ALPHA IND/ SEMICONDUCTOR HW8E D MM 0585443 0001341 648 MMALP T9721 Hyperabrupt Varactor Diode Features: Outline Drawing j_120_y) ~ M VHF to UHF Operation >| 08 max. nee Linear Octave Tuning from 3 to 20 volts #179 le 4 Shown m Surface Mountable SOT-23 Package 3-7 Outline 4 L - Single diode (SMV1200-04A) pee - Two diodes back to back foot T (SMV1200-04B) 2 m High Reliability Ll | a Types: er y teh m@ SMV1200-04 A,B LV A DIG A mex * =. max. maxX. max Absolute Maximum Ratings (Ta = 25 C) Reverse Voltage Vr 20V CAPACITANCE VS. VOLTAGE Forward Current If 100mA 30 Power Dissipation Pd 250mW A tobe Junction Temperature Tj 125C 2s B: }-> 2 Storage Temperature Tstg -55 to 150C 1 3 = 1s Oo 104 fo $4 ~ 2 4 6 BS 10 12 14 16 18 20 Bias(v) Electrical Characteristics (Ta = 25 C) Test Specifications Parameter Symbol]! Condition | Min | Typ | Max | Unit Breakdown Voltage Vb Ir = 10pA 22.0 25.0 - Vv Reverse Leakage Current | Ir Vr = 20V - | <2.0 | 50.0 | nA Diode Capacitance Ct1 Vr =3V 10.5 - | 12.5 | pF Diode Capacitance Ct2 Vr=20V 2.2 - 2.6 | pF Capacitance Ratio Cr Ct1/Ct2 46 - - - Figure of Merit Q Vr=3V, 400 600 - - f=50MHz Capacitance Variation C Vr=3V - 5 -| % Specifications subject to change without notice. 4-43