V
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –40 –30 –20 –10 0 10
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
AGC
= 1.6 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
–50
V
CC
= 4.5 V
5.0 V 5.5 V
V
CC
= 4.5 V
5.0 V
5.5 V
f = 45 MHz
Output Power P
out
(50 Ω/250 Ω) (dB)
3rd Order Intermodulation Distortion IM
3
(dBc)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10171EJ03V0DS
12
µ
PC3221GV
70
60
50
40
30
20 –50 –40 –30 –20 –10
Input Power P
in
(dBm)
IM3 vs. INPUT POWER
V
out
= 0.7 V
p-p
/tone
freq1 = 44 MHz
freq2 = 45 MHz
3rd Order Intermodulation Distortion IM
3
(dBc)
–60
V
CC
= 5.5 V
5.0 V
4.5 V
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –30 –20 –10 0 10 20
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
AGC
= 0.5 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
–40
V
CC
= 4.5 V
5.0 V
V
CC
= 5.5 V
5.0 V
4.5 V
5.5 V
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –70 –60 –50 –40 –30 –20
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
CC
= 5.0 V
V
AGC
= 3.0 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
–80
T
A
= –40˚C
T
A
= +85˚C
+25˚C
–40˚C
+85˚C
+25˚C
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –40 –30 –20 –10 0 10
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
CC
= 5.0 V
V
AGC
= 1.6 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
–50
T
A
= +85˚C
+25˚C
+85˚C
+25˚C
–40˚C
–40˚C
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90 –30 –20 –10 0 10 20
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
V
CC
= 5.0 V
V
AGC
= 0.5 V
freq1 = 44 MHz
freq2 = 45 MHz
IM
3
P
out
–40
T
A
= +85˚C
+25˚C
+85˚C
+25˚C
–40˚C
–40˚C
70
60
50
40
30
20 –50 –40 –30 –20 –10
Input Power P
in
(dBm)
IM3 vs. INPUT POWER
V
CC
= 5.0 V
V
out
= 0.7 V
p-p
/tone
freq1 = 44 MHz
freq2 = 45 MHz
3rd Order Intermodulation Distortion IM
3
(dBc)
–60
+25˚C
–40˚C
T
A
= +85˚C
Output Power P
out
(50 Ω/250 Ω) (dB)
3rd Order Intermodulation Distortion IM
3
(dBc)
Output Power P
out
(50 Ω/250 Ω) (dB)
3rd Order Intermodulation Distortion IM
3
(dBc)
Output Power P
out
(50 Ω/250 Ω) (dB)
3rd Order Intermodulation Distortion IM
3
(dBc)
Output Power P
out
(50 Ω/250 Ω) (dB)
3rd Order Intermodulation Distortion IM
3
(dBc)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10171EJ03V0DS 13
µ
PC3221GV
S-PARAMETERS (TA = +25°C, VCC = VAGC = 5.0 V)
S11−FREQUENCY
1
23
1 : 10 MHz 2.889 kΩ–1.059 kΩ 15.33 pF
2 : 45 MHz 864.1 Ω–1.402 kΩ2.524 pF
3 : 100 MHz 235.0 Ω–806.9 Ω1.973 pF
S22−FREQUENCY
3
2
1
1 : 10 MHz 9.032 Ω466.5 mΩ7.335 nH
2 : 45 MHz 8.998 Ω1.887 Ω6.675 nH
3 : 100 MHz 7.266 Ω6.750 Ω10.74 nH
Data Sheet PU10171EJ03V0DS
14
µ
PC3221GV
PACKAGE DIMENSIONS
8-PIN PLASTIC SSOP (4.45 mm (175)) (UNIT: mm)
1.5±0.1
0.575 MAX.
0.10
M
1.8 MAX.
0.1±0.1
0.3
+0.10
–0.05
detail of lead end
3˚
+7˚
–3˚
0.65
8
5
14
2.9±0.1
4.94±0.2
0.5±0.2
0.87±0.2
3.2±0.1
0.15
+0.10
–0.05
0.15
Data Sheet PU10171EJ03V0DS 15
µ
PC3221GV
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
VPS Note Peak temperature (package surface temperature) : 215°C or below
Time at temperature of 200°C or higher : 25 to 40 seconds
Preheating time at 120 to 150°C : 30 to 60 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
VP215
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (pin temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Note Excluding lead-free products
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10171EJ03V0DS
16
µ
PC3221GV
M8E 00. 4 - 0110
The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PU10171EJ03V0DS 17
µ
PC3221GV
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
µ
PC3221GV
