5/08/01
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Features
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFREDTM
VR = 200V
IF(AV) = 20A
trr = 20ns
Note: QD.C. = 50% rect. wave
R1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB20HJ20C
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Parameter Max. Units
VRCathode to Anode Voltage ( Per Leg ) 200 V
IF(AV) Continuous Forward Current, Q TC = 85°C 20
IFSM Single Pulse Forward Current, R TC = 25°C ( Per Leg) 125
PD @ TC = 25°C Maximum Power Dissipation 28 W
TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 °C
A
Absolute Maximum Ratings
CASE STYLE
SMD-0.5
(ISOLATED BASE)
ANODE COMMON ANODE
CATHODE
PD - 94169A
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HFB20HJ20C
A/µs
nC
A
Dynamic Recovery Characteristics ( Per Leg )@ TJ = 25°C (unless otherwise specified)
A/µs
nC
A
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time — — 20 ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs
trr1 Reverse Recovery Time — 27 — ns TJ = 25°C See Fig.
trr2 — 42— T
J = 125°C 5 IF = 20A
IRRM1 Peak Recovery Current — 3.5 — TJ = 25°C See Fig.
IRRM2 — 5.5 — TJ = 125°C 6 VR = 160V
Qrr1 Reverse Recovery Charge — 54 — TJ = 25°C See Fig.
Qrr2 — 120 — TJ = 125°C 7 dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current — 640 — TJ = 25°C See Fig.
di(rec)M/dt2 During tb— 850 — TJ = 125°C 8
Thermal - Mechanical Characteristics
Parameter Typ. Max. Units
RthJC Junction-to-Case, Single Leg Conducting — 4.5
Wt Weight 1.0 — g
°C/W
See Fig. 2
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 200 — — V IR = 100µA
Electrical Characteristics ( Per Leg ) @ TJ = 25°C (unless otherwise specified)
LSSeries Inductance — 4.8 — nH Measured from center of cathode pad
to center of anode pad
CTJunction Capacitance, See Fig. 3 — — 20 pF VR = 200V
IRReverse Leakage Current — — 10 µA VR = VR Rated
See Fig. 2 — — 1.0 mA V R = VR Rated, T J = 125°C
VFForward Voltage — — 1.26 IF = 10A, TJ = -55°C
See Fig. 1 — — 1.11 IF = 10A, TJ = 25°C
— — 1.30 IF = 20A, TJ = 25°C
— — 0.96 IF = 10A, TJ = 125°C
V
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HFB20HJ20C
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics ( Per Leg )
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage ( Per Leg )
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage ( Per Leg )
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current ( Per Leg )
050 100 150 200
Reverse Voltage - VR (V)
10
100
Junction Capacitance - C T (pF)
TJ = 25°C
050 100 150 200
Reverse Voltage - V R (V)
1E-005
0.0001
0.001
0.01
0.1
1
10
100
Reverse Current - I R (µA)
125°C
75°C
25°C
100°C
0.0 0.4 0.8 1.2 1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I F (A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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HFB20HJ20C
Fig. 7 - Typical Stored Charge Vs. dif/dt ( Per Leg) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt ( Per Leg )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,( Per Leg) Fig. 6 -Typical Recovery Current Vs. dif/dt ( Per Leg)
100 1000
dif / dt - ( A / µs )
10
20
30
40
50
trr - ( ns )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 10A
IF = 40A
IF = 20A
100 1000
dif / dt - ( A / µs )
1
10
100
IRRM - ( A )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 10A
IF = 40A
IF = 20A
100 1000
dif / dt - ( A / µs )
10
100
1000
Qrr - ( nC )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 10A
IF = 40A
IF = 20A
100 1000
dif / dt - ( A / µs )
100
1000
10000
di ( rec )M / dt - ( A / µs )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 10A
IF = 40A
IF = 20A
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HFB20HJ20C
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
d i /d t
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
Case Outline and Dimensions — SMD-0.5
HEXFRED DOUBLE DIE
2 = ANODE 1
1 = COMMON CATHODE
3 = ANODE 2
