GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
1
1
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1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
Part Number Package
NPT2022 Bulk Quantity
NPT2022-SMBPPR Sample Board
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2 GHz
48 V Operation
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2022 GaN HEMT is a wideband transistor
optimized for DC - 2 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 100 W (50 dBm) in an
industry standard plastic package.
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration
Functional Schematic
Pin No. Pin Name Function
1 RFIN / VG RF Input / Gate
2 RFOUT / VD RF Output / Drain
3 Pad1 Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
1
3
2
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 600 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 900 MHz GSS - 21 - dB
Saturated Output Power CW, 900 MHz PSAT - 50.5 - dBm
Drain Efficiency at Saturation CW, 900 MHz SAT - 62 - %
Power Gain 900 MHz, POUT = 100 W GP 19 20 - dB
Drain Efficiency 900 MHz, POUT = 100 W 56 58 - %
Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 24 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 12 mA
Gate Threshold Voltage VDS = 48 V, ID = 24 mA VT -2.5 -1.6 -0.5 V
Gate Quiescent Voltage VDS = 48 V, ID = 600 mA VGSQ -2.1 -1.4 -0.3 V
On Resistance VDS = 2 V, ID = 180 mA RON - 0.2 -
Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 14 - A
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Absolute Maximum Ratings2,3,4
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Parameter Absolute Maximum
Drain Source Voltage, VDS 160 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 48 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 48 V, TJ = 200°C RJC 1.3 °C/W
Thermal Characteristics5
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
Frequency
(MHz) ZS
()
ZL
()
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
500 1.3 + j0.8 5.8 + j2.5 152 26 71
900 1.1 - j1.3 5.0 + j2.8 139 22 70
1800 1.3 - j5.7 3.2 - j1.4 133 17 66
2000 1.4 - j6.3 2.3 - j2.3 119 16 66
Load-Pull Performance: VDS = 48 V, IDQ = 600 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
Impedance Reference ZS and ZL vs. Frequency
ZSZL
14
16
18
20
22
24
26
28
25 30 35 40 45 50 55
500 MHz
900 MHz
1800 MHz
2000 MHz
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
70
80
25 30 35 40 45 50 55
500 MHz
900 MHz
1800 MHz
2000 MHz
Drain Efficiency (%)
Output Power (dBm)
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
5
5
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
Parts measured on evaluation board (30-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
C12
6.8 pF
RFIN
C4
1000 pF
C3
0.01 mF
C2
0.1 mF
C1
1.0 mF
VGS VDS
C13
18 pF
RFOUT
C10
33 pF
NPT2022
C5
1.0 mF
C6
0.1 mF
C7
0.01 mF
C8
1000pF
C11
15 pF
L2
44 nH
L1
19.4 nH
R1
10
C15
8.2 pF
C14
0.8 pF
C9
10 pF
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Reference Value Tolerance Manufacturer Part Number
C1, C5 1.0 µF 10% AVX 12101C105KAT2A
C2, C6 0.1 µF 10% Kemet C1206C104K1RACTU
C3, C7 0.01 µF 10% AVX 12061C103KAT2A
C4, C8 1000 pF 10% Kemet C0805C102K1RACTU
C9 10 pF 5% ATC ATC800B100J
C10 33 pF 10% ATC ATC800B330K
C11 15 pF 10% ATC ATC800B150K
C12 6.8 pF 0.1 pF ATC ATC800B6R8B
C13 18 pF 10% ATC ATC800B180K
C14 0.8 pF 0.1 pF ATC ATC800B0R8B
C15 8.2 pF 0.1 pF ATC ATC800B8R2B
R1 10 Ω 1% Panasonic ERJ-2RKF10R0X
L1 19.4 nH 5% Coilcraft 0806SQ-19NJLB
L2 ~44 nH 10% 20 AWG Cu Wire 4 turn, 5mm ID
PCB Rogers RO4350, r=3.5, 30 mil
Parts list
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
7
Typical performance as measured in the 900 MHz evaluation board:
CW, VDS = 48 V, IDQ = 600 mA (unless noted)
Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature
Quiescent VGS vs. Temperature
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
30 35 40 45 50 55
+25°C
-40°C
+85°C
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
70
30 35 40 45 50 55
+25°C
-40°C
+85°C
Drain Efficiency (%)
Output Power (dBm)
-1.55
-1.50
-1.45
-1.40
-1.35
-1.30
-1.25
-1.20
-50 -25 025 50 75 100
300 mA
600 mA
900 mA
VGSQ (V)
Temperature (°C)
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
8
2-Tone IMD vs. Output Power
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone performance as measured in the 900 MHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 600 mA, TC = 25°C (unless noted)
-50
-45
-40
-35
-30
-25
-20
-15
110 100
450mA
600mA
750mA
900mA
1050mA
IMD (dBc)
POUT (W-PEP)
-55
-50
-45
-40
-35
-30
-25
-20
-15
110 100
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
500
19.5
20.0
20.5
21.0
21.5
22.0
22.5
110 100
450mA
600mA
750mA
900mA
1050mA
Gain (dB)
POUT (W-PEP)
500
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
9
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
9
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
Reference Value Tolerance Manufacturer Part Number
C1 150 µF 20% Nichicon UPW1C151MED
C2, C7 1.0 µF 10% AVX 1210C105KAT2A
C3, C6 0.1 µF 10% Kemet C1206C104K1RACTU
C4, C5 0.01 µF 10% AVX 12061C103KAT2A
C8 270 µF 20% United Chemi-Con ELXY 630ELL271MK25S
C9 18 pF 5% ATC ATC100B180J
C10 1000 pF 5% ATC ATC100B102J
C11 1.5 pF 0.1 pF ATC ATC100B1R5B
C12 5.6 pF 0.1 pF ATC ATC100B5R6B
C13 15 pF 5% ATC ATC100B150J
C14 220 pF 5% ATC ATC600F221J
C15 12 pF 2% ATC ATC600F120F
C16, C17 82 pF 10% ATC ATC100B820K
C18 4.7 pF 0.1 pF ATC ATC100B4R7B
C19 2.4 pF 0.1 pF ATC ATC100B2R4B
C20 3.9 pF 0.1 pF ATC ATC100B3R9B
C21 1.0 pF 0.1 pF ATC ATC100B1R0B
R1 49.9 Ω 1% Panasonic ERJ-6ENF49R9V
R2 470 Ω 1% Panasonic ERJ-1TNF4700U
R3 0.33 Ω 1% Panasonic ERJ-6RQFR33V
R4, R5 24.9 Ω 1% Panasonic ERJ-1TNF24R9U
F1 Material 73 - Fair-Rite 2673000801
F2, F3 4:1 Transformer - Anaren XMT031B5012
L1 25 nH 5% Coilcraft 0908SQ-25NJL
L2, L4 8.0 nH 5% Coilcraft A03TJL
L3, L5 5.0 nH 5% Coilcraft A02TJL
PCB Rogers RO4350, r=3.5, 30 mil
Parts list
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
10
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
10
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
Performance vs. Frequency at POUT= PSAT Performance vs. Frequency at POUT = 49 dBm
Performance vs. Output Power (f = 760 MHz) Small Signal s-parameters vs. Frequency
R1
49.9
C4
0.01 mF
C3
0.1 mF
C2
1.0 mF
VGS VDS
RF
Out
C9
18 pF
NPT2022
C7
1.0 mF
C6
0.1 mF
C5
0.01 mF
L1
25 nH
C8
270 mF
R3
0.33
C1
150 mF
L4
8.0 nH
L5
5.0 nH
C17
82 pF
C16
82 pF
C18
4.7 pF
C13
15 pF
C15
12 pF
R4
24.9
R5
24.9
C12
5.6 pF
L3
5.0 nH
C11
1.5 pF
RF
In
F3
4:1
F2
4:1
C14
220 pF
F1
C10
1000 pF
R2
470
L2
8 nH
C20
3.9 pF
C19
2.4 pF
C21
1.0 pF
5
10
15
20
25
30
35
-30
-25
-20
-15
-10
-5
0
0 200 400 600 800 1,000
S21
S11
S22
Magnitude S21 (dB)
Magnitude S11, S22 (dB)
Frequency (MHz)
5
10
15
20
25
30
40
45
50
55
60
65
0200 400 600 800 1,000
Gain
Drain Eff
Gain (dB)
Drain Efficiency (%)
Frequency (MHz)
11.5
12.0
12.5
13.0
13.5
14.0
14.5
0
10
20
30
40
50
60
25 30 35 40 45 50 55
Gain
Drain Eff
Gain (dB)
Drain Efficiency (%)
POUT (dBm)
5
10
15
20
25
30
45
50
55
60
65
70
0 200 400 600 800 1,000
Gain
Drain Eff
Psat
Gain (dB)
PSAT (dBm), Drain Efficiency (%)
Frequency (MHz)
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
NPT2022
11
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
11
TO272-2 Plastic Package†
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
All dimensions shown as inches [millimeters].
