QSD2030F - ON SEMICONDUCTOR

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QSD2030F — Plastic Silicon Photodiode

QSD2030F Rev. 1.3 1

August 2016

QSD2030F

Plastic Silicon Photodiode

Features

• PIN Photodiode

• Package Type: T-1 3/4 (5 mm Lens Diameter)

• Wide Reception Angle: 40°

• Daylight Filter

• Package Material and Color: Black Epoxy

• High Sensitivity

• Peak Sensitivity λ= 880 nm

• Radiant Sensitive Area: 1.245 mm x 1.245 mm

Ordering Information

Part Number Operating Temperature Package Packing Method

QSD2030F -40 to +100°C T-1 3/4 Bulk

CATHODE

ANODE

Schematic

QSD2030F — Plastic Silicon Photodiode

QSD2030F Rev. 1.3 2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise specified.

Notes:

1. RMA flux is recommended.

2. Methanol or isopropyl alcohols are recommended as cleaning agents.

3. Soldering iron tip 1/16 inch (1.6 mm) minimum from housing.

4. Derate power dissipation linearly 1.33 mW/°C above 25°C.

Electrical / Optical Characteristics

Values are at TA = 25°C unless specified otherwise.

Symbol Parameter Min. Unit

TOPR Operating Temperature -40 to +100

°C

TSTG Storage Temperature -40 to + 100

TSOL-I Soldering Temperature (Iron)(1,2,3) 240 for 5 s

TSOL-F Soldering Temperature (Flow)(1,2) 260 for 10 s

VBR Reverse Breakdown Voltage 50 V

PDPower Dissipation(4) 100 mW

Symbol Parameter Test Conditions Min. Typ. Max. Units

PS Peak Sensitivity Wavelength 880 nm

SR Wavelength Sensitivity Range 700 1100 nm

Reception Angle ±20 o

VFForward Voltage IF = 80 mA 1.3 V

IDReverse Dark Current VR = 10 V, Ee = 0 10 nA

ILReverse Light Current Ee = 0.5 mW/cm2,

VR = 5 V, = 950 nm 15 25 A

VOOpen Circuit Voltage Ee = 0.5 mW/cm2,

= 880 nm 420 mV

TCVTemperature Coefficient of VO+0.6 mV/K

ISC Short Circuit Current Ee = 0.5 mW/cm2,

= 880 nm 50 A

TCITemperature Coefficient of ISC +0.3 %/K

C Capacitance VR = 0, f = 1 MHz, Ee = 0 15 pF

trRise Time VR = 5 V, RL = 50 ,

= 950 nm

5ns

tfFall Time 5

QSD2030F — Plastic Silicon Photodiode

QSD2030F Rev. 1.3 3

Typical Performance Characteristics

Figure 1. Reverse Light Current vs. Emitter Output

Power Figure 2. Angular Response

Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Reverse Voltage

0 5 10 15 20 25 30 35 40 45 50

CJ- JUNCTION CAPACITANCE (pF)

VR- REVERSE BIAS VOLTAGE (V)

f=1MHz

QSD2030F — Plastic Silicon Photodiode

QSD2030F Rev. 1.3 4

Physical Dimensions

Figure 5. T-1 3/4, 5 MM LED (ACTIVE)

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without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or

obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild produ cts.

Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :

http://www.fairchildsemi.com/packaging/.

For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-DBD111A-LOCZ.pdf.

Notes:

1.Dimensions for all drawings are in inches (mm).

2.Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.

0.195 (4.95)

0.040 (1.02)

NOM

0.100 (2.54)

NOM

0.050 (1.25)

0.800 (20.3)

MIN

0.305 (7.75)

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)

SQ. (2X)

REFERENCE

SURFACE

CATHODE

T-1 3/4

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Rev. I77

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

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