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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQB50N06 / FQI50N06 N-Channel QFET(R) MOSFET 60 V, 50 A, 22 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * 50 A , 60 V, RDS(on) = 22 m (Max.) @VGS = 10 V, ID = 25 A * Low Gate Charge (Typ. 31 nC) * Low Crss (Typ. 65 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating D D G G S G DS D2-PAK I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB50N06TM / FQI50N06TU 60 Unit V - Continuous (TC = 100C) 50 A 35.4 A 200 A IDM Drain Current VGSS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 12 7.0 3.75 mJ V/ns W 120 0.8 -55 to +175 W W/C C 300 C dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25C) TJ, TSTG TL - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA FQB50N06TM FQI50N06TU Parameter Thermal Resistance, Junction to Case, Max. 1.24 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max. (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 1 Unit o C/W 40 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET October 2013 Device Marking FQB50N06 Device FQB50N06TM Package D2-PAK Reel Size Tape Width Quantity 330mm 24mm FQI50N06 FQI50N06TU I2-PAK - - 800 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.06 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 A VDS = 48 V, TC = 150C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A -- 0.018 0.022 gFS Forward Transconductance VDS = 25 V, ID = 25 A -- 22 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1180 1540 pF -- 440 580 pF -- 65 90 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 25 A, RG = 25 (Note 4) VDS = 48 V, ID = 50 A, VGS = 10 V (Note 4) -- 15 40 ns -- 105 220 ns -- 60 130 ns -- 65 140 ns -- 31 41 nC -- 8 -- nC -- 13 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM -- -- 200 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 50 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 52 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 50 A, dIF / dt = 100 A/s -- 75 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230H, IAS = 50A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 50A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 2 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 1 10 175 25 Notes : 1. 250 s Pulse Test 2. TC = 25 0 Notes : 1. VDS = 30V 2. 250 s Pulse Test -55 10 0 -1 0 10 10 1 10 10 2 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.05 2 VGS = 10V 0.03 IDR, Reverse Drain Current [A] R DS(ON) [ ], Drain-Source On-Resistance 10 0.04 VGS = 20V 1 10 0.02 0.01 Note : TJ = 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 175 0.00 0 50 100 150 200 0 10 ID, Drain Current [A] 0.2 1.0 1.2 1.4 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 V GS , Gate-Source Voltage [V] Capacitance [pF] 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2500 2000 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 0.4 Coss Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 1000 Crss 500 VDS = 30V VDS = 48V 8 6 4 2 Note : ID = 50A 0 0 -1 10 0 0 10 10 15 20 25 30 35 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 5 1 10 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 0.5 150 Notes : 1. VGS = 10 V 2. ID = 25 A 0.0 -100 200 -50 10 150 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3 200 60 50 100 s 2 ID , Drain Current [A] ID , Drain Current [A] 100 TJ, Junction Temperature [ C] 1 ms 10 ms DC 10 50 TJ, Junction Temperature [ C] Operation in This Area is Limited by R DS(on) 10 0 o o 1 Notes : o 40 30 20 10 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 10 -1 10 10 0 1 10 10 0 25 2 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 10 75 100 125 150 175 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N otes : 1 . Z J C( t ) = 1 . 2 4 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 4 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Typical Characteristics FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 6 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 7 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET Mechanical Dimensions TO-262 3L (I2PAK) Figure 17. 3LD, TO262, Jedec Variation AA (12PAK) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 Dimension in Millimeters (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 9 www.fairchildsemi.com FQB50N06 / FQI50N06 -- N-Channel QFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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