MIL SPECS HUE D MM 0000125 0034565 24T MBNMILS i The documentation and process conversion INCH-POUND | | measures necessary to comply with this L______J | revision shall be completed by 1 August 1994l MIL-S-19500/411G l J 1 February 1994 SUPERSED ING MIL-S-19500/411F 26 April 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY 14N5415 THROUGH 1N5420, 1N5415US THROUGH 1N5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "HM", "D0", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figures 1 and 2. (Similar to DO-41) 1.3. Maximum ratings. | | { | | | i | | | | | | | [Ig A7 1 Ip Vv 1 Iegy ter ITstg and Ty LORE Rojee | | Types | Vp Vou | | | I | | [ at [ | | | IT, IT, [Ig = 2 Ade | | | at J} L=o | | | | [= 55c |= 100C |T, = 100C | | | | for us | | 2/ | 3 th = 8.3 ms L = .375 | versions | | | [ | | | V de [V (pk) Adc [| A de A (pk) | ons C C/W C/W | | | | | | i { |1N5415, 1N5415US | 50 | SO | 3 | 2 80 | 150 | -65 to +175 20 10 |1N5416, 1N5416US | 100 | 100 | 3 | 2 80 | 150 | -65 to +175 20 10 {1N5417, 1N5417us | 200 | 200 | 3 | 2 80 | 150 | -65 to #175 20 10 [1N5418, 4N5418US | 400 | 400 | 3 | 2 80 | 150 | -65 to +175 20 10 |1N5419, 1N5419Us | 500 | 500 | 3 | 2 80 | 250 | -65 to +175 20 10 [1N5420, 1N5420US | 600 | 600 | 3 | 2 80 | 400 | -65 to +175 20 10 | L i | | | | | V/ I, rating is independent of heat sinking, special mounting or forced air across the body or leads of the device. / Derate linearly at 22 Ma/C for 55C = T, = 100C. Derate linearly at 27 Ma/C for 100C s TS 175C. IIb ~ | Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be | | of use in improving this document should be addressed to: Director, US Army Research Laboratory, | | Electronics and Power Sources Directorate, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ 07703-5601 by | [ using the Standardization Document Improvement Proposal (0D Form 1426) appearing at the end | |_of this document or by letter. | AHSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution 1s unlimited,MIL SPECS M4YE D MM UUU0b2S O0345bb 2b MMILS MIL-S-19500/411G fe DB f T T 1 | | Dimensions | | | - 1 | | Symbol | Inches | Millimeters | Notes | | I T T | | | Min | Max | Min | Max | | t t| | gp | .410 | .180| 2.79] 4.57] 3 | 1 { j 1 { | __| r 1 T 1 1 t 1 | go | .037 | .042| 0.94] 1.07] 4 | 1 } ] { i I 7 t T 1 T q 1 | G | .130 | .260 | 3.30 | 6.60 | 4 | -- t t { | f Lo | .90 | 1.30 | 22.9 | 33.0 | | L L J | 1 1 J NOTES: 4. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3, Dimension B shall be measured at the largest diameter. 4. The G dimension shall include alt uncontrolled areas of the device teads. FIGURE 1. Physical dimensions.MIL SPECS 44E D MM 0000325 0034567 Obe MENILS | HIL-S-19500/411G A e = ha e- hee _ a << i A a / \\ - \ \ Y rs ee ed ~~ 3 CN] GSE [ i 1 | | Dimensions | | I | | Symbol | Inches | Millimeters | | I t t | | | Min | Max | Min | Max I t F t 1 | G | .200 { .225 | 5.08 | 5.72 | [_+__} +} | fF | .019 | .028 | 0.48 | 0.71 | | +--+ + | Ss | .003 | --- | 0.08 | --- | I t t t t | | 0 | .4137 | .148 | 3.48 | 3.76 | t L L i i } NOTES: 4. Dimensions are in inches. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions of surface mount family.MIL SPECS WOE D MM 0000125 0034568 TTS MEMILS MIL-S-19500/411G 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Bldg. 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-S-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and figures 1 and 2 herein. The -US version devices shall be structurally identical to the non surface mount version devices except for lead configuration. 3.3.1 Lead finish. Lead finish shall be in accordance with MIL-STD-750, MIL-S-19500, and herein. 3.3.2 Encapsulant material. In addition to those categories of hermetically sealed package requirements specified in MIL-S-19500, fused-metal-oxide to metal shall also be acceptable. 3.3.3 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with the requirements of category 1 in MIL-S-19500. 3.4 Marking. Marking shall be in accordance with MIL-S-19500. 3.4.1 Marking for US devices. For US version devices only, all marking may be omitted from the body (except for 3.5), but shall be retained on the initial container. 3.5 Polarity. Alternatively, the polarity of all types shall be indicated with a contrasting color band to denote the cathode end. for US suffix devices a minimum of three contrasting color dots spaced around the cathode end of the device shall be used. 3.6 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, part number designators, and test levels shall be as defined in MIL-S-19500.MIL SPECS UE D MM Oo0@1eS 0034569 935 MENMILS MIL-S-19500/411G 3.6.1 Post irradiation performance characteristics. The electrical performance characteristics of the RHA devices are as specified in 4.4.4 herein. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S~19500. 4.2.1 Qualification for radiation hardness assurance. Qualification inspection for radiation hardness assured JANS and JANTXV devices shall consist of group D0 examinations and tests specified in table IV herein. 4.2.2 Group E inspection. Group E inspection shall be conducted in accordance with MIL-S-19500 and table III herein. 4.3. Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. herein; Al 42% 100 percent of initial value or 250 nA de, whichever is greater; AV f1 = 40.1 V de. Scope display evaluation (see 4.5.1. herein; Alp, = 100 percent of initial value or 250 nA dc, whichever is greater; AVen = 20.1 V de. Scope display evaluation (see 4.5.1). : i i i | Screen (see { Measurement { | table II of | | | | _MIL-S-19500) | JANS level I JANTX and JANTXV levels | | { | [ i 3c. O/ The rmal impedance (see iThermal impedance (see | | | 4.5.4) | 4.5.4) | | l | | | 9 i1p4 and Ve4 jNot applicable j I | | { | | | | | 10 |Method 1038, condition A |Method 1038, condition A, | | | | I | 11 1p, and V-4; Alp, = 100 iIp4, and Ve5 | | | percent of initial reading | i | | or 250 mA dc, whichever is | | { | greater; AVp, = #0.1 V de. | | | | | i | { | i I 12 [See 4.3.1 |Method 1038, condition B | | | I 13. 2/ [Subgroup 2 and 3 of table I [Subgroup 2 of table I | | { | | | | | i | | | | | | | | | | | | 1/ Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-S-19500, screen 3 prior to this thermal test. e/ Zogx 18 not required in screen 13, if already previously performed.MIL SPECS uyE D MB OOOOLeS 0034570 657 MMMNILS MIL-S-19500/411G 4.3.1. Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2): | | | | | | Type | V | Ig | f | | pm | | | | | | | 1N5415 | 50 V de | 3 Ade | 50-60 Hz | | 1N5416 | 100 V de | 3 A de | 50-60 Hz | | 1N5417 | 200 V de | 3 A deo | 50-60 Hz | | 1N5418 | 400 V de | 3 A de | 50-60 Hz | 1N5419 | 500 V de | 3 A de | 50-60 Hz | |_1N5420 | 600 v de | 3 A de | 50-60 Hz | NOTE: T, = room ambient as defined in the general requirements of MIL-STD-750, (see 4.5). 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500. 4.4.1. Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table I herein. The following test conditions shail be used for Zgyy: Zgyy = 1.5C/W. ye 5 A minimum. ty Se 10 ms. iy . 1 mA to 10 mA, tip 100 Us maximum. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVa (JANS) and table Ivb (JAN, JANTX, and JANTXV) of MIL-S-19500. Electrical measurements (end-points) shall be in accordance with table 1, group A, subgroup 2 herein; except, Z, y need not to be performed. See subgroup conditions for delta Limits when applicable. 4.4.2.1 Group B inspection, table Iva (JANS) of MIL-S-19500. Subgrou Method Condition 3 ---- Peak reverse power: See figure 5 and (see 4.5.3), Poy = 1,000 (minimum) watts. 3 4066 leu = 80 ACpk); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on Ip = 2 Adc; Veum = rated (see 1.3). Ty = 100C; test each device type sublot. . 4 1036 Ig = 3 Adc; T, = room ambient as defined in the general requirements of MIL-STD-750, (see 4.5); f = 50-60 Hz; V, = rated Veum (see 1.3 and 4.5.2); ton = tort 3 minutes minimum Bor 2,000 cycles. 5 1027 T, = 150 minimum, Ig = 3A (min), or adjust T, or Ip as required to achieve a lot, Ty) = +275C, +0, -35C. Delta Limits: Alp, S 100 percent of initial value or 250 Na dc, whichever is greater.MIL SPECS 4HE D MM 00001225 0034571 593 MEMILS MIL-S-19500/411G 4.4.2.2 Group B inspection, table Ivb (JAN, JANTX and JANTXV of MIL-S-19500. Subgrou Method Condition 2 ---- Peak reverse power: See figure 5 and (see 4.5.4), Pom = 1,000 (minimum) watts. 2 4066 Required on each sublot; Troy = 80 ACpk); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on Ig =2 Adc; V WH = rated Vay (see 7.3). Ty = 100C; test each device type sublot. 3 1027 Ip = 3 A dc; T, = room ambient as defined in the general requirements of MIL-STD-750, (see 4.5); f = 50-60 Hz; Vp = rated Vauy (see 1.3 and 4.5.2). Delta Limits: Alp4 * 100 percent of initial value or 250 Na dc, whichever is greater. 5 ~--- Not applicable. 6 1032 = #475C, t = 340 hours. Ts 4.4.3, Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500. Electrical measurements (end points) shall be in accordance with table I, group A, subgroup 2 herein; except, ZoaJX need not to be performed. See subgroup conditions for delta Limits when applicable. 4.4.3.1 Group C inspection, table V of MIL-S-19500. Subgrou Method Condition 2 2036 Tension: Test condition A; weight = 20 pounds; t = 30 seconds. Lead fatigue: Test condition E; weight 2 pounds. NOTE: Soth tension and lead fatigue are not applicable for US devices. Delta Limits: AV,, = #0.1 V de; Alp, = 100 percent of initial value or 250 nA dc, whichever is greater. 3 so-- Not applicable. 6 1026 Ig = 3 A de; T, = room ambient as defined in the general requirements of MIL-STD-750, (see 4.5); f = 50-60 Hz; Vp = rated VeuM (see 1.3 and 4.5.2). 4.4.4 Group D inspection. Radiation hardness assured JANS and JANTXV devices shall include the group D tests specified in table Il. These tests shall be performed as required in accordance with MIL-S-19500 and MIL-STO-750, method 1019 for total 1onizing dose or method 1017 for neutron for fluence as applicable. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Scope-display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 5 to 20 LA per division and 50 to 100 V per division. Reverse current over the knee shatl be at 50 uA. Each device shall exhibit a sharp knee characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. See MIL-STD-750C, method 4023. 4.5.2 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor less than 150 degrees.MIL. SPECS WHE D MM 0000125 0034572 42aT MMNILS MIL~S-19500/411G 4.5.2.1 Alternate Mounting Conditions. At the option of the manufacturer, any mounting configuration may be utilized providing the following conditions are met: a. 1,(min) = Ig rated at 55C (see 1.3). Vp = rated Veum- f = 50-60 Hz. b. For leaded devices and US devices with temporary leads. T, = room ambient ad defined in MIL-STD-750. For US devices without temporary leads, Te, = +75C minimum. c. Increase Ty, Tee, oF Ig as required to give a minimum Ty of +745C. 4.5.3 Peak reverse power test. This test shall be measured in the circuit of figure 5, or equivalent. A 20 microsecond half-sine waveform of current shall be used and peak reverse power shall be determined by the product of peak reverse voltage and peak reverse current. 4.5.4 Thermal impedance (Z,,, measurements). The Z,,, measurements shall be performed in accordance with MIL-STD-750, method 3101. 4.5.4.1 Thermal impedance (Zg)y measurements) for initial qualification or requalification. The Z@jy measurements shall be performed in accordance with MIL-STD-750, method 3101 (read and record date Z@yjy). Zz shall be supplied on one Lot (500 devices minimum and a thermal response curve shall be submitted). Twenty-two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. 4.5.5 Thermal resistance. Thermal resistance measurement shall be performed in accordance with MIL-STD-750, method 3101 or 4081. Read and record data in accordance with group E herein and shalt be included in the qualification report. Forced moving air or draft shall not be permitted across the devices during test. The maximum Limit for Roy) under these test condition shall be Ra yi mayy = 20C/W for L = .375; ResL(max) = 10c/W for L= 0 CUS version). The following conditions shall apply: ly So ee ee ee 3A. . 2 25 seconds minimum. Ty - 4 mA to 10 mA. tu 70 Es maximum. LS = Lead spacing = 3/8 inch as defined on figure 3 below: COPPER LEAD CLAMP COPPER LEAD CLAMP r UULLN Dalian 375 (9.52) (9.52) INFINITE HEAT-DISSIPATOR FIGURE 3. Mounting arrangement.MIL SPECS 44E D MM 0000125 0034573 346 MEMILS MIL-S-19500/411G TABLE I. Group A inspection. | | . J | i MIL-STD-750 Symbol Limits Unit Inspection 1/ [tection | | [Method Conditions Min Max | | | [ | Subgroup 1 | | | {Visual and mechanical | 2071 | inspection | | | | Subgroup 2 | | | [ |Thermal impedance ] 3101 [See 4.4.1 IZoux | f 1.5 | C/W | | | | | | | | | Forward voltage 4011 I, =1.5 Adc lv 0.5 | 1.2 | Vde | | | if jf | | | |Forward voltage 4011 I, = 9 A de (pulsed); |V [ 0.6 } 1.5 [ Vv (pk) | F F2 | | It, = 300 Us; | | | { |2% maximum duty cycle | j | | | | | [Reverse current | 4016 [DC method; [1,4 | --- [ 1.0 fj paAde | | { [Vp = rated (see 1.3) | | [ [ | | | | | | | | [Breakdown voltage 4021 ir = 50 A de Yar) | | 1N5415 | | 50 _-- V de | 1N5416 | | | | 100 _ V de | 1N5417 | | | | 200 --- V de | 1N5418 [ { { | 400 --- V de | 1N5419 | | | 500 --- V de | 1N5420 | i | | 600 --- V de | | { [ | | Subgroup 3 | { | | | | | | | [High temperature | iT, = +100C | | [ operation: | | I | | | | | | | Reverse current | 4016 {DC method; [Ip | | 20 | pAdc | | i [Vp = rated (see 1.3) | | | | | | | | | | | | | [Low temperature | [T, = -55C | | I | | | operation: : | | | | | Forward-voltage | 4011 {1, = 0.5 Adc IVe3 en) i 1.4 | Vde | | [ | | | | | | | Breakdown voltage 4021 {ir = 50 UA dc [Ycary2 | | | 1N5415 | | | a) | --- | Vde | | 1N5416 | | | | 100 J} --- |ovde | | 1N5417 | | | | 200 } === | Vde | | 1N5418 | | | 400 | --- [| vde | | 1N5419 | | | 500 [| --- | Vvde |{ | _1N5420 L { | | 600 [| _--- | Vde | See footnote at end of table.MIL SPECS WHE D MM 0000325 goayszy eT2 MEMILS MIL-S-19500/411G TABLE I. Group A inspection - Continued. | | MIL-STD-750 Symbol Limits Unit Inspection 1/ | | | Method Conditions Min Max | | Subgroup 4 | | . Reverse recovery 4031 Condition B1 trp time 1N5415 --- 150 ns 1N5416 --- 150 ns 1N5417 --- 150 ns 1N5418 --- 150 ns 1N5419 --- 250 ns 1N5420 --- 400 ns Capacitance 4001 V, = 4 V de; c { aBo khz s f <1 Mhz 1N5415 --- 550 pF 1N5416 --- 430 pF 4N5417 --- 250 pF 1N5418 --- 165 pF 1N5419 --- 140 pF 1N5420 --- 120 pF | Subgroups 5, 6, and 7 Not applicable | | 4/ For sampling plan, see MIL-S-19500. 10MIL SPECS TABLE I1. MIL-S-19500/411G Group D0 inspection and end-point Limits for radiation hardness assured JANS and JANTXV devices only. WHE D MM O000LR25 0034575 1395 MNMILS | Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max | | Subgroup 1 Neutron 1017 irradiation Electrical fp = 9 Adc, pulsed Ve measurements Forward voltage 4011 t., = 300 Us; 22 maximum duty cycle M, D, R, H 1N5415, 1N5416, 0.6 1.6 V(pk) 1N5417, 1N5418, 0.6 1.7 V(pk) 1N5419, 1N5420 0.6 1.8 V(pk) Reverse current, 4016 DC method: Ip M, D, R, H 1N5415 | [Vp = 50 de | { 1.0 | PA de | 1N5416 | | Vp = 100 V de { | {| 1.0 | A de | 4N5417 | | Vp = 200 V de | | | 1.0 | WA de | 1NS418 | [ Vp = 400 V de | | | 1.0 | HA de | IN5419 | | Vp = 500 V de | | {| 1.0 | PA de | 4N5420 Vp = 600 V de 1.0 UA de Subgroup 2 Total dose 1019 | irradiation | | Electrical I, = 9 A de pulsed Ve | measurements | | Forward voltage | 4011 t, = 300 ps; | 22 maximum duty cycle M, 0, R, H 1N5415, 1N5416, 0.6 1.6 V(pk) 1N5417, 1N5418, 0.6 1.7 V(pk) 1N5419, 1N5420 | | 0.6 { 1.8 V(pk) | | | Reverse current | 4016 DC method: | Ip | HM, D, R, H | | | i | | 1N5415 | | Va = 50 V de | | { 1.0 | HA de | 1N5416 | | Vp = 100 V de | | { 1.0 | PA de | 1N5417 | | Vp = 200 V de | | | 1.0 | HA de | 1N5418 | | Vp = 400 V de | | { 1.0 | HA de | 1NS419 | | Vp = 500 Vv de | \ | 1.0 | pAde | 1N5420 | | Vp = 600 V de | | { 1.0 | UA de | { | i { al I s [meee er a eee For sampling plan, ee MIL-S-19500. 11MIL SPECS W4E D MM 0000125 GO3S457b O75 MEMILS MIL-S-19500/411G TABLE LII. Group E inspection (all quality levels) for qualification only. MIL-STD-750 Inspection Sampling plan 1/ | Method Conditions | Subgroup 1 5 Temperature cycling 1051 500 cycles; condition C Electrical measurement See table 1, group A, subgroup 2 Subgroup 2 5 Steady-state de blocking 1038 4,000 hours, condition A. life Electrical measurement | See table I, group A, subgroup 2 { Subgroup 3 Not applicable Subgroup 4 10 devices c=0 Thermal resistance 3101 See 4.5.5 or 4081 Subgroup 5 10 devices c=0 Barometric pressure 1001 Pressure = 8.0 mm 1/ For sampling plans not specified, see MIL-S-19500. 12MIL SPECS HOE D MM 0000325 0034577 TOL MEMILS MIL~S-19500/411G LG 14 i2 Le 10 875 729 5 14 MAXIMUM POWER DISSIPATION IN WATTS Q 25 50 75 100 125 150 175 LEAD TEMPERATURE IN C Maximum lead temperature in C {T)) at point "L" from body (for maximum operating junction temperature with equal two-lead conditions). | d L Roy | | Inches { C/W | [-__++ | .000.00) | 4 | | .125 (3.18) | 9 | | .250 (6.35) | 14 | | .375 (9.53) | 20 | | .500 (12.70)] 24 | [bf | .750 (19.05)] 34 | bd NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 4. Maximum power in watts vs lead temperature. 13MIL SPECS WHE D MM O0002e5 00354578 948 MENILS MIL-S-19500/411G R | 2N4200 q tL 02 D1 390 vo- c PULSE A _ GEN 4 ot b- D3 eo (-Y 20:1 FERRITE ONE TURN PICK UP LOOP NOTES: L = 13T H22 on 1" diameter form (air core). C ~ 1 to 10 pfd to give 20 Us pulse width. V - Adjustable to 200 volts for power desired in DUT. D1 - 3 kV; 600 Ma (1N3647 or equivalent). d2, D3 - 600 V; 3A (1N5552 or equivalent). * Values not stated are determined at the time of test. -e| 20s be TYPICAL WAVEFORMS FIGURE 5. Peak reverse power measurement circuit and waveform.MIL SPECS YUE D MM 0000325 0034579 4&4 MBMILS MIL-S~19500/411G 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish as specified (see 3.3.1). c. Product assurance level and type designation. 6.3 Replacement data. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER Army - ER Navy - EC Air Force - 17 Agent: NASA - NA DLA - ES Review activities: (Project 5961-1570) Army ~ AR, AV, MI, SM Navy - AS, CG, MC Air Force - 19, 80, 85, 99 DLA - ES 45