AMMC-5026
2–35 GHz GaAs MMIC Traveling Wave Amplier
Data Sheet
Description
The AMMC-5026 is a broadband PHEMT GaAs MMIC
Traveling Wave Amplier (TWA) designed for medium
output power and high gain over the full 2 GHz to 35 GHz
frequency range. The design employs a 6-section cascode
connected FET structure to provide at gain and medium
power as well as uniform group delay. For improved reli-
ability and moisture protection, the die is passivated at
the active areas.
Applications
• Broadband gain block
• Broadband driver amplier
• 10 Gb/s Fiber Optics
Features
• Frequency range: 2– 35 GHz
• Gain: 10.5 dB
• Gain atness: ±0.8 dB
•
Return loss:
Input 17 dB, Output: 15 dB
• Output power (P-1dB):
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
• Noise gure (6–19 GHz): ≤ 4 dB
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions Units Min. Max.
Vdd Positive Drain Voltage V 10
Idd Total Drain Current mA 450
Vg1 First Gate Voltage V -5
Ig1 First Gate Current mA -9 +5
Vg2 Second Gate Voltage V -3 +3.5
Ig2 Second Gate Current mA -10
Pin CW Input Power dBm 23
Tch Channel Temperature °C +150
Tb Operating Backside Temperature °C -55
Tstg Storage Temperature °C -65 +165
Tmax Max. Assembly Temp (60 sec max) °C +300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device.
Chip Size: 3050 x 840 µm (119 x 33 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 75 x 75 µm (2.9 ± 0.4 mils)
2
AMMC-5026 DC Specications/Physical Properties[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Idss Saturated Drain Current mA 250 350 450
(Vdd=7 V, Vg1=0 V, Vg2=open circuit)
Vp1 First Gate Pinch-o Voltage V -1.2
(Vdd=7 V, Idd=0.1 Idss, Vg2=open circuit)
Vg2 Second Gate Self-bias Voltage V 3.5
(Vdd=7 V, Idd=150 mA, Vg2=open circuit)
Idso First Gate Pinch-o Current mA 75
(Vg1) (Vdd=7 V, Vg1=3.5 V, Vg2=open circuit)
θch-b Thermal Resistance[2] °C/W 28
(Backside temperature, Tb = 25°C)
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
RF Specications[3,4]
(Vdd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50Ω)
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21|2 Small-signal Gain dB 8.5 10.5 12.5
∆|S21|2 Small-signal Gain Flatness dB ±0.75 ±1.5
RLin Input Return Loss dB 13 17
RLout Output Return Loss dB 12 15
|S12|2 Isolation dB 23 26
P-1dB Output Power @ 1 dB Gain Compression f = 10 GHz dBm 22 24
Psat Saturated Output Power f = 10 GHz dBm 26
OIP3 Output 3rd Order Intercept Point, dBm 31
RFin1 = RFin2 = - 20 dBm, f = 10 GHz, ∆f = 2 MHz
NF Noise Figure f = 10 GHz dB 3.6
f = 20 GHz dB 4.3
H2 Second Harmonic (Pin = 12 dBm at 10 GHz) dBc -20 -17.5
H3 Third Harmonic (Pin = 12 dBm at 10 GHz) dBc -30 -28
Notes:
1. Data measured in wafer form, Tchuck = 25°C.
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
3
AMMC-5026 Typical Performance
(Tchuck = 25°C, Vdd = 7V, Idd = 150 mA, Vg2 = Open, Z0 = 50Ω)
Figure 1. Gain.
FREQUENCY (GHz)
GAIN (dB)
0 405 10 15 20 25 30 35
0 405 10 15 20 25 30 35
0 405 10 15 20 25 30 35
15
10
5
0
-5
-10
-15
Figure 2. Input and Output Return Loss.
FREQUENCY (GHz)
RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-30
0 405 10 15 20 25 30 35
28
25
22
19
16
13
10
S11(dB)
S22(dB)
Figure 3. Output Power at P
1dB
and P
3dB
.
FREQUENCY (GHz)
P1dB
,
P3dB (dBm)
P
1dB
P
3dB
Figure 4. Group Delay.
FREQUENCY (GHz)
t
g
(pS)
0 405 10 15 20 25 30 35
160
120
80
40
0
Figure 5. Noise Figure.
FREQUENCY (GHz)
NOISE FIGURE (dB)
0 405 10 15 20 25 30 35
8
7
6
5
4
3
2
Figure 6. Output 3
rd
Order Intercept Point.
FREQUENCY (GHz)
IP3 (dBm)
40
30
20
10
0
-10
4
AMMC-5026 Typical Performance
(Tchuck = 25°C, Vdd = 8V, Idd = 150 mA, Vg2 = Open, Z0 = 50Ω)
Figure 7. Gain.
FREQUENCY (GHz)
GAIN (dB)
15
10
5
0
-5
-10
-15
Figure 8. Input and Output Return Loss.
FREQUENCY (GHz)
RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-30
S11(dB)
S22(dB)
Figure 9. Output Power at P
1dB
and P
3dB
.
Figure 10. Group Delay.
FREQUENCY (GHz)
t
g
(pS)
100
80
60
40
20
0
Figure 11. Noise Figure.
FREQUENCY (GHz)
NOISE FIGURE (dB)
8
7
6
5
4
3
2
Figure 12. Output 3
rd
Order Intercept Point.
FREQUENCY (GHz)
OIP3 (dBm)
40
30
20
10
0
-10
Figure 13. Gain vs. Temperature.
FREQUENCY (GHz)
S21 (dB)
15
10
5
0
-5 0 405 10 15 20 25 30 35
S21(dB) 25°C
S21(dB) -40°C
S21(dB) 80°C
Figure 14. Noise Figure vs. Temperature.
FREQUENCY (GHz)
NF (dB)
10
8
6
4
2
00 405 10 15 20 25 30 35
NF @ 25°C
NF @ -40°C
NF @ 85°C
0 405 10 15 20 25 30 35
28
25
22
19
16
13
10
FREQUENCY (GHz)
P1dB
,
P3dB (dBm)
0 405 10 15 20 25 30 35 0 405 10 15 20 25 30 35
0 405 10 15 20 25 30 350 405 10 15 20 25 30 35
0 405 10 15 20 25 30 35
P
1dB
P
3dB
5
AMMC-5026 Typical Scattering Parameters[1]
(Tchuck = 25°C, Vdd = 7V, Idd = 150 mA)
Freq. S11 S21 S12 S22
GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang
2.0 -24.93 0.06 -56 9.89 3.12 130 -52.04 0.0025 -109 -17.16 0.14 -126
3.0 -26.84 0.05 -18 9.50 2.98 112 -48.40 0.0038 -131 -15.78 0.16 -154
4.0 -25.16 0.06 -2 9.14 2.87 94 -45.19 0.0055 -154 -14.87 0.18 179
5.0 -23.72 0.07 2 8.90 2.79 77 -43.10 0.0070 -174 -14.55 0.19 154
6.0 -22.99 0.07 2 8.81 2.76 60 -41.31 0.0086 164 -14.82 0.18 128
7.0 -22.58 0.07 1 8.87 2.78 42 -40.00 0.0100 143 -15.68 0.16 101
8.0 -21.97 0.08 1 9.04 2.83 24 -38.94 0.0113 122 -17.22 0.14 73
9.0 -21.29 0.09 -3 9.24 2.90 5 -38.13 0.0124 103 -19.41 0.11 39
10.0 -20.67 0.09 -7 9.42 2.96 -15 -37.33 0.0136 84 -21.84 0.08 -6
11.0 -20.29 0.10 -16 9.53 2.99 -35 -36.65 0.0147 66 -22.43 0.08 -62
12.0 -20.47 0.09 -29 9.56 3.01 -56 -36.03 0.0158 49 -20.48 0.09 -110
13.0 -21.49 0.08 -43 9.52 2.99 -76 -35.34 0.0171 32 -18.32 0.12 -145
14.0 -23.65 0.07 -59 9.46 2.97 -97 -34.61 0.0186 14 -16.78 0.14 -172
15.0 -28.02 0.04 -81 9.40 2.95 -117 -33.89 0.0202 -3 -15.83 0.16 165
16.0 -39.49 0.01 -131 9.36 2.94 -137 -32.96 0.0225 -22 -15.57 0.17 144
17.0 -31.18 0.03 86 9.41 2.95 -157 -32.22 0.0245 -41 -15.93 0.16 125
18.0 -24.21 0.06 60 9.52 2.99 -177 -31.57 0.0264 -62 -16.86 0.14 107
19.0 -20.93 0.09 38 9.68 3.05 162 -30.96 0.0283 -82 -18.63 0.12 91
20.0 -18.20 0.12 13 9.79 3.09 141 -30.60 0.0295 -104 -21.67 0.08 78
21.0 -17.48 0.13 -17 9.94 3.14 119 -30.17 0.0310 -125 -27.56 0.04 74
22.0 -17.43 0.13 -46 10.02 3.17 96 -29.90 0.0320 -147 -32.88 0.02 142
23.0 -17.77 0.13 -81 10.07 3.19 73 -29.74 0.0326 -168 -24.55 0.06 171
24.0 -18.27 0.12 -119 10.06 3.18 50 -29.50 0.0335 171 -19.79 0.10 163
25.0 -18.66 0.12 -161 10.04 3.18 27 -29.24 0.0345 150 -17.19 0.14 150
26.0 -18.56 0.12 156 10.08 3.19 4 -28.85 0.0361 129 -15.72 0.16 135
27.0 -18.60 0.12 112 10.20 3.24 -19 -28.34 0.0383 107 -15.10 0.18 119
28.0 -19.07 0.11 66 10.46 3.33 -44 -27.70 0.0412 83 -15.28 0.17 104
29.0 -19.79 0.10 9 10.75 3.45 -70 -27.23 0.0435 57 -16.61 0.15 89
30.0 -18.63 0.12 -59 10.99 3.54 -98 -26.80 0.0457 29 -19.73 0.10 80
31.0 -15.62 0.17 -116 11.07 3.58 -127 -26.67 0.0464 0 -24.26 0.06 102
32.0 -13.40 0.21 -161 10.93 3.52 -158 -26.82 0.0456 -29 -21.06 0.09 136
33.0 -12.69 0.23 161 10.79 3.46 171 -26.97 0.0448 -58 -17.40 0.13 133
34.0 -14.73 0.18 127 10.78 3.46 139 -26.96 0.0449 -89 -15.99 0.16 118
35.0 -26.00 0.05 120 10.83 3.48 102 -26.76 0.0459 -125 -17.25 0.14 107
36.0 -14.82 0.18 -157 10.24 3.25 58 -27.23 0.0435 -169 -18.78 0.12 120
37.0 -10.01 0.32 172 8.79 2.75 12 -28.38 0.0381 146 -16.58 0.15 125
38.0 -9.81 0.32 161 6.12 2.02 -42 -30.66 0.0293 91 -18.73 0.12 125
39.0 -6.40 0.48 157 -0.65 0.93 -90 -36.71 0.0146 44 -13.68 0.21 154
40.0 -4.23 0.61 135 -7.76 0.41 -109 -42.85 0.0072 18 -10.52 0.30 139
Note:
1. Data obtained from on-wafer measurements.
6
AMMC-5026 Typical Scattering Parameters[1]
(Tchuck = 25°C, Vdd = 8V, Idd = 150 mA)
Freq. S11 S21 S12 S22
GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang
2.0 -24.88 0.06 -57 9.59 3.02 129 -51.70 0.0026 -109 -17.27 0.14 -123
3.0 -26.86 0.05 -19 9.20 2.88 112 -47.74 0.0041 -131 -15.97 0.16 -152
4.0 -25.30 0.05 -2 8.85 2.77 94 -45.04 0.0056 -153 -15.10 0.18 -179
5.0 -23.94 0.06 2 8.59 2.69 76 -42.85 0.0072 -175 -14.79 0.18 155
6.0 -23.17 0.07 2 8.49 2.66 59 -41.11 0.0088 164 -15.05 0.18 129
7.0 -22.72 0.07 1 8.54 2.67 41 -39.74 0.0103 144 -15.89 0.16 102
8.0 -22.09 0.08 1 8.70 2.72 23 -38.56 0.0118 123 -17.37 0.14 72
9.0 -21.42 0.08 -3 8.89 2.78 4 -37.72 0.0130 104 -19.46 0.11 38
10.0 -20.79 0.09 -7 9.07 2.84 -16 -37.02 0.0141 85 -21.68 0.08 -7
11.0 -20.42 0.10 -17 9.17 2.87 -37 -36.31 0.0153 67 -22.16 0.08 -61
12.0 -20.68 0.09 -30 9.20 2.88 -58 -35.60 0.0166 49 -20.38 0.10 -108
13.0 -21.76 0.08 -44 9.15 2.87 -78 -34.94 0.0179 32 -18.33 0.12 -143
14.0 -24.04 0.06 -61 9.08 2.84 -99 -34.20 0.0195 14 -16.84 0.14 -171
15.0 -28.68 0.04 -83 9.01 2.82 -119 -33.47 0.0212 -3 -15.91 0.16 166
16.0 -40.72 0.01 -151 8.97 2.81 -139 -32.62 0.0234 -21 -15.67 0.16 145
17.0 -30.52 0.03 86 9.00 2.82 -159 -31.87 0.0255 -41 -16.02 0.16 125
18.0 -24.07 0.06 58 9.11 2.85 -180 -31.28 0.0273 -61 -16.95 0.14 107
19.0 -21.00 0.09 36 9.26 2.90 159 -30.66 0.0293 -81 -18.70 0.12 91
20.0 -18.37 0.12 12 9.35 2.93 137 -30.26 0.0307 -103 -21.76 0.08 77
21.0 -17.78 0.13 -18 9.49 2.98 115 -29.87 0.0321 -124 -27.81 0.04 69
22.0 -17.89 0.13 -49 9.57 3.01 93 -29.53 0.0334 -146 -34.56 0.02 146
23.0 -18.34 0.12 -84 9.60 3.02 70 -29.42 0.0338 -168 -24.90 0.06 175
24.0 -18.89 0.11 -123 9.57 3.01 46 -29.17 0.0348 172 -19.97 0.10 165
25.0 -19.20 0.11 -166 9.53 3.00 23 -28.95 0.0357 151 -17.32 0.14 151
26.0 -19.05 0.11 151 9.55 3.00 0 -28.57 0.0373 130 -15.83 0.16 136
27.0 -19.12 0.11 108 9.65 3.04 -24 -28.09 0.0394 108 -15.23 0.17 120
28.0 -19.87 0.10 62 9.88 3.12 -49 -27.47 0.0423 84 -15.44 0.17 105
29.0 -20.78 0.09 3 10.14 3.21 -75 -27.05 0.0444 58 -16.82 0.14 90
30.0 -19.42 0.11 -67 10.33 3.29 -103 -26.69 0.0463 30 -20.01 0.10 81
31.0 -16.18 0.16 -123 10.37 3.30 -133 -26.60 0.0468 1 -24.45 0.06 103
32.0 -13.92 0.20 -166 10.21 3.24 -164 -26.76 0.0459 -28 -21.24 0.09 136
33.0 -13.31 0.22 158 10.03 3.17 165 -26.92 0.0451 -57 -17.71 0.13 133
34.0 -15.52 0.17 129 9.95 3.14 132 -26.97 0.0448 -88 -16.44 0.15 119
35.0 -23.72 0.07 144 9.82 3.10 95 -27.01 0.0446 -124 -17.71 0.13 111
36.0 -14.68 0.18 -169 9.06 2.84 52 -27.64 0.0415 -167 -18.68 0.12 123
37.0 -10.47 0.30 166 7.43 2.35 6 -29.02 0.0354 148 -16.97 0.14 127
38.0 -9.72 0.33 159 4.27 1.64 -46 -31.77 0.0258 96 -18.00 0.13 136
39.0 -6.77 0.46 152 -2.02 0.79 -88 -37.46 0.0134 53 -13.26 0.22 151
40.0 -4.70 0.58 133 -8.14 0.39 -108 -42.97 0.0071 28 -10.51 0.30 138
Note:
1. Data obtained from on-wafer measurements.
7
Biasing and Operation
AMMC-5026 is biased with a single positive drain supply
(Vd) and a negative gate supply (Vg1). The recommended
bias conditions for the AMMC-5026 is Vdd = 7V and Idd =
150 mA for best overall performance. Open circuit is the
default setting for the Vg2 biasing.
Figure 17 shows a typical bonding conguration for the 2
to 35 GHz operations. In this case, auxiliary drain and Vg1
capacitors (>0.5 µF) are used for low frequency (below
2 GHz) performance. Input and output RF ports are DC
coupled; therefore, DC decoupling capacitors are required
if there are DC paths.
The auxiliary gate and drain contacts are used for low
frequency performance extension below 1 GHz. When
used, these contacts must be AC coupled only. (Do not
attempt to apply bias to these pads.)
Ground connections are made with plated through-holes
to the backside of the device.
Figure 15. AMMC-5026 Schematic.
Assembly Techniques
The backside of the MMIC chip is RF ground. For microstrip
applications the chip should be attached directly to
the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1,2]. For conductive epoxy,
the amount should be just enough to provide a thin l-
let around the bottom perimeter of the die. The ground
plane should be free of any residue that may jeopardize
electrical or mechanical attachment. Caution should be
taken to not exceed the Absolute Maximum Rating for
assembly temperature and time.
Thermosonic wedge bonding is the preferred method for
wire attachment to the bond pads. The RF connections
should be kept as short as possible to minimize inductance.
Gold mesh or double-bonding with 0.7 mil gold wire is
recommended.
Mesh can be attached using a 2 mil round tracking tool
and a tool force of approximately 22 grams with an ul-
trasonic power of roughly 55 dB for a duration of 76 ± 8
mS. A guided wedge at an ultrasonic power level of 64
dB can be used for the 0.7 mil wire. The recommended
wire bond stage temperature is 150 ± 2°C.
The chip is 100 mm thick and should be handled with
care.
This MMIC has exposed air bridges on the top surface.
Handle at edges or with a custom collet (do not pick up
die with vacuum on die center.)
This MMIC is also static sensitive and ESD handling precau-
tions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
Vd
Aux Vd
RF Output
Aux Vg2
Aux V
g
1
RF Input
V
g
1
Figure 16. AMMC-5026 Bonding Pad Locations. (dimensions in micrometers)
Figure 17. AMMC-5026 Assembly Diagram.
Ordering Information
AMMC-5026-W10 = 10 devices per tray
AMMC-5026-W50 = 50 devices per tray
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-3929EN
AV02-1286EN - July 8, 2008
Vd
Vg
OUT
AMMC-5026
IN
1.5 mil dia.Gold Wire Bond
to 15 nF DC Feedthru
4 nH Inductor
(1.0 mil Gold Wire Bond
with length of 200 mils)
0.7 mil dia. Gold Bond Wire
(Length Not important)
Gold Plated Shim
68 pF Capacitor
Input and Output Thin Film
Circuit with 8 pF
DC Blocking Capacitor
2.0 mil
nom. gap
2.0 mil
nom. gap
1.5 mil dia.Gold Wire Bond
to 15 nF DC Feedthru
Bonding Island
750
505
252
840
(±10 µm)
318
(Aux Vg2)
587
2323
(Vg1)
89 (RF Input Pad) 2563
(Aux Vg1)
2951
2964
(RF Output Pad)
89
3050 (± 10 µm)
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75 µm
(Vd)
(Aux Vd)