MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A B E F G U H J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K L M 3-M5 Nuts O P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N O TAB#110 t=0.5 P S R T E2 G2 C2E1 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 80.00.25 Dimensions M Inches Millimeters 0.47 12.0 N 0.53 13.5 O 0.1 2.5 B 3.150.01 C 1.89 48.0 D 0.94 24.0 P 0.63 16.0 E 0.28 7.0 Q 0.98 25.0 F 0.67 17.0 R G 0.91 23.0 S 1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 K 0.71 18.0 V 0.51 13.0 L 0.16 4.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-24H is a 1200V (VCES), 100 Ampere Dual IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 100 24 Sep.2000 MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Junction Temperature Symbol Ratings Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tc = 25C, Tj 150C) Pc 650 Watts Mounting Torque, M5 Main Terminal - 2.5~3.5 N*m Mounting Torque, M6 Mounting - 3.5~4.5 N*m - 310 Grams Viso 2500 Vrms Storage Temperature Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V - - 0.5 A 4.5 6 7.5 Volts - 2.9 3.7 Volts - Volts - nC Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25C IC = 100A, VGE = 15V, Tj = 125C - Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V - 375 Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V - - 3.2 Min. Typ. Max. - - 2.85 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V Units 15 nF - - 5 nF - - 3 nF VCC = 600V, IC = 100A, - - 100 ns VGE1 = VGE2 = 15V, - - 200 ns td(off) RG = 3.1, Resistive - - 300 ns tf Load Switching Operation - - 350 ns Diode Reverse Recovery Time** trr IE = 100A, diE/dt = -200A/s - - 300 ns Diode Reverse Recovery Charge** Qrr IE = 100A, diE/dt = -200A/s - 0.55 - C **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module - - 0.19 C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module - - 0.35 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.035 - C/W Contact Thermal Resistance Test Conditions Min. Typ. Max. Units Sep.2000 MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 200 15 12 VGE = 20V 160 20 11 120 10 80 9 40 8 0 2 4 6 8 120 80 40 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 4 IC = 40A 12 16 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) tf td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 200 2.0 2.5 3.0 3.5 Cies Coes 100 Cres 10-1 10-1 4.0 100 di/dt = -200A/sec Tj = 25C trr 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 102 GATE CHARGE, VGE 102 102 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 100 100 1.5 103 td(off) 160 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 120 VGE = 0V 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 80 CAPACITANCE VS. VCE (TYPICAL) 102 101 1.0 0 40 COLLECTOR-CURRENT, IC, (AMPERES) REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2 101 1 0 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) IC = 200A IC = 100A VCC = 600V VGE = 15V RG = 3.1 Tj = 125C 2 Tj = 25C 8 103 3 102 Tj = 25C 4 4 20 103 0 VGE = 15V Tj = 25C Tj = 125C 0 0 10 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 160 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM100DU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.19C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000