500 A
THYRISTOR / DIODE and
THYRISTOR / THYRIST OR
Bulletin I27401 rev. A 09/97
1
IRK.500.. SERIES
SUPER MAGN-A-pakTM Power Modules
www.irf.com
Features
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters IRK.500.. Units
IT(AV) or IF(AV) 500 A
@ TC82 °C
IT(RMS) 785 A
@ TC82 °C
ITSM or IFSM @ 50Hz 17.8 KA
@ 60Hz 18.7 KA
I2t @ 50Hz 1591 KA2s
@ 60Hz 1452 KA2s
I2√t 15910 KA2√s
VDRM
/VRRM range 800 to 1600 V
TSTG range - 40 to 150 °C
TJrange - 40 to 130 °C
IRK.500.. Series
2
Bulletin I27401 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/IDRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
VVmA
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
IRK.500.. 100
IT(AV) Maximum average on-state current 500 A 180° conduction, half sine wave
IF(AV) @ Case temperature 82 °C
IT(RMS) Maximum RMS on-state current 78 5 A 180° conduction, half sine wave @ TC = 82°C
ITSM Maximum peak, one-cycle, 17.8 KA t = 10ms No voltage
IFSM non-repetitive surge current 18.7 t = 8.3ms reapplied
15.0 t = 10ms 100% VRRM
15.7 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 1591 KA2s t = 10ms No voltage Initial TJ = TJ max.
1452 t = 8.3ms reapplied
1125 t = 10ms 100% VRRM
1027 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 15910 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.85 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 0.93 (I > π x IT(AV)), TJ = TJ max.
rt1 Low level value of on-state slope resistance 0.36 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
rt2 High level value of on-state slope resistance 0.32 (I > π x IT(AV)), TJ = TJ max.
VTM Maximum on-state or forward 1.50 V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
VFM voltage drop
IHMaximum holding current 500 mA TJ = 25°C, anode supply 12V resistive load
ILTypical latching current 1000
Parameter IRK.500.. Units Conditions
On-state Conduction
di/dt Maximum rate of rise of turned-on 1000 A/µs TJ = TJ max., ITM = 400A, VDRM applied
current
tdTypical delay time 2.0 µ s Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
tqTypical turn-off time 200 µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Parameter IRK.500.. Units Conditions
Switching
IRK.500.. Series
3
Bulletin I27401 rev. A 09/97
www.irf.com
TJMax. junction operating temperature range - 40 to 130 °C
Tstg Max. storage temperature range - 40 to 150
RthJC Max. thermal resistance, junction to 0.065 K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to 0.02 K/W
heatsink
T Mounting torque ± 10%SMAP to heatsink 6 - 8 Nm
busbar to SMAP 12 - 15
wt Approximate weight 1500 g
Case style SUPER MAGN-A-pak See outline table
dv/dt Maximum critical rate of rise of off-state 1000 V/µs TJ = 130°C., linear to VD = 80% VDRM
voltage
VINS RMS isolation voltage 3000 V t = 1 s
IRRM Maximum peak reverse and off-state 100 mA TJ = TJ max., rated VDRM/VRRM applied
IDRM leakage current
Parameter IRK.500.. Units Conditions
Blocking
Parameter IRK.500.. Units Conditions
Triggering
PGM Maximum peak gate power 10 W TJ = TJ max., tp < 5ms
PG(AV) Maximum peak average gate power 2.0 W TJ = TJ max., f = 50Hz, d% = 50
+ IGM Maximum peak positive gate current 3.0 A TJ = TJ max., tp < 5ms
+ VGM Maximum peak positive gate voltage 20 V
- VGM Maximum peak negative gate voltage 5.0 V
IGT Max. DC gate current required to trigger 200 mA TJ = 25°C Vak 12V
VGT DC gate voltage required to trigger 3.0 V TJ = 25°C Vak 12V
IGD DC gate current not to trigger 10 mA TJ = TJ max.
VGD DC gate voltage not to trigger 0.25 V
Parameter IRK.500.. Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
IRK.500.. Series
4
Bulletin I27401 rev. A 09/97
www.irf.com
IRK T 500 - 16
123
1- Module type
2- Circuit configuration (See Circuit Configurations Table)
3- Current rating
4- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
4
Device Code
Ordering Information Table
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.009 0.006
120° 0.011 0.011
90° 0.014 0.015 K/W TJ = TJ max.
60° 0.021 0.022
30° 0.037 0.038
IRKT IRKH IRKL
Circuit Configurations Table
+
7(K2)
6(G2)
-
4(K1)
5(G1)
~
1
2
3
+
7(K2)
6(G2)
-
~
1
2
3
+
-
4(K1)
5(G1)
~
1
2
3
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.500.. Series
5
Bulletin I27401 rev. A 09/97
www.irf.com
Outline Table
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0 100 200 300 400 500 60
0
30°60° 90° 120° 180°
Average On -state Curre nt (A)
Max imum Allowab le Ca s e Temp era tu r e ( °C
)
Conduction Angle
IR K.500.. Series
R ( D C) = 0.065 K /W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 90
0
DC
30°60°90°
120°180°
Av era ge On - state Cu rr e n t (A )
Max imu m Allowab le Ca se Temperatu re (°C
)
Conduction Period
IR K.500. . S eries
R ( D C) = 0. 065 K/W
thJC
IRK.500.. Series
6
Bulletin I27401 rev. A 09/97
www.irf.com
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
0
100
200
300
400
500
600
700
0 100 200 300 400 5
00
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average O n-state Powe r Loss (W
)
A v er ag e On -st ate C ur ren t (A )
IRK.500.. Series
Per Junction
T = 130°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 80
0
DC
180°
120°
90°
60°
30°
RM S Limit
Cond uction Period
M ax i mu m A v e r a g e On - s ta t e P ow er Los s (W
)
Ave rage On-state Current (A )
IRK.500.. Series
Per Junction
T = 130°C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N
)
Peak Half Sine Wave On-state Cur rent (A
)
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V A pplied Following Surge.
RRM
IRK.500.. Series
Per Junction
6000
8000
10000
12000
14000
16000
18000
0.01 0.1
1
Pea k Hal f Sine Wav e On-s tate Cur rent (A)
Pul se T rain Dura tion (s )
Maximum Non Repetitive S urge Curren
t
V ersus Pulse Train Duration. Contro
l
Of Conduction May Not Be Maintained
.
In itial T = 130°C
No Voltage Reapplied
Rated V Re applied
RRM
J
IR K.500.. Se ries
Per Junction
0 20406080100120
Maximum Al lowable Ambien t Temperat ure (°C
)
R = 0.07 K/W - Delta R
0.09 K/W
0.12 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
thSA
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Total RMS Output Curren t (A)
Maximum Total On-state Power Loss (W
)
Con duc tion An gle
IRK. 50 0. . Series
Per Module
T = 130°C
J
IRK.500.. Series
7
Bulletin I27401 rev. A 09/97
www.irf.com
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 10 - On-state Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
0 20 40 60 80 100 120
Max im u m All o wab l e Amb i en t Tem per atu re (°C
)
R = 0.01 K/W - Delta R
0.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.12 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Outp ut C urrent (A)
Max imum Tot al Powe r Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.500.. Series
Single Phase Bridge
Connected
T = 130°C
J
0 20 40 60 80 100 120
Max imum Allo wable Ambient T emperature (°C
)
R = 0.01 K/W - Delta R
0.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Curren t (A)
M aximum Total Power Loss (W)
120°
(Rect)
3 x IRK.500.. Series
Three Phase Bridge
Connected
T = 130°C
J
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4
T = 25°C
J
Instantaneo us On-state Current (A)
Instantane ous On-state Voltage (V)
T = 130°C
J
IRK.500.. Series
Per Junction
0.001
0.01
0.1
0.001 0.01 0.1 1 10 10
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
IRK.500.. Series
Per Junction
Steady State Value :
R = 0.065 K /W
(DC O perati o n)
thJC
IRK.500.. Series
8
Bulletin I27401 rev. A 09/97
www.irf.com
Fig. 12 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IGD
(b) (a)
T j=25 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Inst an t a neous G ate Volt age (V)
a) Recommended load line fo r
b ) Recommended load line for
<=30 % rated di/dt : 10V, 1 0 ohms
rated di/dt : 20V, 10ohms; t r<=1 µs
tr<=1 µs
(1)
(1) PGM = 10 W, t p = 4ms
(2) PGM = 20 W, t p = 2ms
(3) PGM = 40 W, t p = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj=130 °C
IR K .500. . Ser i es Frequ ency L im it ed b y PG( AV)
(4)