HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002. 01.18
Page No. : 1/4
HTIP107 HSMC Produc t Specification
HTIP107
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP107 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Tempera ture........................................................................................................ -55 ~ +150 °C
Juncti on Tempe rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 80 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltag e............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current......................................................................................................................... -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=- 1mA, I E=0
BVCEO -100 - - V IC=-3 0mA, I B=0
ICBO - - -50 uA VCB=-100V, IE=0
ICEO - - -50 uA VCE=-50V, IB=0
IEBO - - -8 mA VEB=-5V, IC=0
*VCE (sat)1 - - -2 V IC=-3A, IB=-6mA
*VCE (sat)2 - - -2.5 V IC=-8A, IB=- 8 0mA
*VBE(on) - - - 2.8 V IC=-8A, VCE=-4 V
*hFE1 1 - 20 K IC=-3A, VCE=-4V
*hFE2 200 - - IC=-8A, VCE=-4V
Cob - - 300 pF VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
R2R1
C
E
B
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002. 01.18
Page No. : 2/4
HTIP107 HSMC Produc t Specification
Characteristics Curve
Cur ren t Gain & Collect or Curren t
1
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
25
o
C
125
o
C75
o
C
hFE @ V
CE
=4V
Satur ation Volta ge & C ollect or Cur rent
100
1000
10000
100 1000 10000
Collector Cur rent I
C
(mA)
Sat u r ation Volt ag e ( mV)
V
CE(sat)
@ I
C
=500I
B
125
o
C
75
o
C25
o
C
Satur ation Volta ge & C ollect or Cur rent
100
1000
10000
100 1000 10000
Coll e c tor Cur rent I
C
(mA)
Saturation Volta ge (mV)
V
CE(sat)
@ I
C
=625I
B
125
o
C
75
o
C25
o
C
Satur ation Volta ge & C ollect or Cur rent
100
1000
10000
100 1000 10000
Collec tor Current I
C
(mA)
Satur a t ion Voltag e ( mV)
V
CE(sat)
@ I
C
=100I
B
125
o
C
75
o
C25
o
C
ON Voltage & Col lcetor Curren t
100
1000
10000
10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O N Voltage ( m V)
V
BE(ON)
@ V
CE
=4V
25
o
C75
o
C
125
o
C
Switchin g Time & Collector Current
0.1
1
10
110
Collector Curren t (A)
Switching Times ( us)..
Tstg
Tf
Ton
VCC=30V, IC=250IB1=-250IB2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002. 01.18
Page No. : 3/4
HTIP107 HSMC Produc t Specification
Capa citance & Rever se-Biased Voltage
10
100
1000
0.1 1 10 100
Re ver se- Biased Voltage ( V)
Capacitan ce ( p F)
Cob
Safe Operat ing Area
1
10
100
1000
10000
100000
1 10 100 1000
Forward Vol t a ge- V
CE
(V)
Collec to r Cu rr en t- I
C
(mA)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002. 01.18
Page No. : 4/4
HTIP107 HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder pl ati ng
• Mold Compound: Epoxy resin fam ily, fl ammabi l ity soli d burni ng class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Mic roelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Park Hsi n -Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
HTIP
107
