Diode
RapidSwitchingEmitterControlledDiode
IDV08E65D2
FullPAKwithEmitterControlledDiode
Datasheet
IndustrialPowerControl
2
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
RapidSwitchingEmitterControlledDiode
Features:
•ElectricallyisolatedFullPAKforefficientassembly
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltage
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/diode/
Applications:
•BoostdiodeinCCMPFC
A
C
C
A
KeyPerformanceandPackageParameters
Type Vrrm IfVf,Tvj=25°C Tvjmax Marking Package
IDV08E65D2 650V 8A 1.6V 175°C E08ED2 PG-TO220-2-22 FP
3
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 650 V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF8.0
4.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 24.0 A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave IFSM 60.0 A
PowerdissipationTC=25°C Ptot 27.3 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
Diode thermal resistance,1)
junction - case Rth(j-c) 5.50 K/W
Thermal resistance
junction - ambient Rth(j-a) 65 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Diode forward voltage VF
IF=8.0A
Tvj=25°C
Tvj=175°C
-
-
1.60
1.65
2.20
-
V
Reverse leakage current IR
VR=650V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
2000.0
µA
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
5
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 23 - ns
Diode reverse recovery charge Qrr - 0.11 - µC
Diode peak reverse recovery current Irrm - 7.4 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -3300 - A/µs
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
Diode reverse recovery time trr - 40 - ns
Diode reverse recovery charge Qrr - 0.08 - µC
Diode peak reverse recovery current Irrm - 2.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -1300 - A/µs
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time trr - 30 - ns
Diode reverse recovery charge Qrr - 0.20 - µC
Diode peak reverse recovery current Irrm - 10.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -2200 - A/µs
Tvj=175°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
Diode reverse recovery time trr - 58 - ns
Diode reverse recovery charge Qrr - 0.13 - µC
Diode peak reverse recovery current Irrm - 3.8 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -2200 - A/µs
Tvj=125°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
6
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
Figure 2. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
5.5E-3
3.3E-6
2
0.13988
3.1E-5
3
1.1791
3.1E-4
4
1.02414
2.4E-3
5
0.52949
0.02313464
6
0.89284
0.3541141
7
1.5821
2.438381
8
0.13013
28.31257
Figure 3. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
0 500 1000 1500 2000 2500 3000 3500 4000
0
10
20
30
40
50
60
70
80
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
Figure 4. Typicalreverserecoverychargeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
0 500 1000 1500 2000 2500 3000 3500 4000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
7
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
Figure 5. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irrm,REVERSERECOVERYCURRENT[A]
0 500 1000 1500 2000 2500 3000 3500 4000
0
5
10
15
20
25
30
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
Figure 6. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
0 500 1000 1500 2000 2500 3000 3500 4000
-7000
-6000
-5000
-4000
-3000
-2000
-1000
0
Tj=25°C, IF = 8A
Tj=175°C, IF = 8A
Figure 7. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5
0
2
4
6
8
10
12
14
16
18
Tj=25°C
Tj=175°C
Figure 8. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF=4A
IF=8A
IF=16A
8
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
9
IDV08E65D2
EmitterControlledDiode
Rev.2.2,2014-08-28
t
a
a
b
b
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
Et
tV I t
off = x x d
1
2
CE C
∫
Et
tV I t
on = x x d
3
4
CE C
∫
CC
10
IDV08E65D2
Emitter Controlled Diode
Rev. 2.2, 2014-08-28
Revision History
IDV08E65D2
Revision: 2014-08-28, Rev. 2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2013-03-13 Preliminary data sheet
2.1 2013-12-16 Final DS / New Marking Pattern
2.2 2014-08-28 Value VFmax limit according BE test
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
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question, please contact the nearest Infineon Technologies Office.
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and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
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