01/2006
Figure 1: Block Diagram
FEATURES
•Internal Reference Voltage
•Integrated Power Control Scheme
•InGaP HBT Technology
•ESD Protection on All Pins (2.5 kV)
•Low profile 1.3 mm
•Small Package Outline 7 mm x 7 mm
•EGPRS Capable (class 12)
•RoHS Compliant Package, 250 oC MSL-3
GMSK MODE
•Integrated power control (CMOS)
•+35.5 dBm GSM850/900 Output Power
•+33.5 dBm DCS/PCS Output Power
•55 % GSM850/900 PAE
•53 % DCS/PCS PAE
•Power control range > 50 dB
EDGE MODE
•+29 dBm GSM850/900 Output Power
•+28.5 dBm DCS/PCS Output Power
•25 % GSM850/900 PAE
•30 % DCS/PCS PAE
•64 dB Typical ACPR (400 kHz)
•74 dB Typical ACPR (600 kHz)
APPLICATIONS
•Dual/Tri/Quad Band Handsets and PDAs
•Dual/Tri/Quad Band Wireless Data Cards
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using an open loop polar architec-
ture. There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function.
AND0041R
Quad-band GSM/GPRS/Polar EDGE
Power Amplifier Module
with Integrated Power Control
PRELIMINARY DAT A SHEET - REV 1.3
GSM850/900_IN
TX_EN
DCS/PCS_IN
GSM850/900_OU
T
GSM850/900
Bias/Power
Control
DCS/PCS_OUT
DCS/PCS
BS
V
RAMP
V
BATT
C
EXT
M11 Package
18 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
AND0041R
The amplifier’s power control range is typically 55
dB, with the output power set by applying an analog
voltage to VRAMP. All of the RF ports for this device are
internally matched to 50Ω.
2
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 1: Pin Description
Figure 2: Pinout (X - ray T op View)
VCC2
DCS/PCS_IN
BS
T _EN
X
VBATT
VRAMP
GSM_IN
DCS/PCS_OU
T
GSM_OUT
VCC_OUT
18
1
98
7
2
3
4
5
6
10
16
11
13
15
12
14
17
CEXT
GND
GND
GND
GND
GND
GND
V
CC2
NIP EMAN NOITPIRCSED NIP EMAN NOITPIRCSED
1NI_SCP/SCDtupnIFRSCP/SCD01TUO_MSGtuptuOFR009/058MSG
2SBtupnIcigoLtceleSdnaB11DNGdnuorG
3NE_XTtupnIcigoL
elbanEXT21DNGdnuorG
4V
TTAB
ylppuSyrettaB
noitcennoC 31TUO_CCV
tuptuOegatloVlortnoC
detcennocebtsumhcihw
Vot
2CC
gnilpuocedon,
5C
TXE
ssapyB41DNGdnuorG
6V
PMAR
otdesulangiSgolanA
rewoptuptuoehtlortnoc 51DNGdnuorG
7NI_MSGtupnIFR009/058MSG61TUO_SCP/SCDtuptuOFRSCP/SCD
8V
2CC
roftupnIlortnoCCCV
009/058MSG
reifilpma-erP
71DNGdnuorG
9DNGdnuorG81V
2CC
V
CC
roftupnIlortnoC
SCP/SCD
reifilpma-erP
3
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
T able 2: Absolute Maximum Ratings
RETEMARAP NIM XAM STINU
(egatloVylppuSV
TTAB
)-7+V
(rewoPtupnIFRFR
NI
)-11mBd
(egatloVlortnoCV
PMAR
)3.0-8.1V
(erutarepmeTegarotST
GTS
)55-051C°
18
1
98
7
2
3
4
5
6
10
16
11
13
15
12
14
17
GND
V
CC2
>+2500 V
<-2500 V
V
CC2
>+2500 V
<-2500 V
GND
GND
GND
GND
GND
V
OUT
>+2500 V <-2500 V
GSM_OUT
>+2500 V <-2500 V
DCS/PCS_OUT
>+2500 V <-2500 V
GSM_IN
>+1500 V <-1500 V
DCS/PCS_IN
>+2500 V <-2500 V
BS
>+2500 V <-2500 V
TX_EN
>+2500 V <-2500 V
V
BATT
>+2500 V <-2500 V
C
EXT
>+2500 V <-2500 V
V
RAMP
>+2500 V <-2500 V
GND
Figure 3: ESD Pin Rating
ELECTROST A TIC DISCHARGE SENSITIVITY
The AND0041R part was tested to determine the
ESD sensitivity of each package pin with respect to
ground. All the package pins were subjected to an
ESD pulse event using the Human Body Model out-
lined in JESD22-A114C.01 in either polarity with re-
spect to ground. The pre and post test I-V character-
istics of each pin are recorded. The ratings on each
pin require that it sustain the ESD event and show
no degradation.
4
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 5: Digital Input s
T able 6: Logic Control T able
RETEMARAP LOBMYS NIM PYT XAM STINU
egatloVhgiHcigoLV
HI
2.1- 0.3V
egatloVwoLcigoLV
LI
-- 5.0V
tnerruChgiHcigoLI|
IH
|--03mA
tnerruCwoLcigoLI|
IL
|--03mA
EDOMLANOITAREPO SB NE_XT
009/058MSGWOLHGIH
SCP/SCDHGIHHGIH
DELBASIDAP-WOL
T able 4: Operating Conditions
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
RETEMARAP NIM PYT XAM STINU STNEMMOC
(erutarepmetesaCT
C
)02--58C°
(egatlovylppuSV
TTAB
)0.35.38.4V
tnerrucegakaelylppusrewoP-101mA
V
TTAB
V,V8.4=
PMAR
,V0=
WOL=NE_XT
deilppaFRoN
egnaRegatloVlortnoC2.0-6.1V
(emiTnonruTT
NO
)--1
msV
PMAR
WOL=NE_XT,V2.0= YHGIH
P
NI
Bd5=
(emiTffOnruTT
FFO
) --1
msV
PMAR
WOL=NE_XT,V2.0= YHGIH
P
NI
Bd5=
(emiTesiRT
ESIR
) --1
msP
TUO
mBd01-= YP
XAM
)Bd2.0nihtiw(
(emiTllaFT
LLAF
) --1
msP
TUO
P=
XAM
Y)Bd2.0nihtiw(mBd01-
V
PMAR
ecnaticapaCtupnI-3-Fp
V
PMAR
tnerruCtupnI--01mA
elcyCytuD--05%
5
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 7: Electrical Characteristics for GSM850 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse W idth =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW , TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI
)
428-948zHM
P(rewoPtupnI
NI
) 035 mBd
P(rewoPtuptuO
XAM
)5.438.53- mBdzHM948ot428=qerF
rewoPtuptuOdedargeD
P(
TUO
)8.238.33- mBd V
TTAB
T,V0.3=
C
C°58=
P
NI
mBd0=
P@EAP
XAM
8435-% zHM948ot428=qerF
1noitalosIdrawroF-63-03-mBd P,V0=NE_XT
NI
mBd5=
2noitalosIdrawroF-03-02-mBd V,HGIH=NE_XT
PMAR
V2.0=
P
NI
mBd5=
noitalosIssorCF2(
o
F3,
o
)tropSCP/SCD@ -72-02-mBdP
TUO
< mBd5.43
cinomraHdnoceS-02-01-mBdP
TUO
< mBd5.43
cinomraHdrihT-04-51-mBdP
TUO
< mBd5.43
n(of*n>
F,)4
o
≤57.21
zHG -03-01-mBdP
TUO
< mBd5.43
ytilibatS P,sesahPllA1:8=RWSV
TUO
< mBd5.43
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR noitadargeDtnenamrePoN selgnAesahPllA,1:01RWSV P
TUO
< mBd5.43
rewoPesioNXR-48-28-mBd F
XT
,zHk001=WBR,zHM948=
F
XR
P,zHM498ot968=
TUO
< mBd5.43
ssoLnruteRtupnI-1:5.11:5.2RWSVP
TUO
< mBd5.43
6
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Table 8: Electrical Characteristics for GSM850 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Wid th =1154 µµ
µµ
µs, Duty = 25%
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C, BS = LOW , TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI)
428-948zHM
rewoPtupnI 035 mBd
EAP0252- %F
NI
zHM948ot428=
P
TUO
mBd92+=tes
RPCA
zHk002
zHk004
zHk006
zHk0081
-
-
-
-
93-
26-
47-
47-
43-
85-
46-
86-
zHk03/cBd
zHk03/cBd
zHk03/cBd
zHk001/cB
d
noitareporaloPrednusnoitidnocllA
P
TUO
mBd92+=
MVE-15% noitareporaloPrednusnoitidnoCllA
P
TUO
mBd92+=
7
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 9: Electrical Characteristics for GSM900 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse W idth =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI
)
088-519zHM
P(rewoPtupnI
NI
) 035 mBd
P(rewoPtuptuO
XAM
)5.435.53- mBdzHM519ot088=qerF
rewoPtuptuOdedargeD
P(
TUO
)5.235.33- mBd V
TTAB
T,V0.3=
C
C°58=
P
NI
mBd0=
P@EAP
XAM
0555-% zHM519ot088=qerF
1noitalosIdrawroF-53-03-mBd P,V0=NE_XT
NI
mBd5=
2noitalosIdrawroF-03-02-mBd V,HGIH=NE_XT
PMAR
V2.0=
P
NI
mBd5=
noitalosIssorC
F2(
o
F3,
o
)tropSCP/SCD@ -92-02-mBdP
TUO
< mBd5.43
cinomraHdnoceS-52-01-mBdP
TUO
< mBd5.43
cinomraHdrihT-04-51-mBdP
TUO
< mBd5.43
n(of*n>
F,)4
o
[57.21
zHG -92-8-mBdP
TUO
< mBd5.43
ytilibatS
P,sesahPllA1:8=RWSV
TUO
< mBd5.43
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR noitadargeDtnenamrePoN
selgnAesahPllA,1:01RWSV P
TUO
< mBd5.43
rewoPesioNXR
-08-97-mBd F
XT
,zHk001=WBR,zHM519=
F
XR
P,zHM539ot529=
TUO
< mBd5.43
-58-38-mBd F
XT
,zHk001=WBR,zHM519=
F
XR
P,zHM069ot539=
TUO
< mBd5.43
ssoLnruteRtupnI-1:5.11:5.2RWSVP
TUO
< mBd5.43
8
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Table 10: Electrical Characteristics for GSM900 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse W idth =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI)
088-519zHM
rewoPtupnI 035 mBd
EAP0252- %F
NI
zHM519ot088=
P
TUO
mBd92+=tes
RPCA
zHk002
zHk004
zHk006
zHk0081
-
-
-
-
83-
26-
37-
47-
43-
85-
46-
86-
zHk03/cBd
zHk03/cBd
zHk03/cBd
zHk001/cB
d
noitareporaloPrednusnoitidnocllA
P
TUO
mBd92+=
MVE-15% noitareporaloPrednusnoitidnoCllA
P
TUO
mBd92+=
9
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 1 1: Electrical Characteristics for DCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI
)
0171-5871zHM
P(rewoPtupnI
NI
) 035 mBd
P(rewoPtuptuO
XAM
)5.235.33- mBdzHM5871ot0171=qerF
rewoPtuptuOdedargeD
P(
TUO
)5.035.13- mBd V
TTAB
T,V0.3=
C
C°58=
P
NI
mBd0=
P@EAP
XAM
8435-% zHM5871ot0171=qerF
1noitalosIdrawroF-04-33-mBd P,V0=NE_XT
NI
mBd5=
2noitalosIdrawroF-72-02-mBd V,HGIH=NE_XT
PMAR
V2.0=
P
NI
mBd5=
cinomraHdnoceS-52-01-mBdP
TUO
< mBd5.23
cinomraHdrihT-72-51-mBdP
TUO
< mBd5.23
n(of*n>
F,)4
o
[57.21
zHG -43-01-mBdP
TUO
< mBd5.23
ytilibatS
P,sesahPllA1:8=RWSV
TUO
< mBd5.23
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR noitadargeDtnenamrePoN
selgnAesahPllA,1:01RWSV P
TUO
< mBd5.23
rewoPesioNXR-58-08-mBd F
XT
,zHk001=WBR,zHM5871=
F
XR
P,zHM0881ot5081=
TUO
< mBd5.23
ssoLnruteRtupnI-1:5.11:5.2RWSVP
TUO
< mBd5.23
10
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Table 12: Electrical Characteristics for DCS 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse W idth =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI)
0171-5871zHM
rewoPtupnI 035 mBd
EAP5203- %F
NI
zHM5871ot0171=
P
TUO
mBd5.82+=tes
RPCA
zHk002
zHk004
zHk006
zHk0081
-
-
-
-
83-
46-
77-
67-
43-
85-
46-
86-
zHk03/cBd
zHk03/cBd
zHk03/cBd
zHk001/
cBd
noitareporaloPrednusnoitidnocllA
P
TUO
mBd5.82+=
MVE-15% noitareporaloPrednusnoitidnoCllA
P
TUO
mBd5.82+=
11
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
T able 13: Electrical Characteristics for PCS GMSK mode
Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI
)
0581-0191zHM
P(rewoPtupnI
NI
) 035 mBd
P(rewoPtuptuO
XAM
)3.233.33- mBdzHM0191ot0581=qerF
rewoPtuptuOdedargeD
P(
TUO
)3.033.13- mBd V
TTAB
T,V0.3=
C
C°58=
P
NI
mBd0=
P@EAP
XAM
7435-% zHM0191ot0581=qerF
1noitalosIdrawroF-93-23-mBd P,V0=NE_XT
NI
mBd5=
2noitalosIdrawroF-72-02-mBd V,HGIH=NE_XT
PMAR
V2.0=
P
NI
mBd5=
cinomraHdnoceS-71-01-mBdP
TUO
< mBd3.23
cinomraHdrihT-53-51-mBdP
TUO
< mBd3.23
n(of*n>
F,)4
o
[57.21
zHG -33-01-mBdP
TUO
< mBd3.23
ytilibatS
P,sesahPllA1:8=RWSV
TUO
< mBd3.23
-- 63-mBdF
TUO
zHG1<
-- 03-mBdF
TUO
zHG1>
ssendegguR noitadargeDtnenamrePoN
selgnAesahPllA,1:01RWSV P
TUO
< mBd3.23
rewoPesioNXR-58-08-mBd F
XT
,zHk001=WBR,zHM0191=
F
XR
P,zHM0991ot0391=
TUO
< mBd3.23
ssoLnruteRtupnI-1:5.11:5.2RWSVP
TUO
< mBd3.23
12
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Table 14: Electrical Characteristics for PCS 8PSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse W idth =1154 µµ
µµ
µs, Duty = 25%,
ZIN = ZOUT = 50 ΩΩ
ΩΩ
Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO
(
F
NI)
0581-0191zHM
rewoPtupnI 035 mBd
EAP5203- %F
NI
zHM0191ot0581=
P
TUO
mBd5.82+=tes
RPCA
zHk002
zHk004
zHk006
zHk0081
-
-
-
-
83-
46-
87-
77-
43-
85-
46-
86-
zHk03/cBd
zHk03/cBd
zHk03/cBd
zHk001/
cBd
noitareporaloPrednusnoitidnocllA
P
TUO
mBd5.82+=
MVE-15% noitareporaloPrednusnoitidnoCllA
P
TUO
mBd5.82+=
13
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
APPLICA TION INFORMA TION
GSM850/900 RF OUTPUT
GSM 850/ 900 R F IN PU T
1
2
3
4
5
6
7
16
15
14
13
12
11
10
89
18 17
DCS/PCS_PIN
BS
TX_EN
VBAT
T
CEXT
VRAMP
GSM_IN
VCC2 VCC2
GND
GND
GND
GND
GSM_OUT
VCC_OUT
GND
GND
DCS/PCS_OUT
AND0041R
DCS/ P CS RF INP UT
BAN D SELECT
TX EN ABL E
DAC O UT PUT
DCS/PCS RF OUTPUT
BATTERY
VOLTAGE
10K
*
27pF*
* Filtering may be requi red to filter noise from baseband.
** This component should be placed as close to the devi ce pin as possi ble.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not cri tical as they may not be required in the
final application.
2.7pF
**
47uF
++
22nF
**
1nF
++
1nF
++
Figure 3: Recommended Application Circuit
14
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
PACKAGE OUTLINE
Figure 4: Package Outline
Figure 5: Branding Specification
15
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
Figure 6: Recommended PCB Layout Information
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
16
AND0041R
PRELIMINARY DATA SHEET - Rev 1.3
01/2006
ORDERING INFORMA TION
REDRO
REBMUN
ERUTAREPMET
EGNAR
EGAKCAP
NOITPIRCSED GNIGAKCAPTNENOPMOC
8P11MR1400DNAC°58+otC°02-
niP81tnailpmoc-SHoR
mm3.1xmm7xmm7
eludoMtnuoMecafruS
leerrepse
ceip0052,leeRdnaepaT
9P11MR1400DNAC°58+otC°02-
niP81tnailpmoc-SHoR
mm3.1xmm7xmm7
eludoMtnuoMecafruS
leeRdnaepaTlaitraP
