TA8211AH
2002-02-13
1
TOSHIB A Bipolar Lin ear Integrated Circuit Silicon Mono lithic
TA8211AH
Dual Audio Power Amplifier
The TA8211AH is dual audio power amplifier for consumer
applications.
This IC provides an output power of 6 watts per channel
(at VCC = 20 V, f = 1 kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of TV and home stereo.
Features
· High output power: Pout = 6 W/channel (Typ.)
(VCC = 20 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
· Low noise: Vno = 0.14 mVrms (Typ.)
(VCC = 28 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ,
BW = 20 Hz~20 kHz)
· Very few external parts
· Built in thermal shut down protector circuit
· Operating supply voltage range: VCC (opr) = 10~30 V (Ta = 25°C)
Block Diagram
Weight: 4.04 g (typ.)
6 9
Ripple Filter VCC
VCC
4 IN1
INPUT1 7
RL
8
20 kW
3
11 12
10
RL
2 IN2
AMP1
AMP2
OUT1
OUT2
PW-GNDPre-GND
INPUT2
5 400 W
1 20 kW400 W
TA8211AH
2002-02-13
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Application Information
Voltage gain
The closed loop voltage gain is determined by R1, R2.
~
- 34 (dB)
(a) Amplifier with gain > 34dB
When R3 = 400 W
GV ~
- 40 (dB)
is given.
(b) Amplifier with gain < 34dB
When R4 = 220 W
GV ~
- 30 (dB)
is given.
Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.
W
W+W
= 400
400k 20
og20l
(dB)
R
RR
og20G
2
21
V
+
=l
(dB)
//RR
//RRR
og20G
32
321
V
+
=l
(dB)
RR
RRR
og20G
42
421
V+
++
=l
4/2
R1
20 kW
R2
400 W
5/1 7/12 Output
Input
Figure 1
8/11
4/2
R1
20 kW
R2
400 W
5/1 7/12 Output
Input
Figure 2
8/11
4/2
R1
20 kW
R2
400 W
5/1 7/12 Output
Input
Figure 3
8/11
R4
TA8211AH
2002-02-13
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Standard PCB
(Bottom vi ew)
TA8211AH
2002-02-13
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Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Supply volt age VCC 30 V
Output current (Peak/ch) IO (peak) 2 A
Power dissipation PD (Note) 25 W
Operating temperature Topr -20~75 °C
Storage temperature Tstg -55~150 °C
Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(unless otherwise specified, VCC =
==
= 20 V, RL =
==
= 600 9
99
9, Rg =
==
= 600 9
99
9, f =
==
= 1 kHz, Ta =
==
= 25° C)
Characteristics Symbol
Test
Circuit Tes t Condition Min Typ. Max Unit
Quiescent current ICCQ ¾ V
in = 0 ¾ 75 130 mA
Pout (1) ¾ THD = 10% 5.0 6.0 ¾
Output power Pout (2) ¾ THD = 1% ¾ 4.5 ¾ W
Total harmonic dist ort i on THD ¾ P
out = 2 W ¾ 0.1 0.6 %
Closed loop voltage gain GV ¾ V
out = 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB
Open loop voltage gain GVO ¾ ¾ 60 ¾ dB
Input resist ance RIN ¾ ¾ ¾ 30 ¾ kW
Ripple rejection ratio R.R. ¾ Rg = 0, fripple = 100 Hz
Vripple = 0.775 V rms (0dBm) -45 -57 ¾ dB
Output noise voltage V no ¾ Rg = 10 kW,
BW = 20 Hz~20 kHz ¾ 0.14 0.3 mVrms
Typ. DC Voltage of Each Terminal (VCC =
==
= 20 V, Ta =
==
= 25°C)
Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12
DC voltage (V) 2.1 2.25 GND 2.25 2.1 6.8 9.8 2.25 VCC GND 2.25 9.8
TA8211AH
2002-02-13
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Test Circuit
6 9
Ripple Filter
VCC
100 mF
1000 mF
4 IN1
INPUT1 7
RL
8
20 kW
3
11 12
10
RL
2 IN2
AMP1
AMP2
OUT1
OUT2
PW-GNDPre-GND
INPUT2
5 400 W
1 20 kW400 W
1.0 mF
1.0 mF
47 mF 47 mF
2.2 W 2.2 W
0.12 mF 0.12 mF
1000 mF
1000 mF
TA8211AH
2002-02-13
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0.03
0.05
0.02
0.1
0.5
30
0.1 0.3
1
3
1 10 30
0.3
5
10
3
VCC = 20 V
RL = 8 W
Ta = 25°C
f = 10 kHz
100 Hz
1 kHz
Vin = 0
Ta = 25°C
0
40
ICCQ
0
80
120
160
8 16 24 32 40
8
0
16
24
32
VOUT (DC)
(V7, V12)
Total harmonic distortion THD (%)
Total harmonic distortion THD (%)
Output DC voltage VOUT (DC) (V)
Supply voltage VCC (V)
ICCQ, VOUT (DC) – VCC
Quiescent current ICCQ (mA)
Frequency f (Hz)
GV – f
Voltage gain GV (dB)
Output power Pout (W)
THD – Pout
Total harmonic distortion THD (%)
Output power Pout (W)
THD – Pout
Frequency f (Hz)
THD – f
Frequency f (Hz)
C.T. – f
Cross talk C.T. (dB)
30
0.02
100 300 1k 10k 100k3k 30k
0.1
0.5
3VCC = 20 V
RL = 8 W
Pout = 2 W
Ta = 25°C
0.05
0.3
1
5
30 100 300 1k 10k 100k3k 30k
VCC = 20 V
RL = 8 W
Rg = 620 W
Vout = 0.775Vrms
(0dBm)
Ta = 25°C
-80
-70
-60
-50
-40
-30
-20
-10
VCC = 20 V
RL = 8 W
Vout = 0.775 Vrms
(0dBm)
30
10
0
20
30
60
100 300 1k
40
50
3k 10k 30k 100k
80
70
90
0.3
0.05
0.02
0.1
0.5
30
1 3
1
3
10 100 300
0.3
5
10
30
VCC = 12 V 20 28
f = 1 kHz
RL = 8 W
Ta = 25°C
TA8211AH
2002-02-13
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VCC = 20 V
RL = 8 W
fripple = 100Hz
Vripple = 0.775 Vrms
(0dBm)
Ta = 25°C
30
-80
-90
-70
-60
-30
100 300 1k
-50
-40
3k 10k 30k 100k
-10
-20
0
-40
0.04
0
0.08
0.12
-20 0
0.16
VCC = 20 V
RL = 8 W
Rg = 10 kW
BW = 20 Hz~20 kHz
20 40 60 80 -40
40
0
80
120
-20 0
160 VCC = 20 V
Vin = 0
20 40 60 80
VCC = 20 V
f = 1 kHz
RL = 8 W
Vout = 0.775 Vrms
(0dBm)
Ta = 25°C
30
-90
-100
-80
-70
-40
100 300 1k
-60
-50
3k 10k 30k 100k
-20
-30
-10 VCC = 20 V
RL = 8 W
Rg = 620 W
Vripple = 0.775 Vrms
(0dBm)
30
-90
-80
-70
-40
100 300 1k
-60
-50
3k 10k 30k
-20
-30
-10
Output nois e voltage Vno (mVrms)
Output nois e voltage Vno (mVrms)
Signal source resistance Rg (W)
C.T. – Rg
Cross talk C.T. (dB)
Frequency f (Hz)
R.R. – f
Ripple rejection ratio R.R. (dB)
Signal source resistance Rg (W)
R.R. – Rg
Ripple rejection ratio R.R. (dB)
Signal source resistance Rg (W)
Vno – Rg
Ambient temperature Ta (°C)
Vno – Ta
Ambient temperature Ta (°C)
ICCQ – Ta
Quiescent current ICCQ (mA)
VCC = 20 V
RL = 8 W
BW = 20 Hz~20 kHz
Ta = 25°C
30
0.04
0
0.08
0.12
0.24
100 300 1k
0.16
0.20
3k 10k 30k 100k
0.32
0.28
0.36
TA8211AH
2002-02-13
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0
0
10
25
25
50 100 17575
1
5
15
20
30
125 150
1: Infinite heat sink
2: 4.1°C/W heat sink
3: 9.5°C/W heat sink
2
3
0
4
0
8
12
4
16 RL = 8 W
f = 1 kHz
Ta = 25°C
8 12 16 20
VCC = 28 V
20
24
18
10
4
0
8
12
14
16 RL = 8 W
f = 1 kHz
Ta = 25°C
18 22 26 30
-40
0.05
0.02
0.1
0.3
-20 0
0.5 VCC = 20 V
RL = 8 W
f = 1 kHz
Pout = 2 W
20 40 60 80 0
4
0
8
12
8
16 RL = 8 W
f = 1 kHz
THD = 10%
16 24 32 40
Allowable power dissipation PD (W)
Power dissipation PD (W)
Ambient temperature Ta (ºC)
THD – Ta
Total harmonic distoration THD (%)
Supply voltage VCC (V)
Pout – VCC
Output pow er Pout (W)
Supply voltage VCC (V)
PD MAX – VCC
Maximum power dissipation PD MAX (W)
Output power Pout (W)
PD – Pout
Ambient temperature Ta (°C)
PD – Ta
TA8211AH
2002-02-13
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Package Dimensions
Weight: 4.04 g (typ.)
TA8211AH
2002-02-13
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. .
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer’s own risk.
· This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
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· The information contained herein is subject to change without notice.
000707EBF
RESTRICTIONS O N PRODUCT USE
