Datasheet
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RCX511N25
Nch 250V 51A Power MOSFET
Outline
V
DSS
250V
TO-220FM
R
DS(on)
(Max.) 65m
I
D
51A
P
D
84W
Features Inner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be sim ple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS com p liant
6) 100% Avalanche tested Packaging specifi cations
Type
Packaging Bulk
Application Reel size (mm ) -
Switching Power Supply Tape width (mm) -
Automotive Motor Drive Basic ordering unit ( pcs) 500
Drain - Source voltage V
DSS
250 V
Automot ive Solenoid Drive Taping code -
Marking RCX511N25
Absolute maximum rati ngs(T
a
= 25°C)
Parameter Symbol Value Unit
Pulsed drain current I
D,pulse *2
204 A
T
c
= 25°C
T
c
= 100°C
Continuous drain curr ent I
D *1
A
51
I
D *1
27.7 A
P
D
2.23 W
Avalanche energy, single pulse
Avalanche current
T
c
= 25°C
T
a
= 25°C
Power dissipation
Gate - Source voltage V
GSS
30 V
P
D
84 W
mJ
A
E
AS
*3
I
AR
*3
197.9
25.5
Junction temperat ur e T
j
150 °C
Range of storage t em per ature T
stg
55 to 150 °C
1 BODY DIODE
(1) Gate
(2) Drain
(3) Source
∗1
(1) (2) (3)
(1) (3)
(2)
1/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Thermal resistance, junction - case
V5.0
m
VGS = 10V, ID = 25.5A
Tj = 125°C
100
A
--10
nA
Zero gate voltage drain current
V(BR)DSS
IDSS
Values
Min. Typ. Max.
VDS = 250V, VGS = 0V
Tj = 25°C
Thermal resistance
Parameter Symbol
Symbol Conditions
VGS = 0V, ID = 1mA
Tsold
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
RthJA
RthJC
Electrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown voltage
Values Unit
Min. Typ. Max.
- 1.48 °C/W
- - °C/W56
-
°C
V250 - -
- - 265
Unit
Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.0 -
Gate - Source leakage current IGSS VGS = 30V, VDS = 0V --
S
Static drain - source
on - state resistance
VGS = 10V, ID = 25.5A -4865
- 110
Forward transfer admittance VDS = 10V, ID = 25.5A 15 30 -
gfs
RDS(on) *4 155
2/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
*1 Limited only by maximum temperat ur e allowed.
*2 Pw 10s, Duty cycle 1%
*3 L ⋍ 500H, V
DD
= 50V, Rg = 25, starting T
j
= 25°C
*4 Pulsed
-
Continuous source curr ent
120 -
I
S
= 25.5A
di/dt = 100A/s
Reverse recovery charge Q
rr *4
- 1100 -
Body diode electrical characterist i cs (Source-Drain)(T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Gate plat eau voltage V
(plateau)
V
DD
⋍ 125V, I
D
= 51A -6.5
nC
204 A
Forward voltage V
SD *4
V
GS
= 0V, I
S
= 51A --1.5V
175 - ns
T
c
= 25°C
Reverse recovery time t
rr *4
I
S
*1
--51A
Pulsed source current I
SM
*2
-
Electrical charact eri st i cs(T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
pFOutput capacit ance C
oss
V
DS
= 25V - 350 -
Reverse transfer capacitance C
rss
f = 1MHz
Input capacitance C
iss
V
GS
= 0V - 7000 -
- 200 -
Turn - on delay time t
d(on) *4
V
DD
⋍ 125V, V
GS
= 10V -65-
ns
Rise time t
r *4
I
D
= 25.5A - 300 -
Turn - off delay tim e t
d(off) *4
R
L
= 4.7- 170 -
Fall time t
f *4
R
G
= 10- 210 -
Gate Charge characterist i cs (T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
-
-V
I
D
= 51A
V
GS
= 10V
-40-
Gate - Drain charge Q
gd *4
-40-
nCGate - Sour ce char ge Q
gs *4
Total gate charge Q
g *4
V
DD
⋍ 125V -
3/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
0
20
40
60
80
100
120
0 255075100125150175
0.01
0.1
1
10
0.0001 0.01 1 100
Ta=25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 56º C /W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
Ta=25ºC
Single Pulse
Operation in this
area is limited
by RDS(on)
PW = 100s
PW = 1ms
PW = 10ms
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Power Dissipation : PD/PDmax. [%]
Drain Current : ID[A]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Norm alized T r ans ient T her mal Resistance : r(t)
Pulse Width : PW [s]
Junction Temperature : Tj[°C] Drain - Source Voltage : VDS [V]
4/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1
Ta=25ºC
Pulsed
VGS=6.0V
VGS=10.0V
VGS=7.0V
VGS=8.0V
0
10
20
30
40
50
0246810
Ta=25ºC
Pulsed
VGS=6.0V
VGS=10.0V
VGS=7.0V
VGS=8.0V
0.1
1
10
100
1000
0.01 0.1 1 10 100
VDD=50V,RG=25
VGF=10V,VGR=0V
Starting Tch=25ºC
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.6 Typical Output Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.7 Typical Output Characteristics(II)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.4 Avalanche Current vs Inductive Load
Avalanche Cur rent : IAS [A]
Coil Inductanc e : L [m H]
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max . [%]
Junction Temperature : Tj[°C]
5/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
220
240
260
280
300
320
340
-50 0 50 100 150
VGS = 0V
ID = 1mA
0.001
0.01
0.1
1
10
100
012345678910
VDS= 10V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50 -25 0 25 50 75 100 125 150
VDS = 10V
ID = 1mA
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS= 10V
Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Gate Thr es hold Voltage : VGS(th) [V]
Junction Temperature : Tj[°C]
Fig.11 Transconductance vs. Drain Current
Trans c onductanc e : gfs [S]
Drain Current : ID[A]
Fig.8 Breakdown Voltage
vs. Junction Temperature
Junction Temperature : Tj[°C]
Fig.9 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Drain Current : ID[A]
Norm ar ize Drain - Sour ce Br eakdown Voltage
: V(BR)DSS [V]
6/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
0
50
100
150
200
0 5 10 15
Ta=25ºC
ID = 25.5A
ID = 51A
1
10
100
1000
0.01 0.1 1 10 100
Ta=25ºC
VGS = 10V
0
50
100
150
-50 0 50 100 150
VGS = 10V
ID= 5A
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Dr ain - Sourc e O n-State Res istanc e
: RDS(on) [m]
Junction Temperature : Tj[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Dr ain - Sourc e O n-State Res istanc e
: RDS(on) [m]
Drain Current : ID[A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Dr ain - Sourc e O n-State Res istanc e
: RDS(on) [m]
Gate - Source Voltage : VGS [V]
7/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
0
20
40
60
80
100
120
0 255075100125150175
1
10
100
1000
0.01 0.1 1 10 100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
VGS= 10V
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Dr ain - Sourc e O n-State Res istanc e
: RDS(on) [m]
Drain Current : ID[A]
Fig.16 Drain Current Derating Curve
Drain Current Dis sipation
: ID/ID max. (%)
Junction Temperature : Tj[ºC]
8/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
10
100
1000
10000
100000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta= 25ºC
f = 1MHz
VGS = 0V
10
100
1000
10000
0.01 0.1 1 10 100
tr
tf
td(on)
td(off)
Ta=25ºC
VDD= 125V
VGS= 10V
RG=10
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250
Ta=25ºC
VDD= 125V
ID= 51A
RG=10
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.19 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg[nC]
Fig.18 Switching Characteristics
Switching Tim e : t [ns]
Drain Current : ID[A]
9/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Electrical charact eri st i c curves
10
100
1000
0.1 1 10 100
Ta=25ºC
di / dt = 100A / s
VGS = 0V
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
VGS=0V
Fig21 Reverse Recovery Time
vs.Source Current
Reverse Recovery Time : trr [ns]
Source Curr ent : IS[A]
Fig.20 Source Current
vs. Source - Drain Voltage
Source Curr ent : IS[A]
Source-D rain Voltage : VSD [V]
10/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Measurement circuit s
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
V
GS
I
G(Const.)
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90% 90%
10% 10%
50%
10%
50%
VGS
Pulse width
VDS
ton toff
tr
td(on) tf
td(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
VG
VGS
Charge
Q
g
Q
gs
Q
gd
V
GS
R
G
V
DS
D.U.T.
I
AS
L
V
DD
IAS
VDD
V(BR)DSS
I
AS
2
L
EAS =V(BR)DSS
-
VDD
V(BR)DSS
1
2
11/12 2016.02 - Rev.B
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Data Sheet
RCX511N25
Dimensions (Unit : mm)
Dimension in mm/inches
TO-220FM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015
2.54 0.10
DIM MILIMETERS INCHES
D
b1
E1
E
e
b
c
F
A2A1
AL
x A
A4
φp
Q
A
12/12 2016.02 - Rev.B
Notice-PGA-E Rev.003
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅣ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
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Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
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A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
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