VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 1Document Number: 96393
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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High Performance Schottky Rectifier, 10 A
FEATURES
• 150 °C TJ operation
• TO-220 and D2PAK packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 10 A
VR35 V, 45 V
VF at IF0.57 V
IRM 15 mA at 125 °C
TJ max. 150 °C
EAS 8 mJ
Package D2PAK (TO-263AB)
Circuit configuration Single
Anode
13
Base
cathode
2
N/C
D2PAK (TO-263AB)
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 10 A
IFRM TC = 135 °C 20
VRRM 35/45 V
IFSM tp = 5 μs sine 1060 A
VF10 Apk, TJ = 125 °C 0.57 V
TJRange -65 to +150 C°
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1035-M3 VS-MBRB1045-M3 UNITS
Maximum DC reverse voltage VR35 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 135 °C, rated VR10
A
Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20
Non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz 150
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 2Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
20 A TJ = 25 °C 0.84
V10 A TJ = 125 °C 0.57
20 A 0.72
Maximum instantaneous reverse
current IRM (1) TJ = 25 °C Rated DC voltage 0.1 mA
TJ = 125 °C 15
Threshold voltage VF(TO) TJ = TJ maximum 0.354 V
Forward slope resistance rt17.6 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25
°C 600 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ -65 to 150 °C
Maximum storage temperature range TStg -65 to 175
Maximum thermal resistance,
junction to case RthJC DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased
(Only for TO-220) 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB) MBRB1035
MBRB1045
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 3Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
0.4 0.6 1.0 1.4 1.8
0.8 1.2 1.6
0.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.0001
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 40 45
25 30 35
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40 50
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 4Document Number: 96393
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
120
130
140
125
135
150
145
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
63912
15
0
DC
See note (1)
Square wave (D = 0.50)
Rated VR applied
0
6
8
4
2
10
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
2134 8567
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 5Document Number: 96393
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBRB1035-M3 50 1000 Antistatic plastic tubes
VS-MBRB1035TRR-M3 800 800 13" diameter reel
VS-MBRB1035TRL-M3 800 800 13" diameter reel
VS-MBRB1045-M3 50 1000 Antistatic plastic tubes
VS-MBRB1045TRR-M3 800 800 13" diameter reel
VS-MBRB1045TRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?95293
2- Essential part number
3- B = surface mount
4- Current rating (10 = 10 A)
5-
7
Voltage ratings
6-
35 = 35 V
45 = 45 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
1
Device code
51 32 4 6 7
VS- MBR B 10 45 TRL -M3
- Vishay Semiconductors product
- -M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 13-Jul-17 1Document Number: 96164
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC® outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
(3)
(3)
View A - A
(E)
(D1)
E1
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Revision: 01-Jan-2021 1Document Number: 91000
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